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    68B1002 Search Results

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    68B1002 Price and Stock

    Samsung Semiconductor KM68B1002-12TD

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    Bristol Electronics KM68B1002-12TD 1,062
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    Samsung Semiconductor KM68B1002J-12

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    Bristol Electronics KM68B1002J-12 772
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    Chip 1 Exchange KM68B1002J-12 102
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    TT electronics / BI Technologies 668-B-1002D

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    Bristol Electronics 668-B-1002D 56
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    TT electronics / BI Technologies 668-B-1002F

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    Bristol Electronics 668-B-1002F 9
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    Samsung Semiconductor KM68B1002J-10

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    Bristol Electronics KM68B1002J-10 2
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    Chip 1 Exchange KM68B1002J-10 325
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    68B1002 Datasheets Context Search

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    68B1002J-12

    Abstract: No abstract text available
    Text: fÇ? SAMSUNG 68B1002 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES T h l K M 68B1002 is a 1 ,048,576-bit high­ speed static random access m em ory o r­ ganized as 131,072 words by 8 bit. T he K M 68B1002 uses eight com m on input and output lines and has an output enable pin


    OCR Scan     		PDF KM68B1002 68B1002 576-bit 400mil 32-pin 68B1002J-12

    68B10

    Abstract: KM688 KM68B1002-8
    Text: 68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)


    OCR Scan     		PDF KM68B1002 68B1002J-8 68B1002J-9 68B1002J-10 68B1002J-12 68B1002J-15 KM68B1002J 32-SOJ-400 576-bit 68B10 KM688 KM68B1002-8

    A400M

    Abstract: No abstract text available
    Text: 68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)


    OCR Scan     		PDF KM68B1002 68B1002J-8 68B1002J-9 68B1002J-10 KM68B1002J-12 155mA KM68B1002J-15 145mA KM68B1002J: 32-Pin A400M

    KM68B1002J-10

    Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
    Text: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM 68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		PDF KM68B1002 KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10: 165mA KM68B1002J-12: 155mA KM68B1002J-15 KM68B1002J-10 KM68B1002J-12

    68B10

    Abstract: No abstract text available
    Text: PRELIMINARY 68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 10, 12ns m ax. • Low P o w er D issipation Standby (TTL) : 60m A (m ax.) (C M O S): 10m A (m ax.) O p eratin g K M 68B 1002J-10: 160m A (m ax.)


    OCR Scan     		PDF KM68B1002 1002J-10: 1002J: 68B10

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    KM68B1002J-10

    Abstract: KM68B1002J-12 KM68B1002J-15 KM68B1002J-8 68B10 KM68B1002-15
    Text: BiCMOS SRAM 68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The 68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The 68B1002 uses eight common input and output lines and has an output enable pin which operates


    OCR Scan     		PDF KM68B1002 128Kx8 KM68B1002J-8 175mA KM68B1002J-10: KM68B1002J-12: KM68B1002J-15: KM68B1002J 32-SOJ-400 KM68B1002 KM68B1002J-10 KM68B1002J-12 KM68B1002J-15 KM68B1002J-8 68B10 KM68B1002-15