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    ScioSense AS3930-DEMOSYSTEM

    BOARD DEMO FOR AS3930
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS3930-DEMOSYSTEM Box 2 1
    • 1 $300
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    • 100 $300
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    ams OSRAM Group AS3940-DEMO-SYS.V2.1

    BOARD DEMO FOR AS3940
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS3940-DEMO-SYS.V2.1 Box 1
    • 1 $607.5
    • 10 $607.5
    • 100 $607.5
    • 1000 $607.5
    • 10000 $607.5
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    ScioSense AS3930 DEMOSYSTEM

    NFC/RFID Development Tools AS3930 DEMOSYSTEM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AS3930 DEMOSYSTEM
    • 1 $300
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    MOSYS Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M1T1HT18FE32E MoSys High speed 1T-SRAM standard memory macro Original PDF
    M1T1HT18FE64E MoSys High speed flow-through 1-Mbit (16Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT18FL32E MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT18FL64E MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PE32E MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PE64E MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PL32E MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PL64E MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PZ32E MoSys High Speed Pipelined 1-mbit (32kx32) Standard 1t-sram Embedded Memory Macro Original PDF
    M1T1HT18PZ32E MoSys High speed pipelined 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT18PZ64E MoSys High speed pipelined 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1HT25FL32 MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT25FL64 MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1HT25PZ32 MoSys High speed pipelined 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1HT25PZ64 MoSys High speed pipelined 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1LT18FE32E MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1LT18FE64E MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T1LT18FL32E MoSys High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro Original PDF
    M1T1LT18FL64E MoSys High speed flow-through 1-Mbit (16Kx64) standard 1T-SRAM memory macro Original PDF
    M1T2HT18FE32E MoSys High speed flow-through 2-Mbit (64Kx32) standard 1T-SRAM memory macro Original PDF

    MOSYS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS16

    Abstract: MC8051M36 MC8051M36L-7R5VI
    Text: MC8051M36 36-Mbit: 1Mx36 MOSYS Symmetric Pipelined Burst SRAM The MC8051M36 is packaged in a standard 100 lead LQFP. Lowest Power The MC8051M36 affords systems dramatic power savings due to the benefits of its proprietary MoSys technology. Making it ideal for convection cooled applications, as well as


    Original     		PDF MC8051M36 36-Mbit: 1Mx36 MC8051M36 DS16 MC8051M36L-7R5VI

    MG802C256Q

    Abstract: DS06 MOSYS QFP-1420 MG802C256
    Text: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits


    Original     		PDF MG802C256 256Kx32 100MHz-166MHz 256Kx32 100-pin MG802C256Q DS06 MOSYS QFP-1420 MG802C256

    MoSys

    Abstract: No abstract text available
    Text: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63


    Original     		PDF MC803256K32, MC803256K36 256Kx32/36 133-166MHz 100-Pin MoSys

    PBSRAM

    Abstract: mosys GW 66 475 ci 94086 MC80364K64 64KX64
    Text: MC80364K64 Low Power 3.3V/2.5V MOSYS 64Kx64 PBSRAM • High performance, low power pipeline burst SRAM Ultra low power single chip 512Kbyte Cache for green PC and battery powered PC VSSQ - 39 N/C - 40 MODE - 41 A15 - 42 A14 - 43 A13 - 44 VDD - 45 VSS - 46


    Original     		PDF MC80364K64 64Kx64 512Kbyte PBSRAM mosys GW 66 475 ci 94086 MC80364K64

    MoSys

    Abstract: MoSys 1T sram MoSys pcie verification for pci express "PCI Express" CHIP EXPRESS serdes ip vlsi design physical verification MoSys sram embedded
    Text: MoSys Announces Availability of 40nm PCI Express 2.0 PHY Proven Interoperability with Industry Standard PCI Express Controller from Denali Software Streamlines IO Sub-System Design SUNNYVALE, CA, November 2, 2009 — MoSys, Inc., a leading supplier of differentiated high


    Original     		PDF 11Gbps, MoSys MoSys 1T sram MoSys pcie verification for pci express "PCI Express" CHIP EXPRESS serdes ip vlsi design physical verification MoSys sram embedded

    et6000

    Abstract: n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221
    Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction


    Original     		PDF MD9000 ET6000 4816P-003-221/221 4100T 4816P-003 5M/N6010 n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    MoSys

    Abstract: MC805256K36
    Text: MC805256K36 9-Mbit: 256Kx36 MOSYS Overview The MoSys MC805256K36 is a high performance, low power symmetric pipelined-burst-SRAM SPSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC805256K36 is backward pin and function


    Original     		PDF MC805256K36 256Kx36 MC805256K36 64Kx36 128Kx36. 64Kx36, 128Kx36 256Kx36 MoSys

    MoSys

    Abstract: 64Kx32 MC804128K32 MC80464K32
    Text: MC80464K32, MC804128K32 64Kx32, 128Kx32 Flow-Through MOSYS tions buffers ì Power sensitive portable DSP applications _ 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 Pin PQFP 20 mm x 14 mm body


    Original     		PDF MC80464K32, MC804128K32 64Kx32, 128Kx32 MoSys 64Kx32 MC804128K32 MC80464K32

