6563 Search Results

Frequency Generator 1MHz

Abstract: step recovery diode New England Microwave NE12003
Contextual Info: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high

ECN113

Contextual Info: ASP-65638- 03 NOTES: 1. FILL TO .160 [4.06] POST WITH T -1 S 1 5 -0 3 -S .0 7 0 2. SH EAR TA ILS TO DIMENSION SHOWN. 3. P A R T S TO BE PAC KAG ED IN TUBES. C O N T A C T A R E A 4. [1 .7 8 ] RE F R EP R E SE N TS A C RITIC A L DIMENSION. .1 6 0 [ 4 .0 6 |

6562C

Abstract: ZPD6563C UPD6562C D6562C 6563C
Contextual Info: N E C ELECTRONICS INC 75 6427525 N E C ELECTRONICS DEJ 1^57555 0001053 7 INC 72C 0 9 0 8 3 0 t-So-^b MOS DIGITAL INTEGRATED CIRCUITS ^ P D 6562C , / / P D 6563C CMOS M SI FOR CRYSTAL-CONTROLLED CLOCK SILICON COMPLEMENTARY MOS MONOLITHIC INTEGRATED CIRCUIT

MSM514221A

Abstract: m65631 mitsubishi mds
Contextual Info: MITSUBISHI ICs TV M 65631FP ADAPTIVE CHROMA NOISE REDUCER DESCRIPTION APPLICATION 65631FP is a semiconductor integrated circuitdesigned for VCR CNR (chroma noise reduction) of NTSC television signal. It consists of line memory, motion detector, encode circuit,

K 192 A transistor

Abstract: k 192 transistor SP2104 high speed small signal transistor Ft 1000Mhz buried zener
Contextual Info: SIPEX CORP bOE D • 6563711 00031=13 T7 T I SPX C i r \ û v SIGNAL PROCESSING EXCELLENCE SP2104 Analog Array FEATURES ■ Dielectric Isolation Dl for Minimum Parasitics and Optimum Latch-up Free Performance ■ 35 Volt or 20 Volt Process ■ 12 Tile Array Structure

Contextual Info: ASP-65630-02 NOTES: 1. 10 POSITIONS NOT STANDARD WITH - E J OPTION. 2. PARTS TO BE PACKAGED IN TUBES. 1 0 P O S x . 0 5 0 —3 ITEM S 2 & T E R M IN A L : S P R IN G T E M P E R P L A TIN G : PHOSPHOR BRONZE GOMTA G T ARFA.0 0 0 0 1 0 g o l d 'O V E R . 0 0 0 0 5 0 N IC K E L

Contextual Info: Crane Aerospace & Electronics Microwave Systems Solution DIGITALLY TUNED OSCILLATOR Model Number 6139-6563-00 • • • • Broadband, digital tuning Low post-tuning drift PTD Linear wideband FM modulation capability (Optional) Internal heater for frequency stability

MPS6560

Abstract: MPS6563 MPS6562 MPS6565 TA425 MPS 6561 MPS-6565
Contextual Info: MPS 6561 • MPS 6563 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656O, MPS656I NFN AND MPS6562, 6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

Contextual Info: THIRD ANGlE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE61030TZ 1 1 61230TZ 61530TZ 1 / 1 1 6183 TZ 1 1 62230TZ 1 1 62730 TZ f / 63330TZ 1 1 63930 TZ 1 1 64730TZ 1 65630TZ 1 / 66830TZ 1 1 68230 TZ 1 1 61040TZ 1 1 61240TZ 1 61540TZ 1 / 61840TZ 1 62240TZ

NE14201

Abstract: NE14202 NE14203 NE14204 NE14205 NE14206 NE14207 NE14208 NE14209
Contextual Info: 6563403 NEW ENGLAND MICROWAVE _ ' ' '66C 00085 bb DE | b S t i 3 4 0 3 OOOODflS fl | ~ N€W <ENGLmD MICROWme CORPORATION 2 6 H A M P S H IR E D R IV E , H U D S O N , N E W H A M P S H IR E 0 3 0 5 1 6 0 3 8 8 3 - 2 9 0 0 HIGH VOLTAGE P IN /N IP DIODES

MPS6563

Contextual Info: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , 6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

L0821

Abstract: SAFT MP DB8L wa8k catu IR71 b5757 256X16 TSOP50 acro eng
Contextual Info: KNo N & 5 7 5 7 /V O ,* 5 7 5 7 - J . - Z 02207 C M O S LSI LC382161AT-12/15 2m T655369-Vx 16t'jl>x2AV#i/2 ptXDRAIi l A*, jfc J ^ c jr «1« LC3B2161 A T ti, 65630 7 - H X lfl ^ -y V x 2A V ? to Ä « 3.3V # - « ¡MK i f tz ¿ DRAM)’0 * . 6 . M )i2CM 08:um ¿

Contextual Info: 6367251 MO T O R O L A SC MEMORY / AS I C j y T Q .R 0 L A S C iriE H O R Y /A S IC > * WlBmiïSÊBmâËSSÈItSfiB$$KE&RHsK!eBmiBmmam 65638 bM TZtt6 ~ 1 3 -/5 ' ° D E li7 3 b 7 2 S l M C M 0DbSâ3fl _) h 6 8 3 6 9 Advance Inform ation NMOS (N-CHANNEL, SILICON GATE)

ic TD 6204

Contextual Info: THIRD ANGLE PROJECTION ITEM CODE ECWF6103 6115 6123 6133 6153 61 6 3 6183 6203 6223 6243 6273 6303 6333 6363 6393 6433 6473 6 5 13 6563 6623 6683 6753 6823 6913 6 104 6 114 6 124 6134 6 154 6 164 6 184 6204 6224 6244 L L L L L L L L L L L L L L L L L L L L

