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    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    km68512lg

    Abstract: ob2535 cs250 KM68512LT 10MW KM6651
    Text: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion


    OCR Scan     		PDF KM68512Ã 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512UL-L 288-bit KM68512L/L-L km68512lg ob2535 cs250 KM68512LT 10MW KM6651