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    64K PAGE MODE DRAM Search Results

    64K PAGE MODE DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-XP85B102DX-000 Amphenol Cables on Demand Amphenol SF-XP85B102DX-000 SFP28 25GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (Duplex LC Connector) by Amphenol XGIGA [XP85B102DX] Datasheet
    SF-QXP85B402D-000 Amphenol Cables on Demand Amphenol SF-QXP85B402D-000 QSFP28 100GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (MTP/MPO Connector) by Amphenol XGIGA [QXP85B402D] Datasheet
    FO-DLSCDLLC00-002 Amphenol Cables on Demand Amphenol FO-DLSCDLLC00-002 SC-LC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x SC Male to 2 x LC Male 2m Datasheet
    FO-LSDUALSCSM-003 Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m Datasheet

    64K PAGE MODE DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GLT41116-35J4

    Abstract: GLT710008
    Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and


    Original     		PDF GLT41116 GLT41116 256-cycle 256x16 400mil 2701Northwestern GLT41116-35J4 GLT710008

    GLT41316-40J4

    Abstract: No abstract text available
    Text: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and


    Original     		PDF GLT41316 GLT41316 256-cycle 256x16 400mil 2701Northwestern GLT41316-40J4

    GLT41116-40J4

    Abstract: GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4
    Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Feb 2004 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and


    Original     		PDF GLT41116 GLT41116 256-cycle 256x16 400mil GLT41116-40J4 GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4

    Untitled

    Abstract: No abstract text available
    Text: MT4C4067 883C 64K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL


    Original     		PDF MT4C4067 MIL-STD-883 18-Pin 150mW 256-cycle MIL-STD-883 DS000012

    IC41C1665-35K

    Abstract: IC41C1665-35KI
    Text: IC41C1665 IC41LV1665 Document Title 64K x16 bit Dynamic RAM with Fast Page Mode Revision History Revision No History Draft Date 0A Initial Draft October 17,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC41C1665 IC41LV1665 DR031-0A IC41C1665 IC41LV1665 16Fast IC41LV1665-25KI IC41LV1665-25TI IC41C1665-35K IC41C1665-35KI

    GLT41016

    Abstract: GLT41016-35J4 GLT41016-40J4
    Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 1997 Rev 1 Features : Description : The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has


    Original     		PDF GLT41016 GLT41016 256-cycle 400mil 2701Northwestern GLT41016-35J4 GLT41016-40J4

    Untitled

    Abstract: No abstract text available
    Text: IC41C1664 IC41LV1664 Document Title 64K x 16 bit Dynamic RAM with EDO Page Mode Revision History Revision No History Draft Date 0A Initial Draft November 15,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC41C1664 IC41LV1664 DR033-0A IC41C1664 IC41LV1664 16-bit IC41LV1664-30K IC41LV1664-30T

    T221160A

    Abstract: No abstract text available
    Text: tm TE CH T221160A 64K x 16 DYNAMIC RAM DRAM FAST PAGE MODE FEATURES • High speed access time : 25/30/35/40 ns • Industry-standard x 16 pinouts and timing functions. • Single 5V ±10% power supply. • All device pins are TTL- compatible. • 256-cycle refresh in 4ms.


    Original     		PDF T221160A 256-cycle I/013 I/012 I/011 I/010 A160A 40-LEAD 80typ. T221160A

    GLT41016-30J4

    Abstract: EDO Corporation 64k dynamic RAM
    Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has


    Original     		PDF GLT41016 GLT41016 256-cycle 400mil 2701Northwestern GLT41016-30J4 EDO Corporation 64k dynamic RAM

    KM416C60J

    Abstract: KM416C60 km416c60-j JDQ14
    Text: KM416C60 CMOS DRAM 64K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal


    OCR Scan     		PDF KM416C60 64Kx16 KM416C60J KM416C60 km416c60-j JDQ14

    Untitled

    Abstract: No abstract text available
    Text: MT4C1664/5 64K X 16 D R AM MICRON DRAM 64K x 16 DRAM FAST PAGE MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF MT4C1664/5 225mW 256-cycle MT4C1664 MT4C1665 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. DRAM AS4C4067 883C 64K X 4 DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View SMD 5962-92132 MEL-STD-883 18-Pin DIP FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL


