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    64 X 1 DRAM CONTROLLER Search Results

    64 X 1 DRAM CONTROLLER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    64 X 1 DRAM CONTROLLER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1, 2 MEG x 64 DRAM SODIMMs TECHNOLOGY, INC. MT4LDT164H X (S) MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM (DF-7) 1 Meg x 64 (shown), (DF-8) 2 Meg x 64 • JEDEC- and industry-standard pinout in a 144-pin,


    Original     		144-pin, 024-cycle 048-cycle 128ms MT4LDT164H 144-PIN PDF

    FPM DRAM

    Abstract: FPM-510
    Text: OBSOLETE 1, 2 MEG x 64 DRAM SODIMMs MT4LDT164H X (S), MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC pinout in a 144-pin, small-outline, dual in-line


    Original     		MT4LDT164H MT8LDT264H 144-pin, 024-cycle 048-cycle 144-PIN FPM DRAM FPM-510 PDF

    Untitled

    Abstract: No abstract text available
    Text: HWD52L1664 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES OVERVIEW • Clock frequency: 166, 133, 100 MHz DRAM HWD52L1664 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed


    Original     		HWD52L1664 64-MBIT) HWD52L1664 16-bit 54-Pin I/O15 B-906, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1, 2 MEG X 64 DRAM SODIMMs MICRON I TECHNOLOGY, INC. MT4LDT164H X (S) MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM (DF-7) 1 Meg x 64 (shown), (DF-8) 2 Meg x 64 • JED EC - and industry-standard pinout in a 144-pin,


    OCR Scan     		MT4LDT164H MT8LDT264H 144-Pin 144-pin, 024-cycle 048-cycle PDF

    tc 97101

    Abstract: No abstract text available
    Text: ADVANCE |V |C = R O N 1 MEG DRAM MODULE X MT16LD T 164(S) 64 DRAM MODULE 1 MEG x 64 DRAM FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V +0.3V power supply


    OCR Scan     		MT16LD 168-pin, 024-cycle 128ms DE-24) DE-25) tc 97101 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON •- MT16D T 164(S) 1 MEG X 64 DRAM MODULE SEWCOHOUCTOR IMC. DRAM MODULE 1 MEG x 64 DRAM 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • In d u stry -stan d ard 168-pin, d u a l read-out, d u a l in-line m em ory m odule (DIMM) • H igh-perform ance CMOS silicon-gate process


    OCR Scan     		MT16D 168-pin, 600mW 024-cycle 128ms 168-PiSernconducior. PDF

    WT16LD

    Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
    Text: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		T16LD 168-pin, 024-cycle 128ms 048-cycle MT16LD WT16LD tc 97101 INTERNAL DIAGRAM OF IC 7476 PDF

    SMT160

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		MT16D 168-pin, 600mW 024-cycle 128ms SMT160 PDF

    168PIN DIMM 32MB 5V

    Abstract: No abstract text available
    Text: ADVANCE |V |IC R O N MT16D T 164(S), MT16D(T)464 MEG. 4 MEG x 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		MT16D 168-pin, 024-cycle 128ms 048-cycle 168PIN DIMM 32MB 5V PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N I ii^ n w r w MT16LD T 164(S) ! MEG x 64 DRAM MODULE 1 MEG x 64 DRAM 3.3V, OPTIONAL EXTENDED REFRESH, SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • H igh-perform ance CMOS silicon-gate process


    OCR Scan     		MT16LD 168-pin, 200mW 024-cycle 128ms PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE MICRON I 1, 2 MEG x 64 DRAM SODIMMs TECHNOLOGY, INC. MT4LDT164H X (S), MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)


    OCR Scan     		144-pin, 024-cycle 048-cycle 128ms MT4LDT164H 144-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON I 1, 2 MEG x 64 DRAM SODIMMs TECHNOLOGY, INC. MT4LDT164H X (S), MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)


    OCR Scan     		MT4LDT164H MT8LDT264H 144-pin, 024-cycle 048-cycle distrib60 144-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M M Q N MT16LD T 164(S), MT16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM MODULES I DRAM |y | 0 Q 18, 32MEG’ 4 MEG x 64 MEGABYTE, 3.3V, OPTIONAL SELF L £ REFF^ESH, FAST PAGE OR EDO PAGE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		MT16LD 168-Pin 168-pin, 024-cycle PDF

    Untitled

    Abstract: No abstract text available
    Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE


    OCR Scan     		MT48LC16M4A1 MT48LC8M8A1/A2 MT48LC4M16A1/A2 096-cycle, 54-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64 MEG: x4, x8, x16 SDRAM p i i c n o N MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1 /A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PC 100-compliant functionality • Fully synchronous; all signals registered on positive


    OCR Scan     		MT48LC16M4A1 MT48LC8M8A1/A2 MT48LC4M16A1 100-compliant PDF

    Untitled

    Abstract: No abstract text available
    Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks M T48LC8M 8A1/A2 - 2 Meg x 8 x 4 banks M T48LC4M 16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron


    OCR Scan     		MT48LC16M4A1 T48LC8M T48LC4M 16A1/A2 54-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64 MEG: x4, x8, x16 SDRAM p i i c n o N MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC 8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1 /A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES PIN ASSIGNMENT Top View • PC 100-compliant functionality • Fully synchronous; all signals registered on positive


    OCR Scan     		MT48LC16M4A1 MT48LC MT48LC4M16A1 100-compliant PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60


    OCR Scan     		1Mx64 75H3412 SA14-4619-01 IBM11M1645B PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 4 6 4 0 C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 4Mx64 Fast Page Mode DIMM • Performance: 60 -70 ÎRAC


    OCR Scan     		4Mx64 110ns 130ns 03H7156 MMDL05DSU-00 IBM11M4640C PDF

    0116160

    Abstract: No abstract text available
    Text: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1 M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		IBM0116160 IBM0116160M IBM0116160B IBM0116160P SA14-4207-06 0116160 PDF

    T3D 64

    Abstract: No abstract text available
    Text: IB M 1 1 M 2 6 4 5 H IB M 1 1 M 2 6 4 5 H B 2M x 64 DRAM MODULE »HiMln»! . Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: -Buffered inputs except RAS, Data • 2Mx64 Extended Data Out Page Mode DIMM


    OCR Scan     		2Mx64 124ns IBM11M2645H IBM11M2645HB 50H4197 SA14-4614-02 T3D 64 PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 4 6 4 5 C IB M 1 1 M 4 6 4 5 C B 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: - • 4Mx64 Extended Data Out Page Mode DIMM


    OCR Scan     		4Mx64 104ns 124ns IBM11M4645C IBM11M4645CB 50H4198 PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 2 6 4 0 H IB M 1 1 M 2 6 4 0 H B 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM - • Performance:


    OCR Scan     		2Mx64 130ns 110ns PDF

    Untitled

    Abstract: No abstract text available
    Text: I B M 1 1M 1 6 4 5 L 1M X 64 DRAM MODULE Preliminary System Performance Benefits: Features -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc Pins) -4 Byte Interleave enabled -Byte write, byte read accesses -Buffered PDs • 168 Pin JEDEC Standard, 8 Byte Dual In-line


    OCR Scan     		1Mx64 104ns 124ns 00023B7 PDF