MP 6154

Abstract: capacitor 103k 100v
Contextual Info: T H IR D ANGLE P R O JE C T IO N [ ITEM CODE E C Û E 6 103 F u e 123O F // 6 153 O F H 6183 O F H 6223 O F // 6273 O F // 6333 O F » 6393 0 F // 6 4 7 3 O F // 6563 O F // 6683 ()F // 6823 O F // 6 104 () F Il 6 124 ( )F // 6154 O F u 6184 O F // 6224 O F

N6113

Contextual Info: T H I R D ANGLE P R O J E C T IO N 1TE M CODE ECWF6 1 0 3 n 6113 ii 6 123 ii 6133 II 6153 II 6163 // 6 183 // 6203 // 6223 // 6243 // 6273 n 6303 // 6333 // 6363 // 6393 // 6433 // 6473 n 6513 // 6563 U 6623 n 6683 n 6753 H 6823 u 6913 // 6104 // 6114 // 6124

NE15003

Abstract: Sb3403 Limiter 100MHZ 20GHZ NE15001 NE15002 NE15004 NE15005 NE15006
Contextual Info: 6563403 NEW ENG LAN D ' M I C R0WÄVE ' D E |t,5 b 3 4 0 3 66C OODPDf lb 00086 D T •C ? r - / 5 ~ ' N€W 6riGLmD MICROWm€ CORPORATION 26 H A M P S H IR E DRIVE, H U D S O N , NEW H A M P S H IR E 030 51 603) 8 8 3 -2 9 0 0 LIMITER DIODES N E15000 The NE15000 Limiter Diodes are very thin base epitaxial silicon with gold doping to control lifetime.

NE11302

Abstract: 50MHZ NE11301 NE11303 NE11304 NE11305 NE11306 NE11307 NE11308 Cj451
Contextual Info: 6563403 NEW ENGLAND MICROWAVE 66 C 00088 bb D Ë J b 5 L ,3 4 0 3 D □□ □□ O fifl 7 ^ 0 7 - /^ 3 I MÇW dNGLhND NICROWm€ CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 30 VOLT SILICON TUNING VARACTORS N E11300 The N E 1 1 3 0 0 tuning varactors are silicon abrupt junction devices. They offer the highest Q and low­

Nd d7

Abstract: 700-0028
Contextual Info: NO DESCRIPTIO N DATE A A ADD MIS PART ND. 04.01,04' 177-706 — -□70-00028 P70-00028 — D70-00028 12,29,06' 12.0C.472 03,500C,138) A i s APPROV 6563952 Æ. f t p -p i n7n-nnn?o A .XXX AUDID ADAPTOR TITLE + 0 .2 UNIT DWG.NO. 5 5 - 0 0 9 8 ± 0.1 ÜL n n in )

CT 1975

Abstract: CT1975 ICAN-6166 ican6166 ST6112 rca cmos 4000 CD4000 ST-4174 NS-17 CMOS 4000B series rca
Contextual Info: ICAN-6563 Radiation Resistance of the COS/MOS CD4000A and CD4000B Series b y M . N . V in c o ff V p o ' 10 VO LT S. D O SA G E » C o6 0 G A M M A SO U R C E C om plem entary MOS COS/M OS in te­ grated circuits possess m any advantages which recom m end their use in radiation-susceptible

6562

Abstract: 20AWG 6563
Contextual Info: Model 6380, 6562, 6563, 6564 Female Mini-Connector “Do-It-Yourself” FEATURES: • Molded in contacts assure precision alignment • Matching thermocouple alloys reduce EMF • Channel design isolates wires for clear, strong signals • Make your own extension cables

fm modulation application circuit

Abstract: diagram 3 phase heater
Contextual Info: ISO 9001 Certified ARIZONA OPERATION DIGITALLY TUNED OSCILLATOR Model No. 6139-6563-00 • • • • Broadband, digital tuning Low post-tuning drift PTD Linear wideband FM modulation capability (Optional) Internal heater for frequency stability Frequency

LC321667CJ

Abstract: lc321667C 70n8
Contextual Info: > È £ 3 - KNüt N 5379A NO. 5379A 31497 -a -X 585379 f c é U A ^ -C < /£ á ít< \ ü CMOS LSI E D O 'S - y = E - H A-f f»9-f h L C 3 2 1 6 6 7 C J , C T -2 5 /3 0 ] " 6 5 5 3 6 7 - # m t 6 LC321667CJ, CTI±, 656367 - ¥ X 16kf V MU rôt <DGV# * , Ä3S, < £ ? s m s *

Contextual Info: iHIRD ANGLE PROJECTION ALTERATION I SS U E RATED ITEM CODE VOLTAGE ECQE61030T 630VDC / 1 1 1 61230T 1 / 61530T 1 / 61830T 1 / f / 1 1 62230T 1 1 1 62730T 1 1 / 1 63330T f / 1 1 63930T 1 1 f / 64730T H 65630T 1 1 1 / 1 66830T 1 1 f / 68230T 1 1 1 1 61040T 1