LM3464
Abstract: TSSOP-28 CMHZ5276B flyback led driver with pwm dimming
Text: LM3464/LM3464A LED Driver with Dynamic Headroom Control and Thermal Control Interfaces General Description Features The LM3464/64A is a 4-channel high voltage current regulator that provides a simple solution for LED lighting applications. The LM3464/64A provides four individual current
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LM3464/LM3464A
LM3464/64A
LM3464
TSSOP-28
CMHZ5276B
flyback led driver with pwm dimming
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LM3464
Abstract: flyback led driver with pwm dimming TSSOP-28
Text: LM3464/LM3464A LED Driver with Dynamic Headroom Control and Thermal Control Interfaces General Description Features The LM3464/64A is a 4-channel high voltage current regulator that provides a simple solution for LED lighting applications. The LM3464/64A provides four individual current
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LM3464/LM3464A
LM3464/64A
LM3464
flyback led driver with pwm dimming
TSSOP-28
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LM3464
Abstract: 12V80 TSSOP-28 CMHZ5276B 12V-80V diode zx
Text: LM3464/LM3464A LED Driver with Dynamic Headroom Control and Thermal Control Interfaces General Description Features The LM3464/64A is a 4-channel high voltage current regulator that provides a simple solution for LED lighting applications. The LM3464/64A provides four individual current
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LM3464/LM3464A
LM3464/64A
LM3464
12V80
TSSOP-28
CMHZ5276B
12V-80V
diode zx
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Untitled
Abstract: No abstract text available
Text: FDB13AN06A0 / FDP13AN06A0 N-Channel PowerTrench MOSFET 60V, 64A, 13mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 64A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDB13AN06A0
FDP13AN06A0
O-220AB
O-263AB
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LM3464
Abstract: LM3464A
Text: LM3464,LM3464A LM3464/LM3464A LED Driver with Dynamic Headroom Control and Thermal Control Interfaces Literature Number: SNVS652E LM3464/LM3464A LED Driver with Dynamic Headroom Control and Thermal Control Interfaces General Description Features The LM3464/64A is a 4-channel high voltage current regulator that provides a simple solution for LED lighting applications. The LM3464/64A provides four individual current
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LM3464
LM3464A
LM3464/LM3464A
SNVS652E
LM3464/64A
LM3464A
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mosfet 4456
Abstract: 2SK1388 LX1665 class d high power mosfet amp schematics B9 mosfet datasheet IRL3102 IRL3303 IRLZ44 LX1664 LX1664A
Text: LX1664/64A, LX1665/65A D UAL O UTPUT PWM C ONTROLLERS T H E I P N F I N I T E O W E R I O F P N N O VA T I O N D R O D U C T I O N DESCRIPTION The LX1664/64A and LX1665/65A are monolithic switching regulator controller IC’s designed to provide a low cost,
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LX1664/64A,
LX1665/65A
LX1664/64A
LX1665/65A
LX1664A
LX1665A
mosfet 4456
2SK1388
LX1665
class d high power mosfet amp schematics
B9 mosfet datasheet
IRL3102
IRL3303
IRLZ44
LX1664
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IXFK64N50P
Abstract: IXFX64N50P 64N50 PLUS247 64N50P
Text: IXFK64N50P IXFX64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode = = ≤ ≤ 500V 64A Ω 85mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500
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IXFK64N50P
IXFX64N50P
200ns
O-264
64N50P
IXFK64N50P
IXFX64N50P
64N50
PLUS247
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BDV64
Abstract: transistors BDV64B BDV64B BDV64A BDV64C
Text: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV65/65A/65B/65C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier
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BDV64/64A/64B/64C
BDV65/65A/65B/65C
BDV64
BDV64B
BDV64C
BDV64A
BDV64
transistors BDV64B
BDV64B
BDV64A
BDV64C
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BDV65
Abstract: BDV65C BDV65B BDV65A
Text: SavantIC Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.
