20L08
Abstract: No abstract text available
Text: 69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM 69B257AJ-8:185m A (Max.)
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KM69B257A
110mA
69B257AJ-8
KM69B257A
185mA
KM69B257AJ-10:
175mA
KM69B257AJ-12:
165mA
KM69B257AJ:
20L08
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LM 739 N
Abstract: No abstract text available
Text: PRELIMINARY 69B257 BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times — Com mercial: 10ns, 12ns, 15ns, 20ns — 5ns & 6ns Output Enable tim es • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 155m A, 130mA
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KM69B257
130mA
69B257
LM 739 N
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Untitled
Abstract: No abstract text available
Text: SA MS UN G E L E C T R O N I C S INC b?E » • 7 T b 4 1 4 2 D L 1 7 bl b 1ÔS 69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.)
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KM69B257A
110mA
69B257AJ-8
KM69B
257AJ-9
KM69B257AJ-10
175mA
69B257AJ-12
KM69B257AJ:
32-pin
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