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    6MBP50RA060 Search Results

    6MBP50RA060 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6MBP50RA060 Fuji Electric R-IPM series - Intelligent Power Modules Original PDF
    6MBP50RA060 Fuji Electric IGBT-IPM(600V/50A) Scan PDF

    6MBP50RA060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6MBP50RA060

    Abstract: 555 ic
    Text: 6MBP50RA060 600V / 50A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 6MBP50RA060 6MBP50RA060 555 ic

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original     		PDF REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    6mbp50rta060

    Abstract: 7mbp50rta060 7MBP50RtA060 01 6mbp20rta060 7MBP150RTA060 6mbp50rta 6MBP150RTA060 6MBP50RA-120 6mbp80rtb060 7MBP75RA120
    Text: IGBT-IPM Quick Selection Guide Nov-01 * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series package * High performance and higi reliability IGBT with overheating protection


    Original     		PDF Nov-01 00V/1200V 6MBP15RH060 6MBP20RH060 6MBP25RA120 6MBP50RA060 7MBP50RA060 6MBP50RA120 7MBP50RA120 6MBP75RA060 6mbp50rta060 7mbp50rta060 7MBP50RtA060 01 6mbp20rta060 7MBP150RTA060 6mbp50rta 6MBP150RTA060 6MBP50RA-120 6mbp80rtb060 7MBP75RA120

    p617

    Abstract: P610 6MBP15RA120 p612 7MBP50RA060 6MBP50RA-120 6MBP15RH060 p611 P619 MJYS-QKJL-75/440
    Text: パワーデバイス / Power Devices IGBT • R-IPMシリーズ R-IPM series （Intelligent Power Modules） 600Vクラス オールシリコン形 IPM 600 volts class/All-silicon IPM 形 式 Device type VDC Max. Volts 6MBP15RH060 450 6MBP20RH060 450


    Original     		PDF IPM600 6MBP15RH060 6MBP20RH060 6MBP30RH060 6MBP50RA060 6MBP75RA060 6MBP100RA060 6MBP150RA060 6MBP200RA060 6MBP300RA060 p617 P610 6MBP15RA120 p612 7MBP50RA060 6MBP50RA-120 6MBP15RH060 p611 P619 MJYS-QKJL-75/440

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120

    zener DIODE A112

    Abstract: DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR
    Text: FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL 1 REH983 CONTENTS Chapter 1 Features 1.1 IGBT-IPM Characteristics. 3 1.2 R-IPM Characteristics. 4


    Original     		PDF REH983 zener DIODE A112 DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR

    6MBP50RA060

    Abstract: IGBT FF 450
    Text: IGBT-IPM 14# Jl IP M - N v 6 0 0 V /5 0 A /6 in one-package R series 6MBP50RA060 Features U - X 1 0 & i / <7 'T — IG BT^ -j -f<r>T\ J: 5 S & fH ig g ll# t « IH f i t t r o H S Low power loss and soft switching Compatible with existing IPM-N series packages


    OCR Scan     		PDF 00V/50A/6 6MBP50RA060 Ede-300V is-30 SE3A71E 6MBP50RA060 IGBT FF 450

    fuji IGBT

    Abstract: 6mbp50r
    Text: FUJI 2 7 D ? y h FUJI NEW SEMICONDUCTOR PRODUCTS IG B T -IP M 14# H 6MBP50RA060 h X < 7 51 > 7 IPM-N '> i; - X 7 R s e r ie s Features fé ílífc t V 7 IG B T ^ 6 0 0 V /5 0 A /6 in one-package 1 !§B'I4 7 & v 7<7)Tj J: 5 K B fM tg E iS ;£ i:l 5 í s 3 £ 1 4 0 ) Ü í i


    OCR Scan     		PDF 6MBP50RA060 1997-0H3OFIS fuji IGBT 6mbp50r

    6MBP50RA060

    Abstract: No abstract text available
    Text: 6 0 0 V /5 0 A /6 in one-package I G B • # T - M: I P M R 6MBP50RA060 s e r i e s Features t v 7 h t . < "j * > n • • iG B T f - -7 y m j • Low power loss and soft switching • Compatible with existing IPM-N series packages • High performance and high reliability IGBT with overheating protection


    OCR Scan     		PDF 00V/50A/6 6MBP50RA060 Edc-300V Tj-125 6MBP50RA060

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    6mbi100p

    Abstract: 6MBI75PC-12Q 6MBI100PC-120 6mbp50r
    Text: /\°7 —t V W * / Power Devices QQQN0~7^ : t —-/UvUia >ffi2lPM 600volts class/AII-Silicon IPM * *V A V Voc »• « IGBT-IPM R se rie s Intelligent Power Modules H i ■ IGBT-IPM R v U —X Device type Vccs lc Com. Amps. tc Cant. Amps. [IGBT+FWD] ; 1 M $


    OCR Scan     		PDF 600volts Page72 Page67-71 6mbi100p 6MBI75PC-12Q 6MBI100PC-120 6mbp50r

    p610

    Abstract: 6MBP20RY060 7MBP75RA120 collmer igbt 6mbp15rh-060 6mbp25ra 6mbp15r 6mbp50r 7MBP150RA120 p616
    Text: FOURTH GENERATION IGBT 600 VOLT, R -SER IES INTELLIGENT POWER MODULES, PT TECHNOLOGY • 50 - 300 Amp * "RH"devices are 0-20kHz operation, "RY" devices are up to 3kHz operation Device Type 6MBP15RH-060* 6MBP15RY-060* 6MBP20RH-060* 6MBP20RY-060* V dc Max. Volts


    OCR Scan     		PDF 0-20kHz 6MBP15RH-060* 6MBP15RY-060* 6MBP20RH-060* 6MBP20RY-060* 6MBP30RH-060* 6MBP30RY-060* 6MBP50RA-060 6MBP75RA-060 6MBP100RA-060 p610 6MBP20RY060 7MBP75RA120 collmer igbt 6mbp15rh-060 6mbp25ra 6mbp15r 6mbp50r 7MBP150RA120 p616