65 NM CMOS Search Results

65 NM CMOS Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
MG80C186XL-20/R	Rochester Electronics LLC	Microprocessor, CMOS
MD87C51-16/B	Rochester Electronics LLC	Microcontroller, CMOS
A80C286-12	Rochester Electronics LLC	Microprocessor, CMOS

65 NM CMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GSM transmitter receiver Abstract: GSM Transceiver chip GSM radio Transceiver chip NS3251 polar loop transmitter digrf Text: Product Brief NS3251 65 nm GSM/GPRS/EDGE Quad-Band CMOS Transceiver System-on-a-Chip with DigRF Interface Features Benefits • True Quad-Band Band GSM/GPRS/EDGE Capability •  65 nm CMOS Compatible with High Performance Digital Baseband Cores Fully Integrated Single-Chip GSM/GPRS/EDGE	Original	NS3251 GSM transmitter receiver GSM Transceiver chip GSM radio Transceiver chip NS3251 polar loop transmitter digrf	PDF
broadcom cellular transceiver Abstract: BCM2085 DigRF polar modulator transceiver Broadcom cellular CORDIC based direct digital frequency synthesizer polar loop transmitter circuit diagram transceiver signal gsm polar architecture gmsk transceiver DAC Text: BCM2085 Brief 65-nm CMOS DigRF EDGE CELLULAR TRANSCEIVER SUMMARY OF BENEFITS FEATURES • Quad-band CMOS EDGE/GPRS RF transceiver • Advanced 65-nm standard digital CMOS design for lowest • Supports multislot GPRS and EDGE operation up to Class 34 • Innovative polar transmit architecture	Original	BCM2085 65-nm BCM2085 2085-PB00-R broadcom cellular transceiver DigRF polar modulator transceiver Broadcom cellular CORDIC based direct digital frequency synthesizer polar loop transmitter circuit diagram transceiver signal gsm polar architecture gmsk transceiver DAC	PDF
2015 static ram Abstract: Position Estimation VIRTEX-5 DDR2 DDR3 constraints low power and area efficient carry select adder nmos 90nm Text: White Paper 40-nm FPGA Power Management and Advantages The 40-nm process offers clear benefits over prior nodes, including the 65-nm node and the more recent 45-nm node. One of the most attractive benefits is higher integration, which enables semiconductor manufacturers to pack greater	Original	40-nm 65-nm 45-nm 2015 static ram Position Estimation VIRTEX-5 DDR2 DDR3 constraints low power and area efficient carry select adder nmos 90nm	PDF
SSTL-18 Abstract: SIGNAL PATH designer Text: Cyclone III Simultaneous Switching Noise SSN Design Guidelines Application Note 508 December 2007, ver. 1.0 Introduction Low-cost FPGAs designed on 90-nm and 65-nm process technologies are made to support high performance applications with system clocks and	Original	90-nm 65-nm SSTL-18 SIGNAL PATH designer	PDF
Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Abstract: Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband Text: Title Page Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Version 1.01 June 8, 2007—Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora-	Original	2007--Preliminary DL-0178) Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband	PDF
d880 Abstract: transistor d880 d880 datasheet D880 pin out DL-0159 XDR Rambus d880 y sony x35 D870 d880 transistor Text: Title Page PowerXCell 8i CMOS SOI 65 nm Hardware Initialization Guide Version 1.2 December 8, 2008 Copyright and Disclaimer Copyright International Business Machines Corporation 2007, 2008 All Rights Reserved Printed in the United States of America December 2008	Original		PDF
Untitled Abstract: No abstract text available Text: BCM2070 Brief BLUETOOTH®2.1 + EDR SINGLE-CHIP HCI SOLUTION SUMMARY OF BENEFITS FEATURES • Processed with 65-nm LP CMOS technology power consumption, and highest • Smallest packages, lowest ® • Built-in power amplifier to support class 1 transmit output power	Original	BCM2070 65-nm BCM2070 2070-PB01-R	PDF
