K6R1008V1D

Contextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify

CY7C4255V

Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V
Contextual Info: fax id: 5422 CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V PRELIMINARY 8K/16K/32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to

IBM0418A11NLAA

Abstract: IBM0436A11NLAA
Contextual Info: . Preliminary IBM0436A11NLAA IBM0418A11NLAA 32Kx36 & 64Kx18 SRAM Features • 32Kx36 or 64Kx18 organizations • Registered Outputs • 0.25 Micron CMOS technology • 30 Ohm Drivers • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Common I/O

km6161000bl7

Contextual Info: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply

G530T

Contextual Info: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

CY7C4255V

Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17
Contextual Info: CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V V CYPRESS 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfac­ es. All are 18 bits wide and are pin/functionally compatible to

metal case REGULATOR IC 7812 pin diagram

Abstract: CY7C4275 CY7C4285 CY7C42X5
Contextual Info: fax id: 5416 ^;aaazgg st CY7C4275 CY7C4285 PRELIMINARY ; U I F lm c b ti 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries 32K x 18 (C Y 7 C 42 75 ) 64K x 18 (C Y 7 C 42 85 )

TT1102

Abstract: 100PF
Contextual Info: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536

MR0A16A

Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Contextual Info: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

Contextual Info: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a

Contextual Info: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a

Contextual Info: In-Circuit Programming of the MX26C1024A 1M-Bit 64Kx16 CMOS Multiple-Time-Programmable ROM Application Note 09/16/97 -This application note describes how to erase and program the MX26C1024A, 1M-bit MTP

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

K6R1016C10

Abstract: k6r1016c1c
Contextual Info: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.

Contextual Info: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA

Contextual Info: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: Issue 2.0: July 1069 MS1664BCX-25/35 64K MS1664BCX X 16 BiCMOS SRAM Module PRELIMINARY INFORMATION 1,048,576 High Speed BiCMOS Static RAM Module. Features Pin Definition Very Fast Access Times of 25/35 nS User Configuration at, 64Kx16,128Kx8 or 256Kx4 Industry Standard 40 Pin Ceramic DIP footprint

Contextual Info: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply

Contextual Info: PRELIMINARY KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B86 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of

Contextual Info: 64Kx18 Synchronous SRAM KM718B86 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718B86 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of Intel secondary caches. It is organized as 65,536 words

Contextual Info: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

CY7C4275V

Abstract: CY7C4285V CY7C42X5V
Contextual Info: fax id: 5422 CY7C4275V CY7C4285V PRELIMINARY 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4275V/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to

Contextual Info: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge

29F100T

Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz