buk657-500
Abstract: BUK657-500B T0220AB transistor D 588
Text: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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00b432b
BUK657-500B
T0220AB
buk657-500
transistor D 588
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80c751
Abstract: 1N24 CXA 1240 S87C751 80C51 83C751 87C751 8XC751 S87C751-1F24 S87C751-2F24
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers 83C751/87C751 DESCRIPTION The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost. The 8XC751 Microcontroller is fabricated with Philips high-density
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83C751/87C751
83C751/87C751
80C51
8XC751
83C751)
87C751)
16-bit
80c751
1N24
CXA 1240
S87C751
83C751
87C751
S87C751-1F24
S87C751-2F24
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ST0007
Abstract: UV 471 80c51 user guide cmos 556 timer intel embedded microcontroller handbook XA-G2 80C51 T10E
Text: INTEGRATED CIRCUITS Objective specification 1995 Aug 03 IC25 Data Handbook Philips Semiconductors 7i i o a a t n o i 2 ti?t, d e s PHILIPS Objective specification Philips Semiconductors CMOS single-chip 16-bit microcontroller FAMILY DESCRIPTION XA-G2 • Instruction set tailored for high level language support
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711002t,
16-bit
80C51
ST0007
UV 471
80c51 user guide
cmos 556 timer
intel embedded microcontroller handbook
XA-G2
T10E
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SOT122A
Abstract: 7Z78437
Text: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to
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Qb3571
BLY87C/01
SOT122A
7Z78437
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TDA8745H
Abstract: SFE 10.7MJA SFE 7.02 MHz 10.7MS3 line AMPLIFIER satellite sfe 5,5 ma QFP44 SDIP42 TDA8740 TDA8741
Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control if ifp H S FEATURES TDA8745 - • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 MHz - reference oscillator 4 MHz using a crystal or 4 MHz frequency source
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TDA8745
7110a5t.
TDA8745H
SFE 10.7MJA
SFE 7.02 MHz
10.7MS3
line AMPLIFIER satellite
sfe 5,5 ma
QFP44
SDIP42
TDA8740
TDA8741
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D-25CF
Abstract: 3909
Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 BUK 539-60A PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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39-60A
7110SEb
01i-state
T-39-09
BUK539-60A
711DfiSb
0044b78
D-25CF
3909
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AF102
Abstract: BAV18 diode 1BL BAV19 BAV20 BAV21 KAV21
Text: SbE D • 711002b 00402b? 003 « P H I N BAV18 to 21 PHILIPS INTERNATIONAL 5bE » ^ ^ W P W iW m W W T -Ô W N 7 - IS GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
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711002b
00402b?
BAV18
DO-35
BAV19
BAV20
BAV21
GQ4Q274
AF102
diode 1BL
KAV21
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL 41E D • ?110S2t DOSOSht t. W P H P h ilip s S e m ic o n d u c t o r s P ro d u c t s p e c ific a tio n High voltage optocouplers SL5582W/SL5583W FEATURES • A w ide body encapsulation with a pin distance of 1 0 .1 6 m m • An external cle ara n c e of 9 .6 mm
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110S2t
SL5582W/SL5583W
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