C5825
Abstract: No abstract text available
Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5825
200mV
2SA2072.
SC-63)
OT-428>
C5825
R1120A
C5825
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C5825
Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and
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2SC5825
200mV
2SA2073
SC-63)
OT-428>
C5825
C5825
2SC5825
transistor C5825
2SA2073
Transistor 2sa2073
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2SA20
Abstract: MP6Z3
Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.
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200mV
200mA)
2SC5824-die
2SA2071-die
2SA20
MP6Z3
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2SA2071
Abstract: 2SC5824 T100
Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5824
200mV
200mA)
2SA2071.
R1120A
2SA2071
2SC5824
T100
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C5825
Abstract: 2SC5825 2SA2073
Text: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5825
200mV
2SA2073
SC-63)
OT-428>
C5825
R0039A
C5825
2SC5825
2SA2073
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Untitled
Abstract: No abstract text available
Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5824
200mV
200mA)
2SA2071.
R1120A
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2SA2071
Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5824
200mV
200mA)
2SA2071.
2SA2071
2SC5824
T100
60V transistor npn 2a switching applications
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c5826
Abstract: 2SA2073 2SC5826
Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and
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2SC5826
200mV
2SA2073
C5826
c5826
2SA2073
2SC5826
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c5826
Abstract: No abstract text available
Text: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5826
200mV
2SA2073
C5826
R1120A
c5826
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Untitled
Abstract: No abstract text available
Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.
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200mV
200mA)
2SC5824-die
2SA2071-die
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C5825
Abstract: No abstract text available
Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5825
200mV
2SA2072.
SC-63)
OT-428>
C5825
R1010A
C5825
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2SD880Y
Abstract: VCEO-60V 2SD880-Y 2SD880
Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage
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2SD880Y
O-220
2SD880Y
VCEO-60V
2SD880-Y
2SD880
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2SC5824
Abstract: No abstract text available
Text: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.
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2SC5824
200mV
200mA)
2SA2071.
R1120A
2SC5824
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mosfet pch 3a 60v
Abstract: JESD97 STS4C3F60L
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
mosfet pch 3a 60v
JESD97
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JESD97
Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
JESD97
s4c3f60l
mosfet pch 3a 60v
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NPN Transistor 8A
Abstract: TIP100 TIP105
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A
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TIP105
NPN Transistor 8A
TIP100
TIP105
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C5103
Abstract: transistor C5103 C5103 Transistor
Text: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)
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2SC5103
SC-63)
OT-428>
2SA1952
C5103
R1102A
C5103
transistor C5103
C5103 Transistor
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Untitled
Abstract: No abstract text available
Text: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)
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200mV
200mA)
2SC5824-dies
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catalog transistor
Abstract: 2SC5824
Text: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)
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200mV
200mA)
2SC5824-dies
catalog transistor
2SC5824
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2sa1952
Abstract: No abstract text available
Text: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)
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2SA1952
SC-63)
OT-428>
2SC5103
A1952
R1102A
2sa1952
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c5826
Abstract: 2SA2073 2SC5826
Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)
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2SC5826
65Max.
200mV
2SA2073
C5826
c5826
2SA2073
2SC5826
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c5826
Abstract: 2SC5826 2SA2073 2SA20
Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)
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2SC5826
65Max.
200mV
2SA2073
C5826
c5826
2SC5826
2SA2073
2SA20
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2SB1274
Abstract: 2SD1913 82055 D2000 transistor
Text: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0
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ENN2246B
2SB1274/2SD1913
2SB1274/2SD1913]
2SB1274
O-220ML
2SB1274
2SD1913
82055
D2000 transistor
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Untitled
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of
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STN3NF06
OT-223
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