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    RG2006

    Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
    Text: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		RG2006JN ENA1784 PW100s, cycle50% A1784-3/3 RG2006 RG2006n RG2006JN to220ml ENA1784 A1784 PDF

    RG2006

    Abstract: RG2006n RG2006JN A1784 TO-220ML VRRM600V
    Text: RG2006JN 注文コード No. N A 1 7 8 4 三洋半導体データシート N RG2006JN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・VRRM=600V ・trr=16ns typ. ・逆回復時のノイズが小さい 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		RG2006JN O-220ML SC-67, OT186A RG2006 63010SA IT13677 IT14499 RG2006 RG2006n RG2006JN A1784 TO-220ML VRRM600V PDF