STA5630 Abstract: QFN-32 power supply 12v tcxo 16.368MHz Text: STA5630 Low power GPS RF front-end Data brief Features • Integrated LNA ■ Low power consumption < 25 mW ■ 1.8 V supply voltage ■ GPS and Galileo compliant ■ Minimum external components ■ Serial interface ■ 3 bits A/D converter ■ CMOS 65 nm technology	Original	STA5630 QFN-32 VFQFPN32 STA5630 power supply 12v tcxo 16.368MHz	PDF
Gigabit Ethernet SFP broadcom Abstract: BCM8752 clause 37 sfp 10 gbps MDIO clause 45 xfi to xfi Cl37 1000BASE-X scrambler cl36 Text: BCM8752 Brief DUAL-CHANNEL 10 GBE SFI-TO-XFI PHY WITH EDC SUMMARY OF BENEFITS FEATURES • Dual-channel SFI-to-XFI Physical Layer PHY developed in • Single-reference clock input, enables use of a low-cost 156.25 low-power 65 nm CMOS process technology	Original	BCM8752 64B/66B BCM8752 121-pin 8752-PB00-R Gigabit Ethernet SFP broadcom clause 37 sfp 10 gbps MDIO clause 45 xfi to xfi Cl37 1000BASE-X scrambler cl36	PDF
BCM8750 Abstract: xfi to xfi 10G BIST PRBS clause 37 SFP CML 1000BASE-X microcontroller optics fiber gearbox Gigabit Ethernet SFP broadcom Text: BCM8750 Brief DUAL-CHANNEL 10-GBE SFI-TO-XFI PHY WITH EDC SUMMARY OF BENEFITS FEATURES • Dual-channel SFI-to-XFI Physical Layer PHY developed in • Single-reference clock input, enables use of a low-cost 156.25 low-power 65 nm CMOS process technology	Original	BCM8750 10-GBE interfac64B/66B BCM8750 121-pin 8750-PB02-R xfi to xfi 10G BIST PRBS clause 37 SFP CML 1000BASE-X microcontroller optics fiber gearbox Gigabit Ethernet SFP broadcom	PDF
hearing aids Abstract: low power hearing aids transistor hearing aid digital hearing aids Text: Wafer technologies for digital hearing aids Ultra low power integrated solutions in 65 nm technology Today’s semiconductor technologies permit more and more functions to be embedded in smaller devices, greatly improving the performance and comfort of hearing aids.	Original	FLHEARMED0808 hearing aids low power hearing aids transistor hearing aid digital hearing aids	PDF
STA5630 Abstract: 4 MHz tcxo Analog Marking Information st marking code QFN-32 power supply 12v V18-IO VFQFPN32 a1 lna Text: STA5630 Low power GPS RF front-end Data brief Features • Integrated LNA ■ Low power consumption <25 mW ■ 1.8 V supply voltage ■ GPS and Galileo compliant ■ Minimum external components ■ Serial interface ■ 3 bits A/D converter ■ CMOS 65 nm technology	Original	STA5630 QFN-32 VFQFPN32 STA5630 4 MHz tcxo Analog Marking Information st marking code power supply 12v V18-IO VFQFPN32 a1 lna	PDF
diagram circuit usb mp3 player with radio fm lcd Abstract: bcm21331 bcm59035 Broadcom BCM21331 diagram circuit usb mp3 player with radio fm usb WiFi circuit diagram wifi modem CIRCUIT DIAGRAM usb video player circuit diagram echo mixer circuit diagram bcm2048 Circuit Text: BCM21331 Single-Chip 65 nm EDGE Baseband + RF + Multimedia SUMMARY OF BENEFITS FEATURES • • • Enables high-performance, low-cost EDGE/GPRS handset design General Characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband processor	Original	BCM21331 480-Mbps 407-pin 21331-PB04-R diagram circuit usb mp3 player with radio fm lcd bcm21331 bcm59035 Broadcom BCM21331 diagram circuit usb mp3 player with radio fm usb WiFi circuit diagram wifi modem CIRCUIT DIAGRAM usb video player circuit diagram echo mixer circuit diagram bcm2048 Circuit	PDF
BCM59035 Abstract: diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085 Text: BCM21331 Single-Chip 65-nm EDGE Baseband + RF + Multimedia SUMMARY OF BENEFITS FEATURES • • • Enables high-performance, low-cost EDGE/GPRS handset design General Characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband processor	Original	BCM21331 65-nm 480-Mbps 208-MHz 407-pin 21331-PB02-R BCM59035 diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085	PDF