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BDV65/65A/65B/65C
BDV64/64A/64B/64C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65C
BDV65B
BDV65A
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transistors BDV64B
Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
Text: SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.
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BDV64/64A/64B/64C
BDV65/65A/65B/65C
BDV64
BDV64A
BDV64B
BDV64C
transistors BDV64B
BDV64
BDV64B
BDV64A
BDV64C
BDV65, BDV64
64b diode
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Untitled
Abstract: No abstract text available
Text: Bulletin I27301 01/07 GB75XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 64A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27301
GB75XF60K
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BDV65
Abstract: BDV65A BDV65B BDV65C
Text: Inchange Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV64/64A/64B/64C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier
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BDV65/65A/65B/65C
BDV64/64A/64B/64C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFK64N50P IXFX64N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode = = ≤ ≤ 500V 64A Ω 85mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500
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IXFK64N50P
IXFX64N50P
200ns
O-264
64N50P
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I27301
Abstract: L200H
Text: Bulletin I27301 01/07 GB75XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 64A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27301
GB75XF60K
80merchantability,
12-Mar-07
L200H
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76437S
Abstract: HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1
Text: HUFA76437P3, HUFA76437S3S Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S
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HUFA76437P3,
HUFA76437S3S
O-220AB
O-263AB
HUFA76437P3
76437S
HUFA76437P3
HUFA76437S3S
HUFA76437S3ST
TB334
189E1
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Untitled
Abstract: No abstract text available
Text: LM3464, LM3464A www.ti.com SNVS652E – APRIL 2010 – REVISED JUNE 2011 LED Driver with Dynamic Headroom Control and Thermal Control Interfaces Check for Samples: LM3464, LM3464A FEATURES DESCRIPTION • The LM3464/64A is a 4-channel high voltage current
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LM3464,
LM3464A
SNVS652E
LM3464/64A
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IXGN82N120B3H1
Abstract: IXGN82N120 IF110 IXGN82N120B3H
Text: Advance Technical Information IXGN82N120B3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
IXGN82N120B3H1
IXGN82N120
IF110
IXGN82N120B3H
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
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TB334
Abstract: 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST
Text: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S
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HUF76437P3,
HUF76437S3S
O-220AB
O-263AB
HUF76437P3
TB334
76437S
AN9321
AN9322
HUF76437P3
HUF76437S3S
HUF76437S3ST
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IXFK64N60P3
Abstract: 64N60
Text: IXFK64N60P3 IXFX64N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 64A 100m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C
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IXFK64N60P3
IXFX64N60P3
250ns
O-264
64N60P3
IXFK64N60P3
64N60
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RM-64A
Abstract: 655-nm siemens led
Text: 47E D SIEM ENS • ÖSBSbOS 0Q2bflflD 2 « S I E G RM-64A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0038 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-64A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and uniform 655 nm emission, this device is ideal for
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RM-64A
A235bOS
655-nm
siemens led
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siemens optoelectronic
Abstract: No abstract text available
Text: i*7E T> • SIEM ENS 6S35b05 DOebflflD 2 « S I E G RM-64A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0038 P-metal anode Diffusion Barrier Epitaxial Layer Substrate ■ « - N-metal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-64A is a mask-diffused GaAsP
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6S35b05
RM-64A
siemens optoelectronic
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Untitled
Abstract: No abstract text available
Text: BDT64; 64A BDT64B; 64C _ / V SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. NPN complements are BDT65,
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BDT64;
BDT64B;
O-220
BDT65,
BDT65A,
BDT65B
BDT65C.
BDT64
bbS3T31
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bot64
Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
Text: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,
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BDT64;
BDT64B;
O-220
BOT65,
BDT65A,
BDT65B
BDT65C.
BDT64
bot64
BDT65A
BDT65C
BDT64B
DT6-4
64a diode
BOT65
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