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    DDR2-400

    Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps/400Mbps (max.)


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    EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E PDF

    Untitled

    Abstract: No abstract text available
    Text: 1GB DDR2 667 VLP SDRAM UDIMM Part Number Bandwidth Speed Grade 78.01G9O.42K 5.3GB/sec Max CAS Frequency Latency 333MHz CL5 667Mbps Density Organization 1GB 128Mx64 Component Number of Composition Rank 128Mx8*8


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    01G9O 333MHz 667Mbps 128Mx64 128Mx8 PDF

    lpddr

    Abstract: FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT
    Text: RAM’s Power Consumption Comparison #1 „ Power Consumption: FCRAM vs. Equivalent Memories example Conditions: 256M-bit, BL=8, R:W=1:1, 4-bank interleave, 2.6GByte/s Power Consumption (mW) z z z z DDR2: 2pcs, x16, 667Mbps, CL=12pF, ODT=50ohm DDR1: 2pcs, x32, 333Mbps, CL=12pF


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    256M-bit, 667Mbps, 50ohm 333Mbps, 2008FUJITSU 800Mbps, lpddr FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT PDF

    MAX3920

    Abstract: No abstract text available
    Text: 19-1853; Rev 2; 12/02 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


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    10Gbps/10 622Mbps/667Mbps 900mW SONET/OC-192 SDH/STM-64 MAX3950EGK 622Mbps PD15SDI+ MAX3950 MAX3920 PDF

    bt 109

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5108AGBG 64M words x 8 bits Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks • Package: 60-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps (max.)


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    EDE5108AGBG 60-ball 667Mbps/533Mbps M01E0107 bt 109 PDF

    MAX3920

    Abstract: maxim 1999 circuit diagram MAX3940 MAX3950 MAX3950EGK MAX3925
    Text: 19-1853; Rev 0; 11/00 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


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    10Gbps/10 622Mbps/667Mbps 900mW SONET/OC-192 SDH/STM-64 MAX3950EGK 622Mbps PD15SDI+ 10x10x0 MAX3950 MAX3920 maxim 1999 circuit diagram MAX3940 MAX3950 MAX3950EGK MAX3925 PDF

    max3920

    Abstract: max3925
    Text: 19-1853; Rev 0; 11/00 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


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    MAX3950 10Gbps 16-bit 622Mbps 68-pin 900mW. 10Gbps/10 622Mbps/667Mbps 900mW max3920 max3925 PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


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    AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
    Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


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    EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0873E30 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820 PDF

    EBE10AD4AGFA-6E-E

    Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


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    EBE10AD4AGFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0865E11 EBE10AD4AGFA-6E-E DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11 PDF

    7809 voltage regulator datasheet

    Abstract: 7809 voltage regulator voltage regulator 7809 INL03991-02 7809 data sheet national semiconductor embedded system projects pdf free download toshiba web cam TB62705 ST 7809 voltage regulator excalibur Board
    Text: & News Views Second Quarter 2001 Newsletter for Altera Customers Altera Provides the Complete I/O Solution with the New APEX II Device Family Altera introduces the APEXTM II device family— flexible, high-performance, high-density programmable logic devices PLDs that deliver


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    624-megabit 7809 voltage regulator datasheet 7809 voltage regulator voltage regulator 7809 INL03991-02 7809 data sheet national semiconductor embedded system projects pdf free download toshiba web cam TB62705 ST 7809 voltage regulator excalibur Board PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


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    L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B PDF

    SGMII PCIE bridge

    Abstract: Scatter-Gather direct memory access SG-DMA TN1084 lvds serdes project wishbone rev. b
    Text: f u l l y t e s t e d a n d i n t e r o p e r a b l e Lattice PCIe Solutions Ready-to-Use PCIe Portfolio Lattice provides designers with low cost, low power, programmable solutions that are ready-to-use right out of the box. A suite of tested and interoperable solutions is available for PCI Express,


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    Interope/10b 1-800-LATTICE LatticeMico32, I0195C SGMII PCIE bridge Scatter-Gather direct memory access SG-DMA TN1084 lvds serdes project wishbone rev. b PDF

    Untitled

    Abstract: No abstract text available
    Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


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    AS4DDR232M64PBG 32Mx64 AS4DDR232M64PBG PDF

    DDR PHY ASIC

    Abstract: ddr ram memory ic CP-01024-1 FLEX10K DDR2-800
    Text: DesignCon 2007 Calibration Techniques for HighBandwidth Source-Synchronous Interfaces Manoj Roge, Altera Corporation Andy Bellis, Altera Corporation Phil Clarke, Altera Corporation Joseph Huang, Altera Corporation Mike Chu, Altera Corporation Yan Chong, Altera Corporation


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    CP-01024-1 DDR PHY ASIC ddr ram memory ic FLEX10K DDR2-800 PDF

    Untitled

    Abstract: No abstract text available
    Text: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.


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    K4C89093AF 288Mb 800Mbps 400Mhz) K4C89363AF-GC 8K/32ms 667Mbps/pin 333MHz, PDF

    qfn-44 PACKAGE footprint

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO


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    MAX3892 622Mbps 622MHz, MAX3892EVKIT MAX3892 mvp/id/3215/t/al 15-Nov-2010 qfn-44 PACKAGE footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.


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    K4C89183AF 288Mb 800Mbps 400Mhz) 8K/32ms 800Mbps/pin 400MHz, 667Mbps/pin 333MHz, PDF

    EDE5108AJSE-6E-E

    Abstract: EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  32M words × 4 bits × 4 banks (EDE5104AJSE)


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    EDE5104AJSE EDE5108AJSE EDE5116AJSE EDE5104AJSE) EDE5108AJSE) EDE5116AJSE) 60-ball EDE5104/08AJSE) 84-ball EDE5108AJSE-6E-E EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM PDF

    DDR2-667

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications Features • Density: 4GB • Organization ⎯ 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line


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    EBE41FE4ACFT 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1091E20 DDR2-667 PDF

    DDR2-667

    Abstract: EDE5108AJSE-6E-E E1088E20
    Text: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AJFT Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


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    EBE11FD8AJFT 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1088E20 DDR2-667 EDE5108AJSE-6E-E E1088E20 PDF

    DDR2-667

    Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18
    Text: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in


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    EBE11UD8AJUA 200-pin 800Mbps/667Mbps M01E0107 E1083E10 DDR2-667 DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18 PDF

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan
    16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H PDF