631AA-01
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME
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OT-723
631AA-01
631AA
631AA-01
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B DATE 15 MAR 2004 SCALE 8:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
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OT-723
631AA-01
631AA
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Untitled
Abstract: No abstract text available
Text: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount
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MMBT2222AM3T5G
OT-23
OT-723
631AA
MMBT2222AM3/D
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Untitled
Abstract: No abstract text available
Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2211,
MMUN2211L,
MUN5211,
DTC114EE,
DTC114EM3,
NSBC114EF3
DTC114E/D
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Untitled
Abstract: No abstract text available
Text: MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors BRT R1 = 47 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2237,
MMUN2237L,
MUN5237,
DTC144WE,
DTC144WM3,
NSBC144WF3
DTC144W/D
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Untitled
Abstract: No abstract text available
Text: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board
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OT-723
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NSR30CM3T5G
Abstract: No abstract text available
Text: NSR30CM3T5G Preferred Device Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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NSR30CM3T5G
NSR30CM3T5G/D
NSR30CM3T5G
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NTK4401NT1
Abstract: NTK4401NT1G 30367 SOT-723
Text: NTK4401N Product Preview Small Signal MOSFET 20 V, Single N−Channel, SOT−723 Gate ESD Protection http://onsemi.com Features • • • • Low Gate Charge for Fast Switching Small Footprint 1.2 x 1.2 mm ESD Protected Gate Pb−Free Package for Green Manufacturing (G Suffix)
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NTK4401N
OT-723
NTK4401N/D
NTK4401NT1
NTK4401NT1G
30367
SOT-723
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Untitled
Abstract: No abstract text available
Text: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board
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NTK3134NT1G
Abstract: NTK3134N NTK3134NT5G SC89 mosfet marking kf
Text: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3134N
OT-723
NTK3134N/D
NTK3134NT1G
NTK3134N
NTK3134NT5G
SC89
mosfet marking kf
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Untitled
Abstract: No abstract text available
Text: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount
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MMBT2222AM3T5G
MMBT2222AM3T5G
MMBT2222AM3/D
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Untitled
Abstract: No abstract text available
Text: NSR30CM3T5G Preferred Device Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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NSR30CM3T5G
NSR30CM3T5G/D
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Untitled
Abstract: No abstract text available
Text: 2SC5658K3T5G Product Preview NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board
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2SC5658K3T5G
OT-723
7-inch/3000
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SMMUN2211LT3G
Abstract: DTC114EM3 SOT323 A8A DTC114EET1G
Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2211,
MMUN2211L,
MUN5211,
DTC114EE,
DTC114EM3,
NSBC114EF3
DTC114E/D
SMMUN2211LT3G
DTC114EM3
SOT323 A8A
DTC114EET1G
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BAT54M3T5G
Abstract: 419C-02 MMVL3700T1
Text: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40
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1SS383T1
SC-82AB
419C-02
BAT54CXV3T5
SC-89
463C-03
RB751S40T1
BAT54XV2T1
RB520S30T1
RB521S30T1
BAT54M3T5G
419C-02
MMVL3700T1
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DAN222M3T5G
Abstract: m1n9
Text: DAN222M3T5G Product Preview Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low
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DAN222M3T5G
OT-723
DAN222M3/D
DAN222M3T5G
m1n9
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MARKING 6N
Abstract: No abstract text available
Text: MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors BRT R1 = 100 kW, R2 = 100 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN2136,
MMUN2136L,
MUN5136,
DTA115EE,
DTA115EM3
DTA115E/D
MARKING 6N
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MUN5130
Abstract: No abstract text available
Text: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2130,
MMUN2130L,
MUN5130,
DTA113EE,
DTA113EM3,
NSBA113EF3
DTA113E/D
MUN5130
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marking 8F
Abstract: marking A8F NSBC143TF3 8F sot23
Text: MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2216,
MMUN2216L,
MUN5216,
DTC143TE,
DTC143TM3,
NSBC143TF3
DTC143T/D
marking 8F
marking A8F
8F sot23
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Untitled
Abstract: No abstract text available
Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2111,
MMUN2111L,
MUN5111,
DTA114EE,
DTA114EM3,
NSBA114EF3
DTA114E/D
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Untitled
Abstract: No abstract text available
Text: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board
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OT-723
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esd7l5.0dt5g
Abstract: working OF IC 723
Text: ESD7L5.0DT5G Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD7L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping
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OT-723
esd7l5.0dt5g
working OF IC 723
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IC 723 pin out diagram
Abstract: BC856BM3T5G
Text: BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device
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BC856BM3T5G
OT-723
BC856BM3/D
IC 723 pin out diagram
BC856BM3T5G
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631AA-01
Abstract: No abstract text available
Text: ESD7L5.0DT5G Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD7L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping
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OT-723
631AA-01
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