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    Samtec Inc FJH-06-R-19.99-4

    CABLE FFC 0.5MM
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    DigiKey FJH-06-R-19.99-4 Bulk 1
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    Avnet Americas FJH-06-R-19.99-4 Bulk 1
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    Mouser Electronics FJH-06-R-19.99-4
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    Master Electronics FJH-06-R-19.99-4
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    Sager FJH-06-R-19.99-4 1
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    YAGEO Corporation RC0603FR-07100RL

    Thick Film Resistors - SMD 100 Ohms 100mW 0603 1%
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    TTI RC0603FR-07100RL Reel 11,755,000 5,000
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    YAGEO Corporation RC0603FR-0710RL

    Thick Film Resistors - SMD 10 Ohms 100mW 0603 1%
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    TTI RC0603FR-0710RL Reel 5,780,000 5,000
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    Littelfuse Inc SMCJ36CA

    ESD Protection Diodes / TVS Diodes 1.5kW 36V 5% Bi-Directional
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    TTI SMCJ36CA Reel 120,000 3,000
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    YAGEO Corporation RC0603FR-07102KL

    Thick Film Resistors - SMD 102 kOhms 100mW 0603 1%
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    TTI RC0603FR-07102KL Reel 120,000 5,000
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    6R199 Datasheets Context Search

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    6r199p

    Abstract: mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R199CP PG-TO220 SP000084278 6R199P 6r199p mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199 PDF

    6R199P

    Abstract: 6R199 IPW60R199CP PG-TO-247-3 IPW60R199 JESD22 SP000089802
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R199CP PG-TO247-3 SP000089802 6R199P 009-134-A O-247 6R199P 6R199 IPW60R199CP PG-TO-247-3 IPW60R199 JESD22 SP000089802 PDF

    6R199

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R199CP PG-TO220 SP000084278 6R199P 6R199 PDF

    ISS 99 diode

    Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R199CP PG-TO247-3-1 IPW60R199CP PG-TO247-3-1 SP000089802 6R199P ISS 99 diode 6R199P IPW60R199 6R19 PDF

    6R199P

    Abstract: IPA60R199CP 6R199P mosfet
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability PG-TO220FP • Qualified according to JEDEC1) for target applications


    Original     		IPA60R199CP PG-TO220FP SP000094146 6R199P 6R199P IPA60R199CP 6R199P mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R199CP PG-TO262 SP000103248 6R199P PDF

    mosfet 6R199

    Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A PDF

    6R199P

    Abstract: to-263-3 smd transistor marking DF
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF PDF

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R199CP PG-TO247-3 SP000089802 6R199P 009-134-A O-247 PDF

    6R199P

    Abstract: 6R199P mosfet 6R199P+mosfet
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet PDF

    ISS 99 diode

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R199CP PG-TO220-3-1 SP000084278 6R199P ISS 99 diode PDF

    DF 331 TRANSISTOR

    Abstract: No abstract text available
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R199CP PG-TO220-3-31 SP000094146 6R199P DF 331 TRANSISTOR PDF

    6R199P mosfet

    Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r PDF

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 33 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R199CP PG-TO247-3 SP000089802 6R199P PDF

    6R199P mosfet

    Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		IPL60R199CP 150mm² 6R199P mosfet mosfet 6R199 IPL60R199CP Benchmark MOSFETs PDF

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199 PDF

    6R199P DATA SHEET

    Abstract: ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		IPL60R199CP 150mm² 6R199P DATA SHEET ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R199CP PG-TO262 SP000103248 6R199P PDF

    IPP60R199CP

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R199CP PG-TO220 SP000084278 6R199P IPP60R199CP PDF

    6R199P

    Abstract: 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor
    Text: IPA60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R199CP PG-TO220 6R199P 6R199P 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor PDF

    6R199P

    Abstract: 6R199 6R199P mosfet IPI60R199CP SP000103248 ISS 99 diode mosfet 6R199 6R199P DATA SHEET JESD22 6R19
    Text: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R199CP PG-TO262 SP000103248 6R199P 6R199P 6R199 6R199P mosfet IPI60R199CP SP000103248 ISS 99 diode mosfet 6R199 6R199P DATA SHEET JESD22 6R19 PDF

    6R199P

    Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R199CP PG-TO220-3-31 SP000094146 6R199P 6R199P 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C PDF

    6r199p

    Abstract: IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R199CP PG-TO262 SP000103248 6R199P 6r199p IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199 PDF

    marking code ff p SMD Transistor

    Abstract: 6R199P
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P PDF