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    G530T

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


    OCR Scan     		64Kx16 486/Pentium 15ns/20ns/25ns 67MHz Mb75Qflfl GG0b313 10H07-11-MAY95 HY6716110/111 4b750flfl 1DH07-11-MAY95 G530T PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve


    OCR Scan     		HY51V4260B 256Kx 16-bit 400mil 40pin 40/44pin 0D04273 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM536A414A M-Series •HYUNDAI 4M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414A is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are mounted for each


    OCR Scan     		HYM536A414A 36-bit HY5117404A HYM536A414AM/ASLM HYM536A414AMG/ASLMG 4b750Ã 1CE16-10-APR95 PDF