Untitled
Abstract: No abstract text available
Text: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data
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Original
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K6E0804C1E-C
64Kx4
K6E0804C1E-
28-SOJ-300
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PDF
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Untitled
Abstract: No abstract text available
Text: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA
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64Kx4
51C259L-12
51C259L-15
51C259L-20
51C259L
51C259L
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PDF
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Untitled
Abstract: No abstract text available
Text: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large
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64KX4
DPS5124
DPS5124-45C
DPS5124-55C
DPS5124-55I
24-55M
DPS6432-45C
DPS6432-55C
DPS6432-55I
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PDF
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a
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EDI8M1665C
64Kx16
EDI8M1665C
1024K-bit
64Kx4
64Kx4)
64Kx16
28Kx8
256Kx4
I8M1665C
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PDF
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Untitled
Abstract: No abstract text available
Text: i 'A I W H IT E / M I C R O E L E C T R O N I C S 64Kx4 SRAM W P S 64K 4- X S J X PRELIMINARY* PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN C O N FIG U R A T IO N TO P VIEW ■ Standard Commercial Off-The-Shelf COTS Memory Devices for Extended Temperature Range
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64Kx4
WPS64K4-XSJX
28LEAD,
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PDF
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Untitled
Abstract: No abstract text available
Text: _ EDI8466CA ^ ED I Electronic D e ig n s Inc. High Speed Monolithic 256K SRAM niF@M^TD i 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8466CA is a high performance CMOS Static RAM organized as 65,536 locations x 4 bits. The EDI8466CA offers an Output Enable function GS for
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EDI8466CA
64Kx4
EDI8466CA
EDI8466CA12MC
EDI8466CA1CMC
EDI8466CA15MC
EDI8466CA12RC
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PDF
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V53C464
Abstract: WJ 66 scr
Text: Nf VITEUC V53C261 FAMILY HIGH PERFORMANCE LOW POWER 64KX4 MULTIPORT VIDEO MEMORY WITH FAST PAGE MODE V V53C261 10 12 Max. RAS Access Time, tRAC 100 ns 120 ns Max Column Address Time, (trA A ) 45 ns 55 ns HIGH PERFORMANCE V53C261 Min. Fast Page Mode Cycle Time, (tp c )
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V53C261
64KX4
V53C261
V53C464
WJ 66 scr
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PDF
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Untitled
Abstract: No abstract text available
Text: Q S86442 High-Speed CMOS 64Kx4 Cache TAG RAM Q QS86442 ADVANCE INFORMATION FEATURES/BENEFITS Fast Match and Access times • Access time of15ns/20ns/25ns/35ns Commercial • Match time of 15ns/20ns/25ns/35ns Commercial • Low power, high-speed QCMOS technology
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OCR Scan
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S86442
64Kx4
QS86442
of15ns/20ns/25ns/35ns
15ns/20ns/25ns/35ns
300-mil,
28-pin
MIL-STD-883
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 :140 mA (Max.)
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KM64258C
64Kx4
KM64258C-12
KM64258C-15
KM64258C-20
KM64258CJ
28-SOJ-3QO
KM64258C
144-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM64258E
64Kx4
28-SOJ-300
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PDF
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64kx4 DRAM
Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
Text: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process
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64Kx4
256-cycle
250mW
100ns
100ns,
120ns,
150ns,
T-46-23-37
64kx4 DRAM
marking WMM
IC-012
MT42C4064
T-46
00024B1
TS PQ4 24
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PDF
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F16K
Abstract: 7306
Text: QS7306 Q 64K x 4 Ultra Deep FIFO Memory Q S7306 ADVAN CE INFORMATION F E A TU R E S /B E N E FIT S • • • • • 64Kx4 Ultra Deep FIFO Reversible A to B or B to A OE control pin 1/2,1/4, 1/16,1/32 status flags Directly cascades with another UD FIFO
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QS7306
QS7306
64Kx4
24-pin
F16K
7306
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PDF
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Untitled
Abstract: No abstract text available
Text: QS7316 Q 64K x 4 Ultra Deep Burst Mode Dual Port RAM QS7316 ADVANCE INFORMATION FE A TU R E S /B E N E FIT S • • • • • 64Kx4 Ultra Deep Dual Port Allows simultaneous access on both ports 4 cycles first read access, 1 cycle burst read access All operations occur on rising edge of clock
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QS7316
QS7316
64Kx4
50MHz
32-pin
16-bit
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PDF
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IMS1820E-25
Abstract: IMS1820M IMS1820P-25 IMS1820S-25 IMS1820W-25
Text: IMS1820 CMOS High Performance 64K x 4 Static RAM m o s D ESC R IPTIO N FE ATU R E S The IN M O S IM S1820 is a high perform ance 64Kx4 C M O S Static RAM. The IM S 1820 allows speed enhance m ents to existing 64K x 4 applications w ith the additional benefit of reduced pow er consum ption .
