hm65162c-5
Abstract: No abstract text available
Text: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C
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selec62
65162/Rev
hm65162c-5
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M65162
Abstract: t29 55v
Text: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
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HM-65162/883
HM-65162/883
100kHz
M65162
t29 55v
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Untitled
Abstract: No abstract text available
Text: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)
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F12-TM
65162/Rev
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Untitled
Abstract: No abstract text available
Text: 4bE D HARRIS SEMICON» SECTOR ÌH H U S E M I C O N D U C T O R U A R R IS • 43Q2271 0D3T1SG T W H A S H M - 6 5 1 6 2 'T -4 U j-Z .'5 - | 2 . . 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • Fast Access T im e. . 7<V90nsMax
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43Q2271
V90nsMax
HM-65162
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65162C
Abstract: 65162 HM-65162 B-2206
Text: HM 65162 MATRA MHS 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 × 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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HM-65162
90LCC
65162C
65162
B-2206
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MK48Z02
Abstract: M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP 24PIN CY7C128-45
Text: - 16 K X ¿&&ÍEH m % i t £t OC TAAC TCAC aax ns) (us) nMOS 'f S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) « TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN A M IDD aax (ibA)
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24PIN
Am9128-15
Aa9128-20
HM65728N-2
HM65728N-5
HY61C16-45
HY61C16-55
IIY61C16-70
HY61C16A-25
HY61C16A-35
MK48Z02
M58725P
HARRIS 7555
HM6116LP-3
HM65161-5
HM6116LP-2
MB8128
16116FP
CY7C128-45
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Untitled
Abstract: No abstract text available
Text: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.
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HM-65162
55/70/90ns
20/yA
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TS D É 4302271 0010714 b | T-4 6 -2 3 -12 HARRIS H M - 6 5 1 6 2 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts D IP • Fast Access Tim e. 55/70/90ns Max. T O P VIEW
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M302271
T-46-23-12
HM-65162
55/70/90ns
50/iA
20/uA
-550C
TAVWH1221-
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Untitled
Abstract: No abstract text available
Text: Tem ic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low pow er CM O S stalic RAM organized as 2048 x 8 bits. It is m anufactured using the M H S high perform ance CM O S technology. All inputs and outputs o f the H M -65I62 are TTL
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HM65162
-65I62
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8403602JA
Abstract: 8403606JA
Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max
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HM-65162
HM-65162
8403602JA
8403606JA
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PDF
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TRANSISTOR ww1
Abstract: ww1 47 transistor VW-F10 a05111
Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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hm65162
HM-65162
MIL-M-38510H
Sflbfl45b
0D074D5
00Q7431
TRANSISTOR ww1
ww1 47 transistor
VW-F10
a05111
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65162C
Abstract: 8403602JA 8403606JA
Text: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V
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HM-65162
65162C
8403602JA
8403606JA
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PDF
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HM6116LP-3
Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2
Text: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2
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HM6116FP-2
HM6116FP-3
HM6116FP-4
HM6116L-2
HM65728N-2
HM65728N-5
HY61C16-45
HY61C16-55
IIY61C16-70
HY61C16A-25
HM6116LP-3
HM6116LP-4
upd446
HM6116LP-2
Hitachi Scans-001
HM6116L-5
HM6116LP HM6116LP-2 HM6116LP-3
hm65161
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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HM65162
HM-65162
Sabfl45b
0D074D5
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HM-65162
Abstract: HM-65162-8 HM-65162B-8 HM-65162B-9 HM-65162C-8 HM-65162S-9
Text: a HM-65162 H a rris 2048 x 8 Asynchronous CMOS Static RAM Features P inouts DIP • Fast Access T im e . 5 5 /7 0 /9 0 n s Max. TO P VIEW • Low Standby C u rre n t. 50/jA M ax.
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HM-65162
55/70/90ns
50/jA
20//A
TAVWLi12'
HM-65162
HM-65162-8
HM-65162B-8
HM-65162B-9
HM-65162C-8
HM-65162S-9
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65162
Abstract: HM65162 HM-65162
Text: HM65162 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL compatible and operate from single 5 V supply thus
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HM65162
HM-65162
65162
HM65162
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65162 MATRA MHS 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are T IL
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HM-65162
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P-Channel Depletion-Mode
Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385
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2N5547JANTX
2N5547JANTXV
2N4856JAN
2N6660JANTX
2N4856JANTX
2N6660JANTXV
2N4856JANTXV
2N6661JAN
2N4857JAN
2N6661JANTX
P-Channel Depletion-Mode
MD80C31
JANTX2N4858
5962-9089101MEA
SI9110AK
JANTX2N6661
4Kx8 sram ttl
MGM TRANSFORMER
JANTX2N5114
janTXV2N5545
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pin diagram AMD FX 9590
Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Text: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic
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K29793
NZ21084
RS39191
pin diagram AMD FX 9590
Transistor AF 138
laser sharp measurement
d6406
pby 283 diode data book
SN74298
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PDF
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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