    OCR Scan     		PDF AS4C4067 MEL-STD-883 18-Pin 150mW 256-cycle MIL-STD-883 QGG1403

    92132

    Abstract: 64kx4 AS4C4067 1CP-N15 CSH110
    Text: AUSTIN SEMICONDUCTOR, INC. a s 4C4067 64K X 883C 4 DRAM 64K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICA TIO N • • PIN ASSIGNMENT Top View S\1D 5962-92132 MIL-STD-883 18-Pin DIP FEATURES • • • • • • • • Industry standard pinout and timing


    OCR Scan     		PDF AS4C4067 SMD5962-92132 MIL-STD-883 150mW 256-cycle 120a-. 150ns MIL-STD-883 92132 64kx4 1CP-N15 CSH110

    4264 dram

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y INC 55E D • blllS4'ì DDDSb?^ 153 ■ MRN PRELIMINARY W1T4C4264 883C 64K X 1 DRAM | W |! C R Q N MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


    OCR Scan     		PDF W1T4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle MT4C4264 4264 dram

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T4C 1672 64K x 16 DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical


    OCR Scan     		PDF 350mW 256-cycle 100ns 400mil) 475mil) 40-Pin DQ9-DQ16) MT4C1672

    65536X4

    Abstract: No abstract text available
    Text: A U S T I N S I MIC O N D I C T O R MI?F4067 8?C 64K X 4 D R A M IN< DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-92132 • M IL-STD -883 18-Pin DIP (D-6) FEATURES ÖE [ 1 • Industry standard pinout and tim ing


    OCR Scan     		PDF F4067 18-Pin 256-cycle MIL-STD-883 MT4C4067 DS000012 65536X4

    NMOS DRAM

    Abstract: KM4164BP KM4164 km4164b
    Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­


    OCR Scan     		PDF KM4164B KM4164B-10 KM4164B-12 KM4164B-15 100ns 120ns 150ns 190ns 220ns 260ns NMOS DRAM KM4164BP KM4164 km4164b

    Untitled

    Abstract: No abstract text available
    Text: CRÛ MT4067 DRAM 64K X 4 DRAM DRAM PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout, timing and functions • All inputs, outputs, and clocks are fully TTL compatible • Single +5V±10% power supply • Low power, 15mW standby; 150mW active, typical


    OCR Scan     		PDF MT4067 150mW 256-cycle 18-Pin

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    4264 dram

    Abstract: No abstract text available
    Text: AUSTI N S E M I C O N D U C T O R INC bOE D I D O E l l ? G G G G 1 1 4 7Ü4 H A U S T K K tL IM IN A K Y MT4C4264 883C 64K X 1 DRAM |U|IC=RON MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


    OCR Scan     		PDF MT4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle 4264 dram

    smd T4C

    Abstract: No abstract text available
    Text: DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 18-Pin DIP (D-6) • M IL-STD-883 FEATURES OPTIONS 1 0 1 • Industry standard pinout and tim ing • All inputs, outputs and clocks are fully TTL


    OCR Scan     		PDF IL-STD-883 18-Pin 256-cycle MIL-STD-883 MT4C4067 DSQ00012 smd T4C

    M51C262

    Abstract: MSM51C262 IS916 3CX5
    Text: O K I semiconductor M S M 5 1 C 2 6 2 _ _ High Performance Low Power 64K x 4 Multi-port Memory with Fast Page Mode GENERAL DESCRIPTION The OKI MSM51C262 is a high speed 65,536 x 4-bit multiport CMOS dynamic memory. The tw o


    OCR Scan     		PDF MSM51C262 M51C262 IS916 3CX5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY C R O M T4C 1668/9 N 64K x 16 DRAM LOW POWER, FAST PAGE MODE FEA TU R ES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • H igh perform ance, CM O S silicon gate process • Single +5V±10% pow er supply


    OCR Scan     		PDF MT4C1668/9 200mW MT4C1668 MT4C1669 125ns

    Untitled

    Abstract: No abstract text available
    Text: «p AUSTIN SEMICONDUCTOR, INC. DRAM 64K MI 4,? ,40?7 6 4 K x 4 DRAM X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES 01 [ DQ1 [ 2 DQ2 [ 3 WE [ 4 RAS [ 5 A6 [ 6


    OCR Scan     		PDF MIL-STD-883 18-Pin 150mW 256-cycle 18CLCC