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    Vishay Siliconix SI5404BDC-T1-E3

    MOSFET N-CH 20V 5.4A 1206-8
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    SI5404BDC-T1-E3 Cut Tape 1
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    RS SI5404BDC-T1-E3 Bulk 3,000
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    Vishay Siliconix SI5404BDC-T1-GE3

    MOSFET N-CH 20V 5.4A 1206-8
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    SI5404BDC Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5404BDC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si5404BDC Vishay Siliconix Specification Comparison Original PDF
    Si5404BDC Vishay Telefunken Specification Comparison Original PDF
    SI5404BDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.4A 1206-8 Original PDF
    SI5404BDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.4A 1206-8 Original PDF

    SI5404BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    73127

    Abstract: Si5404BDC
    Text: SPICE Device Model Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5404BDC 08-Sep-04 73127

    54AIS

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 11-Mar-11 54AIS

    9540 mosfet

    Abstract: AN609 Si5404BDC
    Text: Si5404BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5404BDC AN609 26-Sep-07 9540 mosfet

    Si5404BDC-T1-E3

    Abstract: SI5404BDC
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		PDF Si5404BDC Si5404BDC-T1--E3 S-41826--Rev. 11-Oct-04 Si5404BDC-T1-E3

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		PDF Si5404BDC Si5404BDC-T1--E3 08-Apr-05

    Si5404DC-T1-E3

    Abstract: Si5404BDC Si5404BDC-T1-E3 Si5404DC Si5404DC-T1
    Text: Specification Comparison Vishay Siliconix Si5404BDC vs. Si5404DC Description: N-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5404BDC-T1 Replaces Si5404DC-T1 Si5404BDC-T1-E3 (Lead (Pb)-free version) Replaces Si5404DC-T1-E3


    Original     		PDF Si5404BDC Si5404DC Si5404BDC-T1 Si5404DC-T1 Si5404BDC-T1-E3 Si5404DC-T1-E3 09-Nov-06

    Si5404BDC

    Abstract: No abstract text available
    Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		PDF Si5404BDC Si5404BDC-T1--E3 18-Jul-08

    Si5404BDC

    Abstract: Si5404BDC-T1-E3
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 18-Jul-08

    Si5404DC-T1-E3

    Abstract: 1206-8 Si5404BDC Si5404BDC-T1-E3 Si5404DC Si5404DC-T1
    Text: Specification Comparison Vishay Siliconix Si5404BDC vs. Si5404DC Description: N-Channel, 2.5-V G-S MOSFET Package: 1206-8 ChipFETr Pin Out: Identical Part Number Replacements: Si5404BDC-T1 Replaces Si5404DC-T1 Si5404BDC-T1—E3 (Lead (Pb)-Free version) Replaces Si5404DC-T1—E3


    Original     		PDF Si5404BDC Si5404DC Si5404BDC-T1 Si5404DC-T1 Si5404BDC-T1--E3 Si5404DC-T1--E3 Si5404DC-T1-E3 1206-8 Si5404BDC-T1-E3

    SI5404BDC-T1-GE3

    Abstract: Si5404BDC Si5404BDC-T1-E3
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5404BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5404BDC 18-Jul-08

    54AIS

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 54AIS

    73127

    Abstract: Si5404BDC
    Text: SPICE Device Model Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5404BDC S-60147Rev. 13-Feb-06 73127

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: Low Voltage DC-DC Switching Power Reference Design Preliminary Technical Data FCDC 00105b FEATURES A high density and cost-effective solution for low voltage DC-DC power conversion Input Voltage Range: 10.8 V – 13.2 V Output Voltage: 2.5 V Output Current: 4 A


    Original     		PDF 00105b ADP1828 ADP1828

    Untitled

    Abstract: No abstract text available
    Text: ADP1829 FCDC 00089 Preliminary Technical Data FEATURES Two Output Voltages: 5.0 V, 3.3 V Output Current: 3 A Input voltage: 8.0-16.0 V Ripple 2% ppk of Output Voltage Transient step ±5%, 50% max load ADP1829 DESCRIPTION This ADP1829 reference design uses 8.0 V to 16.0 V for the input voltage. The output voltages and currents are as follows:


    Original     		PDF ADP1829 ADP1829

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: ADP1829 FCDC 00105a Preliminary Technical Data FEATURES Two Output Voltages: 5.0 V, 3.3 V Output Current: 1.5 A, 2.6 A Input voltage: 10.8 V-13.2 V Ripple 12 mV ppk Transient step ±5%, 50% max load ADP1829 DESCRIPTION This ADP1829 reference design uses 10.8 V to 13.2 V for the input voltage. The output voltages and currents are as follows:


    Original     		PDF ADP1829 00105a ADP1829

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04

    AN819

    Abstract: SI4686 Si4800BDY Si4336DY Si4686DY Si4894BDY Si5404BDC Si7112DN Si7336ADP Si7806ADN
    Text: VISHAY SILICONIX Power MOSFETs Application Note 834 Estimating Junction Temperature by Top Surface Temperature in Power MOSFETs By Satoru Sawahata Abstract The thermal data provided on MOSFET datasheets is usually limited to thermal impedance between junction-to-lead and junction-to-ambient. While Vishay


    Original     		PDF AN819, 29-Feb-08 AN819 SI4686 Si4800BDY Si4336DY Si4686DY Si4894BDY Si5404BDC Si7112DN Si7336ADP Si7806ADN