W5100
Abstract: MAG-JACK blink led blink
Text: W5100 LINKLED Usage This document is about W5100 LINKLED pin 66pin of W5100 operation. LED status is not related to the performance and function of W5100. 1. Description of W5100 LINK LED Operation - LINKLED of W5100 (66pin) operates active low. When network cable is connected, the signal
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W5100
66pin
W5100)
W5100.
W5100
66pin)
MAG-JACK
blink
led blink
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HDD16M64D8W
Abstract: No abstract text available
Text: HANBit HDD16M64D8W DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref., DIMM, Part No. HDD16M64D8W GENERAL DESCRIPTION The HANBiT HDD16M64D8W is 16M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT HDD16M64D8W consists of eight CMOS 16M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages
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HDD16M64D8W
128Mbyte
16Mx64bit)
on16Mx8
HDD16M64D8W
66pin
400mil)
184pin
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HDD64M72D18W
Abstract: No abstract text available
Text: HANBit HDD64M72D18W DDR SDRAM Module 512Mbyte 64Mx72bit , based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM Part No. HDD64M72D18W GENERAL DESCRIPTION The HDD64M72D18W is a 64M x 72 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eighteen CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages
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HDD64M72D18W
512Mbyte
64Mx72bit)
32Mx8,
184Pin-DIMM
HDD64M72D18W
66pin
400mil
184-pin
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diode Dq35-12
Abstract: HDD32M64F8
Text: HANBit HDD32M64F8 DDR SDRAM Module 256Mbyte 32Mx64bit , based on 32Mx8, 4Banks, 8K Ref., SMM, Part No. HDD32M64F8 GENERAL DESCRIPTION The HANBiT HDD32M64F8 is 32M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT HDD32M64F8 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil)
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HDD32M64F8
256Mbyte
32Mx64bit)
32Mx8,
HDD32M64F8
66pin
400mil)
200pin
diode Dq35-12
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HDD16M64B8
Abstract: No abstract text available
Text: HANBit HDD16M64B8 DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref. SO-DIMM Part No. HDD16M64B8 GENERAL DESCRIPTION The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
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HDD16M64B8
128Mbyte
16Mx64bit)
on16Mx8
HDD16M64B8
66pin
400mil
200-pin
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HDD16M64F8
Abstract: No abstract text available
Text: HANBit HDD16M64F8 DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref., SMM, Part No. HDD16M64F8 GENERAL DESCRIPTION The HDD16M64F8 is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
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HDD16M64F8
128Mbyte
16Mx64bit)
on16Mx8
HDD16M64F8
66pin
400mil
200-pin
HSD16M64F8L
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Untitled
Abstract: No abstract text available
Text: 66PIN PLASTIC TSOP II (400mil) detail of lead end 66 34 F G R P L S 1 E 33 A H I J S C D M N L S K M B NOTES 1. Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. 2. Dimension "A" does not include mold flash, protrusions or gate
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66PIN
400mil)
S66G5-65STIC
S66G5-65-9LG
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HDD32M64B8
Abstract: No abstract text available
Text: HANBit HDD32M64B8 DDR SDRAM Module 256Mbyte 32Mx64bit , based on32Mx8,4Banks, 8K Ref., SO-DIMM Part No. HDD32M64B8 GENERAL DESCRIPTION The HDD32M64B8 is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
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HDD32M64B8
256Mbyte
32Mx64bit)
on32Mx8
HDD32M64B8
66pin
400mil
200-pin
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HDD32M64F8K
Abstract: HSD32M64F8K
Text: HANBit HDD32M64F8K DDR SDRAM Module 256Mbyte 32Mx64bit , based on16Mx8,4Banks, 4K Ref., SMM, Part No. HDD32M64F8K GENERAL DESCRIPTION The HDD32M64F8K is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
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HDD32M64F8K
256Mbyte
32Mx64bit)
on16Mx8
HDD32M64F8K
66pin
400mil
200-pin
HSD32M64F8K
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OV5653
Abstract: image sensor omnivision response ov05653 OV56 90fps omnivision 1.3 Megapixel camera module 16-zone OV565 OmniVision 5 megapixel
Text: OV5653 5-megapixel product brief lead free available in a lead-free package Industry-Leading Still Image Capture and 1080p Full HD Digital Video The OV5653 is OmniVision's high-performance 5-megapixel imaging solution for digital still camera DSC and digital
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OV5653
1080p
image sensor omnivision response
ov05653
OV56
90fps
omnivision
1.3 Megapixel camera module
16-zone
OV565
OmniVision 5 megapixel
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W9425G6JH
Abstract: No abstract text available
Text: W9425G6JH 4 M 4 BANKS 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W9425G6JH
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M368L1624DTL
Abstract: No abstract text available
Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1624DTL
184pin
128MB
16Mx64
16Mx16
64-bit
M368L1624DTL
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DDR266
Abstract: No abstract text available
Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.
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DDR200
Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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IBMN612404GT3B
IBMN612804GT3B
128Mb
DDR266A
DDR266B
DDR200
06K0566
F39350B
DDR200
DDR266A
DDR266B
IBMN612404GT3B
IBMN612804GT3B
IBMN62540
IBMN62580
128MB PC266
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8
Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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NT5DS8M16FT
NT5DS8M16FS
128Mb
NT5DS8M16FS-5T
NT5DS8M16FS-6K
NT5DS8
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NT5TU32M16AG-37B
Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8
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NT5TU128M4AB/NT5TU128M4AE
NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE
NT5TU32M16AF/NT5TU32M16AG
/NT5TU32M16AS
512Mb
NT5TU32M16AG-37B
NT5TU128M4AE
nt5tu64m8
nt5tu64m
NT5TU32M16
NT5T
nt5tu32m16ag
nt5tu64m8af
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Nanya nt5ds8m16fs
Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8
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NT5DS8M16FT-5TI
NT5DS8M16FS-5TI
NT5DS8M16FT-6KI
NT5DS8M16FS-6KI
128Mb
Nanya nt5ds8m16fs
NT5DS8M16FS
NT5DS8M16FT-5TI
NT5DS8M16FS-5T
DDR333
DDR400
NT5DS8M16
NT5DS8M16FT-6KI
NT5DS8M16FT
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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NT5DS8M16FT
NT5DS8M16FS
128Mb
NT5DS8M16FS-5T
NT5DS8M16FS-6K
NT5DS8M16
NT5DS8M16FS
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XM28C010P
Abstract: No abstract text available
Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times
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XM28C010P
--150ns,
120ns,
Size--64
XM28C010P
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NT5DS16M16BF-6K
Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions
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NT5DS64M4BT
NT5DS32M8BT
NT5DS16M16BT
NT5DS64M4BF
NT5DS32M8BF
NT5DS16M16BF
NT5DS64M4BS
NT5DS32M8BS
NT5DS16M16BS
NT5DS64M4BG
NT5DS16M16BF-6K
NT5DS32M8BT
NT5DS16M16BT-6K
NT5DS16M16BT
NT5DS64M4BT
NT5DS32M
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Untitled
Abstract: No abstract text available
Text: M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M381L6423DTL
184pin
512MB
64Mx72
32Mx72
32Mx8
72-bit
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M368L6523DUS
Abstract: L2923D
Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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256MB,
512MB,
184pin
512Mb
64/72-bit
64Mx8
K4H510838D-U*
M368L6523DUS
L2923D
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E3235
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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OCR Scan
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TC59WM815/07/03BFT-70
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDSX4BANKSX4-BITS
TC59WM815BFT
TC59WM807BFT
TC59WM803BFT
E3235
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lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
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