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    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 64Mx16 TS128MMQ64V5Q TS128MMQ64V5Q 64bits DDR2-533 64Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit)

    H5MS1G62

    Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
    Text: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 64Mx16bit) 16bit) H5MS1G62MFP page22) 00Typ. H5MS1G62 H5MS1G62MFP-J3M hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M

    hynix nand 1G

    Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) hynix nand 1G hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory

    HY27US081G1M

    Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
    Text: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27US 128Mx8bit 64Mx16bit) HY27US081G1M HY27US161G1M HY27US081G1M hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 1024MB 64Mx16 TS1GPA1024U5 TS1GPA1024U5 64bits DDR2-533 64Mx16bits 172-pin

    85X15

    Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
    Text: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) 85X15 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit)

    FBGA 63

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit) Chan48-lead FBGA 63

    hynix nand flash otp

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit) FBGA63 hynix nand flash otp

    HY27UF081G2A

    Abstract: HY27UF081G2A-FP HY27UF081G2A-S HY27UF 63FBGA hynix nand 1G HY27UF161G2A Y27UF081G2A HY27UF081G2AFP
    Text: HY27UF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 128Mx8bit 64Mx16bit) HY27UF081G2A HY27UF161G2A HY27UF081G2A HY27UF081G2A-FP HY27UF081G2A-S 63FBGA hynix nand 1G HY27UF161G2A Y27UF081G2A HY27UF081G2AFP

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 667 SO-DIMM 1024MB With 64Mx16 CL5 TS128MSQ64V6Q Description Placement The TS128MSQ64V6Q is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 1024MB 64Mx16 TS128MSQ64V6Q TS128MSQ64V6Q 64bits DDR2-667 64Mx16bits 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 800 SO-DIMM 1GB With 64Mx16 CL6 TS128MSQ64V8W Description Placement The TS128MSQ64V8W is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8W consists of 8pcs 64Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 64Mx16 TS128MSQ64V8W TS128MSQ64V8W 64bits DDR2-800 64Mx16bits 200-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit)

    HY27SF081G2A

    Abstract: HY27SF081G2AFP 128M*8BIT 64mx16 hynix nand 1G 63FBGA nand flash HYNIX 1gb
    Text: HY27SF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27SF081G2A HY27SF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27SF 128Mx8bit 64Mx16bit) HY27SF081G2A HY27SF161G2A HY27SF081G2A HY27SF081G2AFP 128M*8BIT 64mx16 hynix nand 1G 63FBGA nand flash HYNIX 1gb

    64MX16

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 64Mx16 TS128MMQ64V5Q TS128MMQ64V5Q 64bits DDR2-533 64Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: HY27US 08/16 1G1M Series HY27SS(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Mar. 2004 Preliminary


    Original     		PDF HY27US HY27SS 128Mx8bit 64Mx16bit)

    64Mx16bit

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSTX 64Mx16bit DDR SDRAM FEATURES Double-data-rate architecture; two data transfers per clock cycle All inputs except data & DM are sampled at the positive going edge of the system clock CK Bidirectional data strobe (DQS)


    Original     		PDF 64Mx16bit W3E64M16S-XSTX 8K/64ms 66pin 200MHz 250MHz 266MHz

    BA4111

    Abstract: RA13 H55S1G62MFP
    Text: 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb 64Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF x16I/O 64Mx16bit) H55S1G62MFP 16bit 100mA 120mA 450uA 500uA 200us BA4111 RA13

    HY27SFXX1G2M

    Abstract: HY27UF HY27 hynix hy27
    Text: HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit) HY27SFXX1G2M HY27 hynix hy27

    hynix hy27

    Abstract: hynix nand HY27 hynix nand PROGRAMMING HY27S HY27UF hy27uf08 hynix nand 1G hynix nand flash reset nand flash HYNIX
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit) hynix hy27 hynix nand HY27 hynix nand PROGRAMMING HY27S hy27uf08 hynix nand 1G hynix nand flash reset nand flash HYNIX

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit)

    hy27 nand

    Abstract: No abstract text available
    Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read


    Original     		PDF HY27UF HY27SF 128Mx8bit 64Mx16bit) hy27 nand

    HY27UF081G2A

    Abstract: "NAND Flash" HY27UF hy27uf161g2a
    Text: Preliminary HY27UF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 128Mx8bit 64Mx16bit) HY27UF081G2A HY27UF161G2A HY27UF081G2A "NAND Flash" hy27uf161g2a