Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

5962-86705

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

Contextual Info: INTEGRATE] D E V I C E 3ÔE D • 4 Ô 2 5 7 7 1 OQGfilbl =1 ■ CMOS STATIC RAM 16K 4Kx 4-BIT) IDT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.)

1DT6168SA

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

DSC1121

Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

2Y202

Abstract: dt6168 1N12J
Contextual Info: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m ­

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)

IDT6168LA

Contextual Info: CMOS STATIC RAM 16K 4KX 4-BIT IDT 6 I 68 SA IDT6¿68LA FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-bit h ig h -s p e e d sta tic RAM organized as 4K x 4. It Is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-rellability te c h n o lo g y — C EM O S . T h is state-of-the-art te c h n o lo g y , c o m ­

d1994

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed {equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

29S5

Contextual Info: IN T E GR AT ED DEVI CE SflE D CMOS STATIC RAM 16K 4Kx 4-BIT 4Ö 25 771 001 154 0 247 IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 1 2 /15/2 0/25 /35/45/5 5/70 /85/100ns (max.)

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA 1DT6168LA Integrated Device Technology, Inc. nology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 10ns are available. The circuit also

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage