Untitled
Abstract: No abstract text available
Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)
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2SD2633
100max
10max
150min
2000min
O220F
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2SC4296
Abstract: No abstract text available
Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max
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2SC4296
Pulse20)
400min
10typ
85typ
100max
FM100
2SC4296
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PDF
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2SD2633
Abstract: 84AB 2sd26
Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)
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2SD2633
100max
10max
150min
2000min
O220F
2SD2633
84AB
2sd26
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PDF
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2SC4296
Abstract: No abstract text available
Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max
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2SC4296
Pulse20)
400min
10typ
85typ
100max
FM100
2SC4296
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PDF
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1014-6A
Abstract: No abstract text available
Text: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed
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014-6A
014-6A
1014-6A
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schematic atx 250
Abstract: computer mother board circuit diagram I740 IRU1160 IRU1160CM IRU1160CP
Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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PD94130
IRU1160
IRU1160
O-263
schematic atx 250
computer mother board circuit diagram
I740
IRU1160CM
IRU1160CP
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PDF
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I740
Abstract: IRU1160 IRU1160CM IRU1160CP
Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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PD94130
IRU1160
IRU1160
RegulRU1160
O-263
1358C.
I740
IRU1160CM
IRU1160CP
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PDF
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2SC5370
Abstract: FM20
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
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PDF
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2SD2389 power transistor
Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS
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2SD2389
-160V;
2SD2389 power transistor
2SD2389
audio Darlington 6A
2SB1559
transistor 2SB1559
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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Original
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PD94130
IRU1160
IRU1160
O-263
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PDF
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2SC5370
Abstract: FM20 2402 transistor
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
2402 transistor
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PDF
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BAT54A
Abstract: MAX1945 MAX1945R MAX1945REUI MAX1945S MAX1945SEUI
Text: 19-2640; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA 1MHz, 1% Accurate, 6A Internal Switch Step-Down Regulators Applications Features ♦ 6A PWM Step-Down Regulator with 95% Efficiency ♦ 1MHz/500kHz Switching for Small External Components ♦ 0.76in2 Complete 6A Regulator Footprint
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1MHz/500kHz
76in2
MAX1945R)
MAX1945S)
180-Degree
MAX1945R/MAX1945S
BAT54A
MAX1945
MAX1945R
MAX1945REUI
MAX1945S
MAX1945SEUI
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PDF
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atx 2.03 power supply schematic dc
Abstract: I740 IRU1160 IRU1160CM IRU1160CP
Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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Original
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PD94130
IRU1160
IRU1160
O-263
atx 2.03 power supply schematic dc
I740
IRU1160CM
IRU1160CP
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PDF
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2SB1254
Abstract: 2SD1894
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS
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2SD1894
-160V;
-140V;
2SB1254
2SD1894
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PDF
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Untitled
Abstract: No abstract text available
Text: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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Original
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APU1160
APU1160
O-263
1358C.
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PDF
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APU1160
Abstract: APU1160S I740 regulator 5a 28v
Text: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that
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Original
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APU1160
APU1160
O-263
1358C.
APU1160S
I740
regulator 5a 28v
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A pulsed * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with
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ZTX718
ZTX618
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53-06A
Abstract: 2n5306 2N5305
Text: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are
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OCR Scan
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3fl75Dfll
OG17c
2N5305,
GES5305,
S-42S27
10--Typical
53-06A
2n5306
2N5305
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PDF
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2N5305
Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
Text: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are
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OCR Scan
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a017c
2N5305,
GES5305,
92CS-42S2T
92CS-42626
2N5305
"to-98" package
2N5306 to-98
2N5306
2N5306 equivalent
GES5305
2N5306A
GES5306
GES5306A
TO-98
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PDF
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pnp 1500v 8a
Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Text: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV
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OCR Scan
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1S00V
2SD1543
2SD1544
2SD1553
2SD1554
2SD2089
2SD1545
2SD1546
2SD2498
2SD1547
pnp 1500v 8a
fr120
2SD1548
2SD2253
2SC4352
2sc5027
2SC2706
2SD2499
2sc4544
diode 6a 250v
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PDF
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vp1210n5
Abstract: VP1204N2
Text: yjßSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package If ^DS ON BVdgs -40V (max) 0.8Q -60V 0.8£i -100V 0.8£i -6A DICEt TO-39 TO-220 -6A VP1204N2 VP1204N5 VP1204ND -6A VP1206N2
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OCR Scan
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VP1204N2
VP1206N2
VP1210N2
O-220
VP1204N5
VP1206N5
VP1210N5
VP1204ND
VP1206ND
VP1210ND
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PDF
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Kvp 26A
Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Text: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000
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OCR Scan
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
Kvp 26A
kvp 3a
kvp 42 DIODE
kvp 34 DIODE
100-200KV
kvp diode
kvp 68A
hv rectifiers diode
kvp 26 DIODE
8ph ZENER
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PDF
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si 13001
Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm
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OCR Scan
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ENN6662
2SB633P
2SD613P
2SD613P]
O-220
si 13001
transistors 13001
513P
HA 13001
LB 13001
TA-3082
SB633
IC HA 13001
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PDF
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si 13001
Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC
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OCR Scan
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ENN6662
2SB633P
2SD613P
2SB633P
2SD613P]
O-220
IT02147
IT02149
SB633
si 13001
transistors 13001
13001 PNP
513P
13001 npn
613P
533P
ENN6662
sd613
si 13001 transistor
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PDF
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