6N100 Search Results
6N100 Price and Stock
Vishay Intertechnologies T6N100CAHM3/H- Tape and Reel (Alt: T6N100CAHM3/H) |
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T6N100CAHM3/H | Reel | 7 Weeks | 10,500 |
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Vishay Intertechnologies T6N100CAHM3/I- Tape and Reel (Alt: T6N100CAHM3/I) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T6N100CAHM3/I | Reel | 7 Weeks | 14,000 |
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T6N100CAHM3/I | 13,950 |
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T6N100CAHM3/I | Cut Tape | 14,000 | 5 |
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Renesas Electronics Corporation R5F72866N100FA#U2SH7286 768kF32kRAM176pin-0.4mm -20to+85 - Trays (Alt: R5F72866N100FA#U2) |
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R5F72866N100FA#U2 | Tray | 12 Weeks | 40 |
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CTS Corporation 526N10025CTRTemperature Compensated Crystal Oscillator (TCXO) 10MHz ?2.5ppm HCMOS 4-Pin CSMD T/R - Tape and Reel (Alt: 526N10025CTR) |
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526N10025CTR | Reel | 10 Weeks | 3,000 |
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Renesas Electronics Corporation R5F72856N100FP#U2MCU 32-bit SuperH RISC 768KB Flash 3.3V/5V 144-Pin LQFP Tray - Trays (Alt: R5F72856N100FP#U2) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R5F72856N100FP#U2 | Tray | 12 Weeks | 60 |
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6N100 Datasheets (13)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
PDF Size |
Page count |
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6N100F |
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Power MOSFETs | Original | 837.51KB | 4 | |||
6N100W-1 | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-10 | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-10F | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-1M | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-20M | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-3 | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-30 | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-30F | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-3F | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-40F | Inmet | ATTENUATOR | Scan | 357.2KB | 1 | |||
6N100W-6 | Inmet | ATTENUATOR | Scan | 550.71KB | 1 | |||
6N100W-6M | Inmet | ATTENUATOR | Scan | 550.71KB | 1 |
6N100 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 1000 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1000 V V GS Continuous ±20 V V GSM Transient |
OCR Scan |
6N100Q O-268 | |
6N60E
Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
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OCR Scan |
O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E | |
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM |
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6N100Q 6N100Q O-247 O-268 O-268AA | |
6N100Q
Abstract: IXFT6N100Q
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6N100Q TAB72 O-268 IXFT6N100Q | |
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 |
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6N100Q 6N100Q O-247 O-268 O-268 | |
IXFH6N100QContextual Info: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30 |
OCR Scan |
6N100Q to150 O-247 O-268 IXFH6N100Q | |
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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6N100Q O-247 O-268 | |
6N90
Abstract: N100
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6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100 | |
6N90
Abstract: IXFH6N100
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6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100 | |
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM |
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6N100Q 6N100Q O-247 O-268 Sour100 O-268AA | |
6N90
Abstract: N100 6n10 6n100
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6N100 O-247 O-204 6N90 N100 6n10 6n100 | |
6N100F
Abstract: transistor ixfh application note 125OC ixfh6n100f
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6N100F O-247 125oC 728B1 transistor ixfh application note 125OC ixfh6n100f | |
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM |
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6N100 O-247 O-204 10Source 100ms 6N100 | |
Contextual Info: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS |
OCR Scan |
6N100E/D MTW6N100E 340K-01 | |
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6N100FContextual Info: Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) |
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6N100F O-247 | |
MOSFET 6N100
Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623
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Original |
6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note | |
TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
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OCR Scan |
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1N100W-1
Abstract: 3N100W-3F 6N100W-20M
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OCR Scan |
MIL-STD-o48 1N100W-1 3N100W-3F 6N100W-20M XN100W-ATT; | |
Contextual Info: ATTENUATORS Type N, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XN100W-XX, XN100W-XXF & XN100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. DC - 1.5 GHz ±0.50 dB |
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XN100W-XX, XN100W-XXF XN100W-XXM 2N100W-03F 6N100W-20FM XN100W-XXY XN100W-ATT: | |
6N100EContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n |
OCR Scan |
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
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OCR Scan |
100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS | |
Contextual Info: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V |
OCR Scan |
O-247 6N100 | |
BNC 7044
Abstract: mini Audio 5709 7043 BNC INMET 64671 26AH TN180-50W 5205/AU attenuation 3dB DC 18GHz BNC Matching T CA 5210 PL F/5057
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dual diode TO254AA 600VContextual Info: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package |
OCR Scan |
1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V |