Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    64KX16 Search Results

    64KX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8M624S40CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    7M624S45CB Renesas Electronics Corporation 64KX16 MEGABIT RAM MODULE Visit Renesas Electronics Corporation
    8M624S35C Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    8M624S35CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    8M624S60CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation

    64KX16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D PDF

    MR0A16A

    Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
    Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35 PDF

    Untitled

    Abstract: No abstract text available
    Text: In-Circuit Programming of the MX26C1024A 1M-Bit 64Kx16 CMOS Multiple-Time-Programmable ROM Application Note 09/16/97 -This application note describes how to erase and program the MX26C1024A, 1M-bit MTP


    Original     		MX26C1024A 64Kx16) MX26C1024A, 12-volts 500ms PDF

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D PDF

    K6R1016C10

    Abstract: k6r1016c1c
    Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.


    Original     		K6R1016C1C-C/C-L, K6R1016C1C-I/C-P 64Kx16 48-fine K6R1016C1C-Z K6R1016C1C-F 80/Typ. 25/Typ. K6R1016C10 k6r1016c1c PDF

    Untitled

    Abstract: No abstract text available
    Text: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		K6R1016V1C-C/C-L, K6R1016V1C-I/C-P 64Kx16 48-fine K6R1016V1C-Z K6R1016V1C-F I/O16 002MIN PDF

    29F100T

    Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100 PDF

    N01L1618N1A

    Abstract: N01L1618N1AB N01L1618N1AT N01L163WN1A 2313103
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L1618N1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N01L1618N1A is an integrated memory


    Original     		N01L1618N1A 64Kx16 N01L1618N1A N01L163WN1A, N01L1618N1AB N01L1618N1AT N01L163WN1A 2313103 PDF

    MX29F100T

    Abstract: No abstract text available
    Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		HY62QF16100 64Kx16bit 16bit. 85/ON 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology


    Original     		HY62SF16100C 64Kx16bit 16bit. HY62ECKAGE 48ball SM-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100C uses high performance full CMOS process technology and designed for high speed low


    Original     		HY62UF16100C 64Kx16bit 16bit. 400mil UF16100C 48ball SM-1994. PDF

    29F100T

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T PDF

    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7 PDF

    TT1102

    Abstract: 100PF
    Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536


    OCR Scan     		KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a


    OCR Scan     		EDI8M1665C 64Kx16 EDI8M1665C 1024K-bit 64Kx4 64Kx4) 64Kx16 28Kx8 256Kx4 I8M1665C PDF

    Untitled

    Abstract: No abstract text available
    Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a


    OCR Scan     		EDI8M1664C50/60/70/85/100 64Kx16 EDI8M1664C 32Kx8 32Kx16bitseach. DQ8-DQ15) EDI8M81664C EDI8U1664C50/60/70/85/100 PDF

    Untitled

    Abstract: No abstract text available
    Text: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA


    OCR Scan     		27V102 64Kx16) FDIP40W PLCC44 M27V102 M27C1024 M27V102 TSQP40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Issue 2.0: July 1069 MS1664BCX-25/35 64K MS1664BCX X 16 BiCMOS SRAM Module PRELIMINARY INFORMATION 1,048,576 High Speed BiCMOS Static RAM Module. Features Pin Definition Very Fast Access Times of 25/35 nS User Configuration at, 64Kx16,128Kx8 or 256Kx4 Industry Standard 40 Pin Ceramic DIP footprint


    OCR Scan     		MS1664BCX-25/35 MS1664BCX 64Kx16 128Kx8 256Kx4 16bit 2880mW 2020mW 1590mW MS16644BCXMB-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge


    OCR Scan     		64Kx16 486/Pentium 6ns/9ns/12ns 75MHz 486/Pe 10H05-11-MAY95 HY6716100/101 1DH05-11-MAY95 HY6716100C PDF

    A15A

    Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
    Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


    OCR Scan     		EDI8L21664V 2x64Kx16SRAM TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC A15A A15B EDI8L21664V MO-151 9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F1665C ^EDI B*ctronfc Designs In c." High Speed Megabit SRAM Module ILOMÔMÂiaV 64Kx16 Static RAM CMOS, High Speed Module Features The EDI8F1665C is a high speed 1 megabit Static RAM module organized as 64Kx16. This module is constructed from four 64Kx4 Static RAMs in SOJ packages on an epoxy


    OCR Scan     		EDI8F1665C 64Kx16 EDI8F1665C 64Kx16. 64Kx4 EDI8F1665C20MMC EDI8F1665C25MMC EDI8F1665C30MMC PDF