HI-50BA
Abstract: analog devices 902-2 61ls HI50BA analog devices "902-2" ch9l 251-22-30-160
Text: ANALOG HighResolution 14-Bit SampleandHoldAmplifier W DEVICES FEATURES :t10V min Input/Output 50ns Aperture Delay 0.5nsApertureJitter -A 6p~Time Range ~ ",;.r/.h';' -r :to.001% Max Gain Linearity Error Complete with Input Buffer APPLICA TlONS Track and Hold
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14-Bit
SHAl144
AC1580Mounting
HI-50BA
analog devices 902-2
61ls
HI50BA
analog devices "902-2"
ch9l
251-22-30-160
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Untitled
Abstract: No abstract text available
Text: CXK581001 P/M 70LLV85LL SONY, 131,072-word x 8-bit High Speed CMOS S tatic RAM D escription CXK581001 P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131,072 words by 8-bit and operates from a single 5V supply. This IC is suitable for use in high speed and low power applications in which
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CXK581001
70LLV
072-word
CXK581001P
CXK581001M
CXK581001P/M-70L770LL
CXK581001P/M-85L/85LL
CXK581001P/M
-70LL785LL
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CXK58267AM-10L
Abstract: CXK58267AM-70L CXK58267AM-12L CXK58267AM-85L 70l7 cxk58267
Text: SONY. CXK58267AM -70LI785LU101LL712LL 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58267AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58267AM’s two chip enable inputs are useful for battery back up operation for
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CXK58267AM
-70L/85L/1
OL/12L
-70LL/85LL/1OLL/12LL
32768-word
CXK58267AM-70L
CXK58267AM-85L
CXK58267AM-10L
CXK58267AM-12L
70l7
cxk58267
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moc 2030
Abstract: 528100 mb84257 LDR 24v
Text: 'ftB 1 'm FUJITSU November 1992 Edition 1.1 DATA SHEET MB84257A-70/-70L/-70LU-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84257A is a 32,768-word by 8-b it static random access memory fabricated
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MB84257A-70/-70L/-70LU-10/-10L/-10LL
256K-BIT
MB84257A
768-word
moc 2030
528100
mb84257
LDR 24v
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