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    711G0SB Search Results

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    bc140

    Abstract: BC141 BC141-16 BC141-10 BC140-10 BC140-16 BC160 BC161 J 3305 BC140 10
    Text: _ _ _ PHILIPS INTERNATIONAL 5bE D • BC140 BC141 j 711G0Sb 0 Q 4 n b 2 fl'ìS H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161.


    OCR Scan     		PDF BC140 BC141 711002b 7--33-OS' BC160 BC161. BC140 BC140-10 BC140-16 BC141 BC141-16 BC141-10 BC140-16 BC161 J 3305 BC140 10

    P83C524

    Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
    Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES


    OCR Scan     		PDF L1343 P83C524 P83C524 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP

    11AV1

    Abstract: 11AV2 s415 RF M1E-H 11AV3 11AV-3
    Text: MIE D PHILIPS INTERNATIONAL • 711002b Q030M24 1 M P H I N P h ilip s S e m ic o n d u c to rs Product sp ecification Heavy duty optocouplers CNW11AV-1/2/3 FEA TUR ES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a


    OCR Scan     		PDF 711002b Q030M24 CNW11AV-1/2/3 11AV1 11AV2 s415 RF M1E-H 11AV3 11AV-3

    BUK416-100AE

    Abstract: BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH
    Text: PHILIPS INTERNATIONAL bSE D H 7110SBb 00b3fl7b DAT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in


    OCR Scan     		PDF 7110SBb 00b3fl7b BUK416-100AE/BE OT227B BUK416 -100AE -100BE BUK416-1OOAE/BE BUK41B-100//E BUK416-100AE BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH

    BD204

    Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
    Text: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.


    OCR Scan     		PDF BD202F; BD204F BDX78F 7110fl2b D042fl5b T-33-1 inSOT186 BD201F, BD203F BDX77F BD204 BD202F til 31a BD201F BD204F BDX78F Philips 119