Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    711Q6HB Search Results

    711Q6HB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k427 transistor

    Abstract: k427 k427 diode BUK427-500B
    Text: 7=3 Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor m 711Q6Hb DQM4145 12G PHILIPS INTERNATIONAL SbE GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK427-500B DQM4145 PINNING-SOT199 k427 transistor k427 k427 diode BUK427-500B

    LB-19

    Abstract: DDBS440
    Text: Philips Semiconductors Military Advanced BiCMOS Products Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State FEATURES DESCRIPTION • High speed parallel registers with positive edge-triggered D-type flip-flops The 54ABT821 high-performance BiCMOS


    OCR Scan     		PDF 10-bit 54ABT821 48mA/-24mA 500mA 54ABT821 54ABT 500ns LB-19 DDBS440

    Untitled

    Abstract: No abstract text available
    Text: BYX56 SERIES M A INTENANCE TYPE - PHILIPS INTERNATIONAL SbE D • 711Dû2t. □ □41t.4b STT ■ PHIN T z p r-n CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.


    OCR Scan     		PDF BYX56 BYX56â 1400R. 711002b