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    63 MARKING CODE DIODE Search Results

    63 MARKING CODE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    63 MARKING CODE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A1267

    Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
    Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration


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    3-04W 3-05W VSO05561 3-06W Q62702-A1261 OT-323 Q62702-A1267 transistor A1267 A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561 PDF

    BAR63

    Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
    Text: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036


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    OT-23 Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 BAR63 BAR63-04 BAR63 Q62702-A1038 a1038 transistor BR diode A1038 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039 PDF

    450KW

    Abstract: No abstract text available
    Text: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values


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    Q62702-A1004 OT-143 450KW PDF

    zero bias diode

    Abstract: diode ring mixer a1105 Q62702-A1105 BAT17-04 BAT17-04W BAT17W sot143 marking code 2c
    Text: BAT 63-099R Silicon Schottky Diodes • Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking Ordering Code BAT 63-099RSN Q62702-A1105 Pin Configuration Package 1=A SOT-143 2=C Maximum Ratings Parameter Symbol


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    63-099R 63-099RSN Q62702-A1105 OT-143 BAT17W BAT17-04. BAT17-04W. Feb-01-1996 zero bias diode diode ring mixer a1105 Q62702-A1105 BAT17-04 BAT17-04W BAT17W sot143 marking code 2c PDF

    transistor marking codes a01

    Abstract: Q62702-A1025 marking code js sod323 diode PIN diode for high speed switching of RF signals marking code js 3 pin diode
    Text: BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration Package 1 2


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    3-03W OD-323 Q62702-A1025 transistor marking codes a01 Q62702-A1025 marking code js sod323 diode PIN diode for high speed switching of RF signals marking code js 3 pin diode PDF

    Q62702-A1211

    Abstract: No abstract text available
    Text: BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching 2 of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance 1 • For frequencies up to 3 GHz VES05991 Type Marking Ordering Code Pin Configuration


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    3-02W VES05991 SCD-80 Q62702-A1211 Sep-07-1998 100MHz Q62702-A1211 PDF

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


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    Si5404BDC Si5404BDC-T1--E3 08-Apr-05 PDF

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


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    Si5404BDC Si5404BDC-T1--E3 18-Jul-08 PDF

    Si5404BDC-T1-E3

    Abstract: SI5404BDC
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


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    Si5404BDC Si5404BDC-T1--E3 S-41826--Rev. 11-Oct-04 Si5404BDC-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4


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    Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63-04 fi235fci05 EHD07139 fl23SbOS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4


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    Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63 BAR63-04 fl235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel


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    Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63 BAR63 BAR63-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration


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    3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol


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    Q62702-A1004 OT-143 E35bGS 01503St> W111M PDF

    ZERO Bias diode

    Abstract: 04W06 bat17
    Text: SIEMENS BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking BAT 63-099F3SN Ordering Code Pin Configuration Package Q62702-A1105 1= A SO T-143 2=C Maximum Ratings Parameter


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    63-099R Q62702-A1105 T-143 63-099F3SN BAT17W BAT17-04. BAT17-04W. ZERO Bias diode 04W06 bat17 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz Type Marking Ordering Code Pin Configuration BAR 63-02W


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    3-02W 2702-A SCD-80 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63-03W Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration


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    3-03W Q62702-A1025 OD-323 EHD07139 a53Sfc 23SbOS PDF

    siemens diode

    Abstract: No abstract text available
    Text: SIEMENS BAR 63-03W Silicon PIN Diode • • • • PIN diode for high speed switching of R F signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration Package V


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    3-03W Q62702-A1025 OD-323 3-03W EHD07159 siemens diode PDF

    D1980

    Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated


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    2SD1980F5 SC-63) D1980 2SD1980 K35kQ R2se300Q 2SD1980F5 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 damper diode darlington npn transistor t f5 j PDF

    D1980

    Abstract: diode marking F5
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated


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    2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5 PDF

    B1316

    Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
    Text: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •


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    2SB1316F5 SC-63) B1316 2SB1316F5 DIODE B1316 B-1316 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking PDF

    b1316

    Abstract: B131-6
    Text: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated


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    2SB1316F5 SC-63) B1316 2SB1316F5 2SB1316F5, B131-6 PDF

    DIODE S3V 63

    Abstract: No abstract text available
    Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band


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    24MIN S3V60Z DIODE S3V 63 PDF

    DIODE S3V

    Abstract: DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7
    Text: r c r — K A x ia l D lo d * Sinote DfecUp ^MytäsOB Avatanche ty « ^ O U T L IN E DIM ENSIONS Cathode Anode S3VDZ 04 .8 M A X 600V 3.5A Color code, Cathode band Blue : S3V60Z Marking 7'<7'svi.& zm S3V 63 ¡.fe Type No. • f-X x Avalanche type (Silver


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    S3V60Z S3V60Z 400Hz 000ST5Ô DIODE S3V DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7 PDF