Untitled
Abstract: No abstract text available
Text: Data Sheet PT7C5509 series Crystal Oscillator Module ICs |
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PT7C5509
PT7C5509ALx
PT0232
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 MOLD LED LAMP L850-09LH Opto-Device & Custom LED L850-09LH LN850-09LH Oval type Infrared LED L850-09LH is composed of rectangular AlGaAs die and is mounted on a lead frame with a clear oval type epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 850nm.
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L850-09LH
LN850-09LH)
L850-09LH
850nm.
680umx240um
850nm
100mA,
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Untitled
Abstract: No abstract text available
Text: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size
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OPD0606
150um
680um
680um
000Lux
2856k.
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839 DIODE
Abstract: PIN PHOTO DIODE OPD0606 068mm DIODE 839
Text: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size
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OPD0606
150um
680um
680um
000Lux
2856k.
839 DIODE
PIN PHOTO DIODE
068mm
DIODE 839
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L850-06LH
Abstract: 850nm
Text: epitex Φ5 MOLD LED LAMP L850-06LH Opto-Device & Custom LED L850-06LH LN850-06LH Infrared LED Lamp L850-06LH is composed of rectangular AlGaAs die and is mounted on a lead frame with a clear unspherical epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 850nm.
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L850-06LH
LN850-06LH)
L850-06LH
850nm.
680umx240um
850nm
100mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet PT7C5009 series |
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PT7C5009
PT7C5009AL
PT0194
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PT7C5009 series |
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PT7C5009
PT7C5009AL
PT0194
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PDF
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