    DS08

    Abstract: MG802C512 MOSYS qfp 64 0.4 mm pitch land pattern
    Text: 1+' 9PXVE 0S[ 0EXIRG] ,MKL 4IVJSVQERGI MOSYS /\ 7+6%1 High bandwidth 100MHz-200MHz operation Reduced Latency - 13ns access, 25ns cycle Improved critical timing parameter limits 2/4 Internal Banks for hiding Row Precharge Full SGRAM protocol


    Original     		PDF 100MHz-200MHz 512Kx32 100-pin A10/BA1 DS08 MG802C512 MOSYS qfp 64 0.4 mm pitch land pattern

    MoSys

    Abstract: MC803128K32 pipeline burst
    Text: MC803128K32 128Kx32 Pipeline Burst SRAM MOSYS • High performance, low power pipeline burst SRAM Overview The MoSys MC803128K32 is a high performance, low power pipeline-burst-SRAM PBSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC803128K32 is


    Original     		PDF MC803128K32 128Kx32 MC803128K32 32Kx32 64Kx32 32Kx32, 64Kx32, MoSys pipeline burst

    DQ3225

    Abstract: dq24 DS12 PBSRAM 32KX32 DQ169
    Text: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67


    Original     		PDF MC803256K32, MC803256K36 256Kx32/36 DDQ3225 DQ3225 A17-2 DQ3225 dq24 DS12 PBSRAM 32KX32 DQ169

    DS13

    Abstract: MC804256K32L-15
    Text: MC804256K32, MC804256K36 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70


    Original     		PDF MC804256K32, MC804256K36 DS13 MC804256K32L-15

    ALLAYER COMMUNICATIONS

    Abstract: gvrp AL1022 "address learning" disable 802.3 802.1d port AL126 AL3000 AL300A 00XXX1
    Text: AL126 Revision 1.0 8-Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • • Supports eight 10/100 Mbit/s Ethernet ports with MII and RMII interface Capable of trunking up to 800 Mbit/s link with link fail-over Full- and half-duplex mode operation


    Original     		PDF AL126 AL1022 AL3000 ALLAYER COMMUNICATIONS gvrp AL1022 "address learning" disable 802.3 802.1d port AL126 AL300A 00XXX1

    IBM "embedded dram"

    Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
    Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of


    Original     		PDF conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys

    mosys sram embedded

    Abstract: CL018G M1T2HT18FE64E
    Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses


    Original     		PDF 32Kx64) M1T2HT18FE64E 64-Bit CL018G 3200um 2300um 32Kx64 M1T2HT18FE64E mosys sram embedded

    MoSys 1T sram

    Abstract: 64Kx32 CL018G M1T2HT18FE32E C-l018 "1t-sram"
    Text: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses


    Original     		PDF 64Kx32) M1T2HT18FE32E 32-Bit CL018G M1T2HT18FE32E 3200um MoSys 1T sram 64Kx32 C-l018 "1t-sram"

    16Kx32

    Abstract: TSMC 0.18um CL018G M1T1HT18FE64E
    Text: High Speed Flow-through 1-Mbit 16Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses


    Original     		PDF 16Kx32) M1T1HT18FE64E 64-Bit CL018G M1T1HT18FE64E 16Kx32 TSMC 0.18um

    M1T1HT25FL32

    Abstract: CL025G
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT25FL32 32-Bit CL025G M1T1HT25FL32

    "1t-sram"

    Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys
    Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		PDF 32Kx64) M1T2HT18FL64E 64-Bit CL018G M1T2HT18FL64E 2300um 32Kx64 3200um "1t-sram" TSMC 0.18um MoSys

    CL018G

    Abstract: M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FL32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		PDF 32Kx32) M1T1HT18FL32E 32-Bit CL018G M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters

    TSENG LABS

    Abstract: N6010
    Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN • Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets ■ Com pliant leads for thermal expansion P O U R N S ■ Miniaturized circuitry and packaging fo r space reduction


    OCR Scan     		PDF MD9000 ET6000 4816P-003-221/221 100ppm/ 150ppm/ 5M/N6010 TSENG LABS N6010

    PBSRAM

    Abstract: MC8031
    Text: M C80364K32, MC8031 28K32 6 4 K X 3 2 , 1 2 8 K X 3 2 PIPELINE BURST S R A M M o Sys 6 - - • High performance, low power pipeline burst SRAM


    OCR Scan     		PDF C80364K32, MC8031 28K32 83-133MHz 100-Pin PBSRAM

    mg802c256q

    Abstract: G802C256
    Text: <♦ M G802C256 Ultra Low Latency, High Performance M o Sys’ 256Kx32 SGRAM Preliminary Inform ation !g§|oooooooooo|f Features DQ3_1 VccQr-12 DQ4 : 3 DQ5c: 4 VSSQ- □ 5 DQ6! 13 DQ7i 17 VccQ! 18 DQ16:- y DQ17 J 1U VssQ! I 11 DQ18: 12


    OCR Scan     		PDF z-166M 256Kx32 00-pin G802C256 256Kx32 Page20 mg802c256q