NR10050
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3
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NR10050T3R8N
7300mA,
6800mA
500pcs
100kHz
7300mA
26MHz
NR10050
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3
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NR10050T3R8N
7300mA,
6800mA
500pcs
100kHz
7300mA
26MHz
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Untitled
Abstract: No abstract text available
Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω
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FLM4450-25F
-46dBc
FLM4450-25F
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Untitled
Abstract: No abstract text available
Text: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM3742-25F
-46dBc
FLM3742-25F
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FLM5359-25F
Abstract: No abstract text available
Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM5359-25F
-46dBc
FLM5359-25F
Pow4888
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Untitled
Abstract: No abstract text available
Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W
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FLM5359-25F
-46dBc
FLM5359-25F
FCSI0499M200
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FLM4450-25F
Abstract: No abstract text available
Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W
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FLM4450-25F
-46dBc
FLM4450-25F
FCSI0499M200
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FLM5359-25F
Abstract: No abstract text available
Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM5359-25F
-46dBc
FLM5359-25F
FCSI0499M200
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CGR18650hm
Abstract: CR2032 panasonic MSDS MH12210 li-ion CGR18650 MH12210 CGR18650 ce bp-748264 GP AA alkaline battery panasonic 18650 BP-5511c4
Text: Chemistry Home Products ISO Sales Offices Production Environment Alkaline Lithium Lithium Ion Nickel Cadmium Nickel Metal Hydride Sealed Lead-Acid Lead Acid VRLA Modular Other Products MSDS About Us Search by Model Number Alkaline Home Products ISO Sales Offices
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Untitled
Abstract: No abstract text available
Text: FLM5053-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5053-25F
-46dBc
50ohm
FLM5053-25F
25deg
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BPL40-12
Abstract: No abstract text available
Text: Maintenance-Free Rechargeable Sealed Lead-Acid Battery BPL40-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can use in any direction and position
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BPL40-12
2000mA
50volts)
3800mA
BPL40-12
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Untitled
Abstract: No abstract text available
Text: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM3439-25F
-46dBc
FLM3439-25F
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ik 937
Abstract: FET 4900 FLM4450-25F 3485 fujitsu
Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω
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FLM4450-25F
-46dBc
FLM4450-25F
ik 937
FET 4900
3485 fujitsu
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Untitled
Abstract: No abstract text available
Text: FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm
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FLM4450-25F
-46dBc
50ohm
FLM4450-25F
25deg
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FLM5053-25F
Abstract: No abstract text available
Text: FLM5053-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50Ω
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FLM5053-25F
-46dBc
FLM5053-25F
Pow4888
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Untitled
Abstract: No abstract text available
Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-25DA
UJ11jU
44dBm
-45dBc
32dBm
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Untitled
Abstract: No abstract text available
Text: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm
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FLM4450-25F
-46dBc
FLM4450-25F
FCSI0499M200
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FLM4450-25D
Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
FUJI GaAs FET
25Q 328
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FLM5359-25F
Abstract: No abstract text available
Text: FLM5359-25F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • • • • • High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 39% (Typ.) Low IM 3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q
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-46dBc
FLM5359-25F
FLM5359-25F
FCSI0499M200
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Untitled
Abstract: No abstract text available
Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q
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FLM5964-25DA
UJ11bU
44dBm
-45dBc
32dBm
5964-25D
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Untitled
Abstract: No abstract text available
Text: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-25F
-46dBc
3742-25F
FCSI0499M200
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Untitled
Abstract: No abstract text available
Text: FLM 6472-25DA Internally M a tch ed Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 93.7 w °C °C Limit Typ. Max. Unit Total Power Dissipation
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6472-25DA
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FLM3742-25DA
Abstract: No abstract text available
Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-25DA
44dBm
-45dBc
32dBm
FLM3742-25DA
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FLM4450-25DA
Abstract: FLM4450-25D
Text: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
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