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    M1247

    Abstract: diode BYW 200
    Text: BYW29F SERIES PHILIPS INTERNATIONAL 5bE D • 7 1 1 0 0 2 b 0 0 4 1 5 5 4 0^5 « P H I N — ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES T - Û 3 -I7 Glass-passivated, high-efficiency epitaxial rectifier diodes in SOT-186 full-pack envelopes, featuring


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    BYW29F OT-186 29quare 711Qfl2b M1247 diode BYW 200 PDF

    TIP32AF

    Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
    Text: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


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    TIP32F; TIP32BF; TIP32DF 711002b OT186 TIP31F, TIP31AF, TIP31BF, TIP31CF andTIP31DF. TIP32AF TIP32DF TIP31AF TIP31BF TIP31F TIP32BF TIP32F 32-AF PDF

    SSOP16

    Abstract: TSA5526 TSA5526AM TSA5526AT TSA5526M TSA5526T TSA5527 TSA5527AM TSA5527M TSA5527T
    Text: Philips Semiconductors Product specification 1.3 GHz universal bus-controlled TV synthesizers TSA5526; TSA5527 FEATURES • Complete 1.3 GHz single chip system • Four PNP band switch buffers 40 mA • 33 V output tuning voltage • in-lock detector • 5-step ADC


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    15-bit 711i0Ã SSOP16 TSA5526 TSA5526AM TSA5526AT TSA5526M TSA5526T TSA5527 TSA5527AM TSA5527M TSA5527T PDF