F0706 Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM" Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor	Original	DS06-20211-1E CS201 F0706 F0706 MoSys MoSys 1T sram "Single-Port RAM"	PDF
BroadR-Reach Abstract: BCM54881 s3mii twisted pair cable broadR-Reach 100BASE-FX Text: BCM54881 OCTAL 10/100BASE-TX ETHERNET BroadR-Reach TRANSCEIVER FEATURES SUMMARY OF BENEFITS • Low-cost, and low-power 8-port integration enables • Eight 10BASE-T/100BASE-TX and BroadR-Reach™ single-row, high-port density switches. transceivers in a single fully integrated 65 nm CMOS chip	Original	BCM54881 10/100BASE-TX 10BASE-T/100BASE-TX 1000m, 54881-PB00-R BroadR-Reach BCM54881 s3mii twisted pair cable broadR-Reach 100BASE-FX	PDF
bcm2048 Abstract: No abstract text available Text: BCM2153 Brief 7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost HSDPA/EDGE handset design General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor	Original	BCM2153 65-nm 480-Mbps 312-MHz ARM11â 208-Mhz 2153-PB02-R bcm2048	PDF
transistor 945P Abstract: 945p TRANsISTOR Socket 775 VID pinout socket 775 pinout bsel 775 MOTHERBOARD CIRCUIT diagram 945p socket am3 pinout LGA775 ITT DIODE W7 intel 775 motherboard diagram Text: Intel Celeron® D Processor 300Δ Sequence Datasheet – On 65 nm Process in the 775-Land Package March 2007 Document Number: 311826-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR	Original	775-Land transistor 945P 945p TRANsISTOR Socket 775 VID pinout socket 775 pinout bsel 775 MOTHERBOARD CIRCUIT diagram 945p socket am3 pinout LGA775 ITT DIODE W7 intel 775 motherboard diagram	PDF
bcm59035 Abstract: MMCV4 ARM11 processor broadcom bcm4325 Broadcom BCM2153 3g hsdpa signal antenna Diagram BCM4325 5 band equalizer 428PI 2153p Text: BCM2153 Brief 7.2-MBPS HEDGE 65-NM MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor • Complete system-on-a-chip, high-end multimedia with advanced audio,	Original	BCM2153 65-nm 480-Mbps 312-MHz ARM11 2153-PB03-R bcm59035 MMCV4 ARM11 processor broadcom bcm4325 Broadcom BCM2153 3g hsdpa signal antenna Diagram BCM4325 5 band equalizer 428PI 2153p	PDF
cpu socket mPGA479m Abstract: Transistor C4E intel 945 MOTHERBOARD SERVICE MANUAL intel core solo Text: Intel Core Duo Processor and Intel® Core™ Solo Processor on 65 nm Process Datasheet September 2006 Document Number: 309221-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR	Original		PDF
bcm2048 Abstract: Broadcom BCM2153 arm11 MIPS Text: BCM2153 Brief 7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost HSDPA/EDGE handset design General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor	Original	BCM2153 65-nm 480-Mbps 312-MHz ARM11â 208-Mhz 2153-PB01-R bcm2048 Broadcom BCM2153 arm11 MIPS	PDF
Untitled Abstract: No abstract text available Text: BCM21331 SINGLE-CHIP 65-nm EDGE BASEBAND + RF + MULTIMEDIA SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance and lowest cost EDGE/GPRS handset design General characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband	Original	BCM21331 65-nm 480-Mbps 208-MHz 389-pin 21331-PB01-R	PDF
U2740B-FP Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier Text: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm	OCR Scan	BPV23NF TSHA520. TSHA550. U426B-FP U2535B-FP U2538B-FP BFQ62 QFP64 PLCC44 DIP40 U2740B-FP NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier	PDF
Untitled Abstract: No abstract text available Text: NM24C65 65,536-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect SEM ICONDUCTOR TM NM24C65 65,536-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect General Description: Features: The NM 24C 65/C65L/C65LZ devices are 65,536 bits of CMOS	OCR Scan	NM24C65 536-Bit 65/C65L/C65LZ	PDF

65 NM CMOS Search Results

65 NM CMOS Result Highlights (5)

65 NM CMOS Datasheets Context Search

GSM transmitter receiver

broadcom cellular transceiver

2015 static ram

SSTL-18

Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide

d880

Untitled

STA5630

Gigabit Ethernet SFP broadcom

BCM8750

hearing aids

STA5630

diagram circuit usb mp3 player with radio fm lcd

BCM59035

F0706

BroadR-Reach

bcm2048

transistor 945P

bcm59035

cpu socket mPGA479m

bcm2048

Untitled

U2740B-FP

Untitled