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    6800MA Price and Stock

    Eaton Bussmann BK-S506-800MA

    FUSE GLASS 800MA 250VAC 5X20MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BK-S506-800MA Bulk
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    Eaton Bussmann S506-800MA

    Fuse, Antisurge, 800Ma; Blow Characteristic:Time Delay; Fuse Current:800Ma; Voltage Rating Vac:250V; Fuse Size Metric:5Mm X 20Mm; Fuse Size Imperial:-; Product Range:S506 Series; Breaking Capacity Current Ac:35A; Svhc:No Svhc Rohs Compliant: Yes |Eaton Bussmann S506-800MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark S506-800MA Bulk 1,700 10
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    • 10 $0.223
    • 100 $0.198
    • 1000 $0.183
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    Eaton Bussmann S506-800MA-R

    S506 800Ma Buss Fuse/ Bulk Rohs Compliant: Yes |Eaton Bussmann S506-800MA-R
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    Newark S506-800MA-R Bulk 5
    • 1 $5.55
    • 10 $5.22
    • 100 $3.84
    • 1000 $3.25
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    6800MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NR10050

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3


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    PDF NR10050T3R8N 7300mA, 6800mA 500pcs 100kHz 7300mA 26MHz NR10050

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    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3


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    PDF NR10050T3R8N 7300mA, 6800mA 500pcs 100kHz 7300mA 26MHz

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM4450-25F -46dBc FLM4450-25F

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM3742-25F -46dBc FLM3742-25F

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM5359-25F -46dBc FLM5359-25F Pow4888

    Untitled

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W


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    PDF FLM5359-25F -46dBc FLM5359-25F FCSI0499M200

    FLM4450-25F

    Abstract: No abstract text available
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W


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    PDF FLM4450-25F -46dBc FLM4450-25F FCSI0499M200

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM5359-25F -46dBc FLM5359-25F FCSI0499M200

    CGR18650hm

    Abstract: CR2032 panasonic MSDS MH12210 li-ion CGR18650 MH12210 CGR18650 ce bp-748264 GP AA alkaline battery panasonic 18650 BP-5511c4
    Text: Chemistry Home Products ISO Sales Offices Production Environment Alkaline Lithium Lithium Ion Nickel Cadmium Nickel Metal Hydride Sealed Lead-Acid Lead Acid VRLA Modular Other Products MSDS About Us Search by Model Number Alkaline Home Products ISO Sales Offices


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5053-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm


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    PDF FLM5053-25F -46dBc 50ohm FLM5053-25F 25deg

    BPL40-12

    Abstract: No abstract text available
    Text: Maintenance-Free Rechargeable Sealed Lead-Acid Battery BPL40-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can use in any direction and position


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    PDF BPL40-12 2000mA 50volts) 3800mA BPL40-12

    Untitled

    Abstract: No abstract text available
    Text: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM3439-25F -46dBc FLM3439-25F

    ik 937

    Abstract: FET 4900 FLM4450-25F 3485 fujitsu
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM4450-25F -46dBc FLM4450-25F ik 937 FET 4900 3485 fujitsu

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


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    PDF FLM4450-25F -46dBc 50ohm FLM4450-25F 25deg

    FLM5053-25F

    Abstract: No abstract text available
    Text: FLM5053-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50Ω


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    PDF FLM5053-25F -46dBc FLM5053-25F Pow4888

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz


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    PDF FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm


    OCR Scan
    PDF FLM4450-25F -46dBc FLM4450-25F FCSI0499M200

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    PDF FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • • • • • High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 39% (Typ.) Low IM 3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q


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    PDF -46dBc FLM5359-25F FLM5359-25F FCSI0499M200

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan
    PDF FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


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    PDF FLM3742-25F -46dBc 3742-25F FCSI0499M200

    Untitled

    Abstract: No abstract text available
    Text: FLM 6472-25DA Internally M a tch ed Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 93.7 w °C °C Limit Typ. Max. Unit Total Power Dissipation


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    PDF 6472-25DA

    FLM3742-25DA

    Abstract: No abstract text available
    Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan
    PDF FLM3742-25DA 44dBm -45dBc 32dBm FLM3742-25DA

    FLM4450-25DA

    Abstract: FLM4450-25D
    Text: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan
    PDF FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D