8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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711002b
G0114SS
PCF84C121
PCF84C121.
PCF84C121
PCF84C12.
7110fl2b
MCL T1-1
MAB8048
PCF84C12
PCF84C121P
PCF84C121T
S020
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J108
Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)
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711Dfl2b
PZFJ108/PZFJ109/PZFJ110
PZFJ108)
-SOT223
OT223
MBB114
PZFJ109)
PZFJ110)
711082b
J108
J109
J110
PZFJ108
PZFJ109
PZFJ110
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RZB12250Y
Abstract: No abstract text available
Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.
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RZB12250Y
FO-57C.
RZB12250Y
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BTW42-600R
Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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DDbS43i
BTW42
BTW42â
1000R.
1000r
BTW38
BTW42-600R
TSM 1250
1000R
mml 600
600R
BTW42-600RC
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1df diode
Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface
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711Dfl2b
74ABT240-1
12mA/-32mA
500mA
74ABT240-1
74ABT
500ns
1df diode
74ABT240-1D
74ABT240-1DB
74ABT240-1N
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Untitled
Abstract: No abstract text available
Text: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N
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RX3034B70W
711Dfl2b
711Dfl2b
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T0220AB
Abstract: ScansUX66
Text: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier
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-f-23-07_
0024nS
BYV32E-100/150/200
T0220AB;
T0220
T0220AB
ScansUX66
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BUK102-50GL
Abstract: IEC134 T0220AB AAB3 buk102-500l
Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and
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7110A2b
D0b3fl25
BUK102-50GL
ll3/lls25t
IEC134
T0220AB
AAB3
buk102-500l
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Untitled
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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PZ2327B15U
711Dfl2b
T-33-09
7110flEb
711065b
Q04b4c
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TRANSISTOR SMD MARKING CODE 5b
Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for
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7110fl2tj
BLU86
OT223
OT223
TRANSISTOR SMD MARKING CODE 5b
transistor smd CF RQ
TRANSISTOR SMD MARKING CODE KF
smd transistor marking L6 NPN
SMD Transistor 7z
transistor marking smd 7z
5B smd transistor data
transistor SMD MARKING CODE HF
smd marking code SSs
SMD MARKING GP TRANSISTOR
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M3163
Abstract: M3162
Text: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,
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BYV121
711Dfl2t
T-03-17
711002b
0D41S03
D8493
M3163
M3162
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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BYX25
711Dfl2b
BYX25--600
BYX25--1400.
BYX25--600R
BYX25--1400R.
10-32UNF
711DflSti
BYX25-600
diode BYX25 600
BYX25-600R
BYX25-1400
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BFQ290
Abstract: BFQ291
Text: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector
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-33-s
BFQ290
711Dfl2h
0045b73
BFQ291.
BFQ290
OT172A1
MBC869
OT172A1.
BFQ291
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DIODE S3H
Abstract: km 1667 smd diode os A2 diode smd ultra fast recovery time diode A1 SMD DIODE d 1667 dual reverse diode smd NE ultra low drop forward voltage diode
Text: Philips Semiconductors 711Dfl2fci 0 D b ci b 7 4 T il BPHIN Dual rectifiers - SMD version Ultra fast recovery Product specification BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223
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711DaEb
BYV40
OT223
DIODE S3H
km 1667
smd diode os
A2 diode smd
ultra fast recovery time diode
A1 SMD DIODE
d 1667
dual reverse diode
smd NE
ultra low drop forward voltage diode
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PH5415
Abstract: ph54 h541 PH5416
Text: PH5415 PH5416 PHILIPS INTERNATIONAL 5bE J> • 711Dfl2b D O M S S 4 4 033 M P H I N 3 7 -^ / 7 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage smali-signal transistors, prim arily intended fo r use in telephony applications and encapsulated in a T O -92 envelope.
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PH5415
PH5416
711DflEb
D042544
PH5415
ph54
h541
PH5416
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BFQ32
Abstract: BFQ32S BFG31 BFQ149 X3A-BFQ32
Text: Philips Semiconductors Product specification T-3|-c?o PNP 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL 711Dfl2b OOMbCHB flfl? • PHIN 5bE t DESCRIPTION X3A-BFQ32 MECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole
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BFQ32S
BFQ149
BFG31
OT223)
X3A-BFQ32
X3A-BFQ32
711Dfl2b
URV-3-5-52/733
BFQ32
BFQ32S
BFG31
BFQ149
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PCF8567C
Abstract: sot158a PCF8567CP PCF8567CT CMOS applications handbook
Text: D E V ELO P M EN T DATA PCF8567C T h is data sheet c o n ta in s a dvance in fo rm a tio n and sp e cific atio n s are subject to cha nge w it h o u t notice. PH IL IP S I N T E R N A T I O N A L SDE D • 711Dfl2b D O B S lb E SS7 ■ PHIN FOR D E T A ILE D IN F O R M A T IO N SEE THE LATEST ISSUE OF H A N DBO O K IC12 0 R D A T A SH EET
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PCF8567C
711002b
PCF8567C
PCF8567CP:
40-lead
OT129)
PCF8567CT:
VS040;
sot158a
PCF8567CP
PCF8567CT
CMOS applications handbook
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BUK436-200A
Abstract: BUK436-200B Philips 016 S
Text: P H IL I PS I N T E R N A T I O N A L bSE D • 711Dfl2b G 0 b 3^ Q l ObS W P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711DflSb
BUK436-200A/B
BUK436
-200A
-200B
BUK436-200A
BUK436-200B
Philips 016 S
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BD132
Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.
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BD132
711002b
GDM2770
OT-32
BD131.
O-126
OT-32)
BD131
NPN POWER TRANSISTOR SOT-32
M 5229 IC
GQM2771
IEC134
transistor af 126
d5224
transistor Bd132
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Untitled
Abstract: No abstract text available
Text: JA100 JA101 PHILIPS INTERNATIONAL SbE D • 711Dfl2b 0 0 4 2 4 4 b T25 ■ P H I N T -T f- 2 / PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively.
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JA100
JA101
711Dfl2b
JC500
JC501
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sap16
Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
Text: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification
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TDA9850
711Dfl2b
7110AE
sap16
CSB503F5
A2x smd
sap15
SAP6
SAP12
SMU FM IC
TDA9850T
CSB503F58
SDIP32
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12 pin 4digit 7 segment display
Abstract: ltd226-r12 LTD226F-12 7 segment display 12 pin LTD226R-12 LTD226R-22
Text: PH ILI PS INTERNATIONAL Philips Components bDE D • 711Dfl2b GQ57GS1 113 IPHIN LTD226 Data sheet status P rod uct specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD226 is a 4-digit, 7-segment, multi-function LCD.
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711Dfl2b
GQ57GS1
LTD226
LTD226
LTD226R-11
LTD226R-12
LTD226F-12
LTD226R-21
IEC134)
12 pin 4digit 7 segment display
ltd226-r12
7 segment display 12 pin
LTD226R-22
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BFW17A
Abstract: bfw17a philips semiconductor lem HA
Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good
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BFW17A
711Dfl2b
D04fc
0D4b025
BFW17A
bfw17a philips semiconductor
lem HA
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