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IMS1820
300-mil
64Kx4
timi52
IMS1820
IMS1820E-25
IMS1820M
IMS1820P-25
IMS1820S-25
IMS1820W-25
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI8F1665C ^EDI B*ctronfc Designs In c." High Speed Megabit SRAM Module ILOMÔMÂiaV 64Kx16 Static RAM CMOS, High Speed Module Features The EDI8F1665C is a high speed 1 megabit Static RAM module organized as 64Kx16. This module is constructed from four 64Kx4 Static RAMs in SOJ packages on an epoxy
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EDI8F1665C
64Kx16
EDI8F1665C
64Kx16.
64Kx4
EDI8F1665C20MMC
EDI8F1665C25MMC
EDI8F1665C30MMC
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PDF
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EDI8465C35
Abstract: No abstract text available
Text: ^EDI _ EDI8465C Electronic D«*lgro Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8465C is a high speed CMOS Static RAM organized as 64Kx4. Inputs and outputs are TTL compatible and albw for direct interfacing with common system bus architecture.
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EDI8465C
64Kx4
EDI8465C
64Kx4.
MIL-STD-883,
EDI8465LP)
EDI8465C25QB
EDI8465C35QB
EDI8465C35
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PDF
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Untitled
Abstract: No abstract text available
Text: ^ E D I EDI8F2465C B«ctronle D#$Jgn* In e ." High Speed 1.5 Megabit SRAM Module UDDM 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2465C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is con structed from six 64Kx4 Static RAMs in SOJ packages on an
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EDI8F2465C
64Kx24
EDI8F2465C
64Kx24.
64Kx4
EDI8F2465C20MMC
EDI8F2465C25MMC
EDI8F2465C30MMC
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PDF
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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PDF
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Untitled
Abstract: No abstract text available
Text: QS86440 High-Speed CMOS 64Kx4 SRAM with Common I/O Q Q S86440 ADVANCE INFORMATION FEATURES/BENEFITS • High Speed Access and Cycle times • 12ns/15ns/20ns/25ns Commercial • 15ns/20ns/25ns/35ns Military • TTL compatible I/O • Low power, high-speed QCMOS technology
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QS86440
64Kx4
S86440
12ns/15ns/20ns/25ns
15ns/20ns/25ns/35ns
MIL-STD-883,
24-pin
28-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Q S7316 64K x 4 Ultra Deep Q QS7316 Burst Mode Dual Port RAM in f o r m a t io n FEATURES/BENEFITS 64Kx4 Ultra Deep Dual Port Allows simultaneous access on both ports 4 cycles first read access, 1 cycle burst read access All operations occur on rising edge of clock
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S7316
QS7316
64Kx4
50MHz
32-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: SRAM Test Configuration Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load +5V Figure 1. GNDto 3.0V 3 ns 1.5V 1.5V See Figures +5V Output test loads for: 4Kx4, 16Kx4, 64Kx4, 32Kx8 &128Kx8 SRAMs Except Low-Power
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16Kx4,
64Kx4,
32Kx8
128Kx8
8Kx18
8Kx16
32Kx8
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PDF
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A7 transistor
Abstract: No abstract text available
Text: QS86447 High-Speed CMOS 64Kx4 SRAM . _ , , . . with Address Latch Q QS86447 IN INFORMATION FE A T U R E S /B E N E F IT S • • • • • High Speed Access and Cycle times 15ns/20ns/25ns/35ns Commercial Common I/O with Output Enable Low power, high-speed QCMOS technology
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OCR Scan
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QS86447
64Kx4
15ns/20ns/25ns/35ns
MIL-STD-883
300-mil,
28-pin
QS86447
A7 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SM33264 2MBit 64Kx 32 CMOS Fast SRAM Module General Description Features The SM33264 is a high performance, 2-megabit static RAM module organized as 64K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 64Kx4 high speed static RAMs
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SM33264
64-pin,
64Kx4
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PDF
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Untitled
Abstract: No abstract text available
Text: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA
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OCR Scan
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51C258LT
64Kx4
51C258L-12
51C258L-15
51C258L-20
51C258L
51C258L
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PDF
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