rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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62308B
Abstract: 62308BF
Text: SILICO N M O N O L IT H IC BIPO LA R D IG IT A L IN T EG RA T ED CIRCUIT 62308BP-1/BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARLINGTON SINK DRIVER T h e T D 6 2 3 0 8 8 P -1 a n d T D 6 2 3 0 8 B F a r e n o n - in v e r t in g t r a n s is to r a r r a y w h ic h a r e c o m p r is e d o f f o u r N P N
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TD62308BP-1/BF
62308B
62308BF
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62308BP
Abstract: No abstract text available
Text: AK 62308B Series 1048576-W ord x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION A K N 6 2 3 0 8 B P /B F Series is a 8 -M b it C M O S m ask-program able R O M organized as 1048576-w ord x 8-bits. It can be operated with a battery because of low power consumption.
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N62308B
048576-W
1048576-w
62308B
62308BP
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AKN62308BF
Abstract: AKN62308BP
Text: 62308B Series 1048576-W ord 8-Bit CMOS Mask Program m able ROM x PIN CONFIGURATION A K N 6 2 3 0 8 B P /B F S e rie s is a 8 -M b it C M O S m a s k -p ro g ra m a b le R O M o rg anized as 1 0 4 8 5 7 6 -w o rd x 8-bits. It can be o p erated with a battery b ec a u s e of low pow er consum ption.
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AKN62308B
1048576-Word
AKN62308BP/BF
100mW
AKN62308BP
32-pin
AKN62308BF
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HN62308B
Abstract: 62308BP
Text: 62308B Series 1048576 x 8-Bit CMOS MASK Programmable Read Only Memory • DESCRIPTION The 62308B is a 8-Mbit CMOS mask-programmable ROM organized as 1048576-words x 8-bits. Realizing low power con sumption, this memory is allowed for battery operation. In addition,
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HN62308B
1048576-words
HN62308B,
62308B
200ns
62308BP
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TA8101N
Abstract: 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P
Text: 3. APPLICATIONS 3-1 Applications List E lectronic equipm ents contains th eir ow n m ain and auxiliary drives; th eir m o to r types and drive circuits are selected in accordance w ith th e necessary properties for such parts. The following are application circuits considered m ost com m on, listed fo r devices.
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TA8401/AP,
TA7272P
TA8407P
8407F
TA8102P
8212F
8212F
TA8410P/AP
TA8410P
TA8101N
8428K
TA8101
76494P
7291P
62803P
tc9201f
7288P
7262-F
8407P
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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