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    th 2267

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


    OCR Scan     		3906S 100mA 3904S Q62702-A1202 OT-363 flE35b05 Q1225S2 th 2267 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l


    OCR Scan     		fl23SbOS G0273b3 LD273 BP104 BP103B 6E3Sb05 Oe07D80 PDF

    smd transistor hA

    Abstract: BTS 131 SMD S5305 SIEMENS BST smd code t04 transistor SMD t04 410D 410E 410F BTS410
    Text: SIEMENS BTS410D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v


    OCR Scan     		BTS410D T0220AB/5 BTS410 C67078-S5305-A3 E3040 C67078-S5305-A7 E3043 C67078-S5305-A20 smd transistor hA BTS 131 SMD S5305 SIEMENS BST smd code t04 transistor SMD t04 410D 410E 410F PDF