71 DT 4 Search Results

Contextual Info: EUPEC blE ]> • BMGaS'ì? ODOllbS 354 « U P E C TT 71 F, TD 71 F, DT 71 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 71 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 71 F, TD 71 F, DT 71 F

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 71 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 71 F, TD 71 F, DT 71 F

skkt 71 / 16

Abstract: semikron skkt 71/12d skkt 71/16 semikron skkt 19 120 semikron skkt semikron thyristor skkt semikron skkh heatsink for skkt 72 semipack skkt skkt 1000
Contextual Info: VRSM VRRM dv/ VDRM dt cr V V ITRMS (maximum value for continuous operation) 125 A V/µs ITAV (sin. 180; Tcase = 78 °C) 80 A 700 600 500 SKKT 71/06 D 900 800 500 SKKT 71/08 D SKKT 72/08 D 1300 1200 1300 1200 1000 SKKT 71/12 E SKKT 72/12 E 1500 1400 1000 SKKT 71/14 E SKKT 72/14 E

Contextual Info: s e MIKROn V rsm V rrm dv/ V drm dt cr V V SEMIPACK 1 Thyristor/ Diode Modules ITRMS (maximum value for continuous operation) 125 A ITAV (sin. 180; Tease = 78 °C) 80 A V/^S - 700 600 500 SKKT 71/06 D 900 800 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

ISOPLUS247

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings

Supercool

Abstract: Supercool BOX-27 Supercool BOX 27 DA Supercool AB box 27 40120 S-401-20 heat sensor fan project Supercool 12vdc DA-075-12-02-00-00 Supercool sweden
Contextual Info: 1 2 3 4 5 6 Specification: Ta=32°C D A 75 12 Direct Air Fan(s), cold side: Fan(s), warm side: Temperature controller, sensor: Temperature control settings, trim options: Additional controller information: 2 71 W at dT=0°C. Tolerance: ±10%. 12 VDC. Nominal: 12 VDC, Max: 15 VDC.

NFC10-24S05 computer products

Abstract: NFC10-24D15* computer products NFC10-12D15 NFC10-24S15 DC/DC converter max 12v NFC10 NFC10-24D12 NFC10-12D12 NFC10-12S05 NFC10-12S12
Contextual Info: COMPUTER P R DT S / POWER SEE ]> £313103 ODDDbn 4 ^ • CPR N F010 SERIES 10 W att High Density D C /D C Converters * Delivers 10 watts in a 71°C ambient temperature •S m a ll 1" X 2" X 0.375" package * Single and dual outputs * Rugged construction, easy to mount

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP254

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

S11048

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Application-specific gate drive range:

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

SKKT 26/12D

Abstract: skkt26/12d
Contextual Info: BtiE D • ai3ht>71 0G030T5 1 SEKG S E M IK R O N SEMIKRON INC T '- 'z . s - n V rsm V rrm dv/dt cr Itrms (maximum values for continuous operation) 40 A | 50 A | 50 A V drm Itav (sin. 180; Tease “ 32 A (68 °C) 25 A (60 °C) 32 A (68 °C) V V V/|iS 500

A300

Abstract: Q300
Contextual Info: CATALO GUE LI5TIN G GLS LIM IT SW ITC H 21 S LO W -A C TIO N CONTACTS BREAK BEFORE MAKE 5N A P-A C TI0 N CONTACTS CHART H O . Zb MTG-GL-213 @ break 13 14 ' ;2 NORMALLY CLOSED (DOUBLE POLE FIG. 1 to 71 54° to 75c 0° 13-14 OP DT=11.5° * OT 26 39° 26°

Contextual Info: TT T O S H I B A -CDISC R E T E / O P T 01 ßFliaTTaSQ 9097250 TOSHIBA <DISCRETE/OPTO> 99D 16804 TOSHIBA F IE L D SEMICONDUCTOR QQltäQ4 DT-39-\3 E FFE C T TRANSISTOR Y T F 2 5 0 SILIC O N N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

semikron skkt 90

Abstract: semikron skkt 41 SKKT41/12E skkt 103 T25-17 SKKT 330 16E SKKT 56/12 E semikron skkt skkt41/04 semikron skkt 55
Contextual Info: S E M I K R O N INC 3tE » « 1 3 b b 71 Q D G 22 70 7 • SEKG ■ t */rsm V rrm d v / V drm dt cr 75 A V /(is 48 A Itrm s (m aximum values for continuous operation) | 95 A | 75 A | 95A Itav (sin. 180; Tease = 74 °C) V V 60 A S EM IK R D N -z s n 48 A 60 A

L9470

Contextual Info: BT T Ô S Ï Ï Î B F T D Î S C R E T E / OPTO > 9097250 TOSHIBA dT | c1Dcì 75 S 0 D ooim s CDISCRETE/OPTO 39C 01945 71 J J - / / SEMICONDUCTOR T O S H IB A T R A N S IS T O R 2 S C 2 1 O 3 A TECHNICAL DATA m 2 S IL IC O N NPN E P IT A X IA L PLANAR ff x m. m

Contextual Info: Fast Thyristor Modules Type V V drm RRM V V TO h V m i2 Itavm/Ic A 10 m s, ^vj max kA2s 10 m s, ^vj max •103 A/°C 180° el sin t* = ^vj max 1150 6,60 45/85 1,30 It s m A Vdsm=Vdrm, Vrsm=Vrrm+ 100V S i2d t It r m s m ( d i /d t ) cr A/pS DIN tvi = ^vj max IEC747-6

RUTTONSHA all diodes

Abstract: RUTTONSHA 12 FM 120 metal diode IGD 001 RUTTONSHA 12 FM 120 all diodes RUTTONSHA 850C 1785a HIGH VOLTAGE THYRISTOR RUTTONSHA 16 F M 120
Contextual Info: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.26, .41, .56, .71, .91 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES Y Electrically isolated base plate. Y 3500 V RMS isolating voltage. Y Simplified mechanical designs, rapid assembly.

irkt 40

Abstract: IRKH 180 irk 60 IRKT IRK 91 IRK 180 71 DT 4 irkt 180
Contextual Info: IRK.71, .91 Series Bulletin I27132 rev. D 09/97 Circuit Configurations Table IRKT IRKH IRKL 1 ~ (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) K2 G2 (7) (6) Ordering Information Table Device Code T 91 1 2 3 / 16 S90 IRK.92 types

Contextual Info: DO N O T SCALE DIMENSIONS IN THIRD ANGLE METRIC mm U PROJECTION L ALTERNATE FORM xxxx x - £ ¿ ¿ 9 0 l~ x A - 4 x 2 ,0 -8 ,0 SECTION •49, 9- 2 1 , 9- N V /l K A K 71 FT W fe T 7] K“ 7| f~ ~ 7 \ K ~ 7 I IV A-A SECTION B~B 1,7 -21,97" ^ 1 1 2 , 25~ 71 K