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    711DFL2B Search Results

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    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    MCL T1-1

    Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
    Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM


    OCR Scan     		PDF 711002b G0114SS PCF84C121 PCF84C121. PCF84C121 PCF84C12. 7110fl2b MCL T1-1 MAB8048 PCF84C12 PCF84C121P PCF84C121T S020

    J108

    Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
    Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)


    OCR Scan     		PDF 711Dfl2b PZFJ108/PZFJ109/PZFJ110 PZFJ108) -SOT223 OT223 MBB114 PZFJ109) PZFJ110) 711082b J108 J109 J110 PZFJ108 PZFJ109 PZFJ110

    RZB12250Y

    Abstract: No abstract text available
    Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.


    OCR Scan     		PDF RZB12250Y FO-57C. RZB12250Y

    BTW42-600R

    Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
    Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


    OCR Scan     		PDF DDbS43i BTW42 BTW42â 1000R. 1000r BTW38 BTW42-600R TSM 1250 1000R mml 600 600R BTW42-600RC

    1df diode

    Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
    Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface


    OCR Scan     		PDF 711Dfl2b 74ABT240-1 12mA/-32mA 500mA 74ABT240-1 74ABT 500ns 1df diode 74ABT240-1D 74ABT240-1DB 74ABT240-1N

    Untitled

    Abstract: No abstract text available
    Text: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N


    OCR Scan     		PDF RX3034B70W 711Dfl2b 711Dfl2b

    BUK102-50GL

    Abstract: IEC134 T0220AB AAB3 buk102-500l
    Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and


    OCR Scan     		PDF 7110A2b D0b3fl25 BUK102-50GL ll3/lls25t IEC134 T0220AB AAB3 buk102-500l

    Untitled

    Abstract: No abstract text available
    Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.


    OCR Scan     		PDF PZ2327B15U 711Dfl2b T-33-09 7110flEb 711065b Q04b4c

    BYX25

    Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
    Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:


    OCR Scan     		PDF BYX25 711Dfl2b BYX25--600 BYX25--1400. BYX25--600R BYX25--1400R. 10-32UNF 711DflSti BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400

    on 5295 transistor

    Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
    Text: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain


    OCR Scan     		PDF BFR91A 711Dfl2b DD457CH BFR91A/02 ON4185) BFQ23- on 5295 transistor fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187

    PH5415

    Abstract: ph54 h541 PH5416
    Text: PH5415 PH5416 PHILIPS INTERNATIONAL 5bE J> • 711Dfl2b D O M S S 4 4 033 M P H I N 3 7 -^ / 7 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage smali-signal transistors, prim arily intended fo r use in telephony applications and encapsulated in a T O -92 envelope.


    OCR Scan     		PDF PH5415 PH5416 711DflEb D042544 PH5415 ph54 h541 PH5416

    BFQ32

    Abstract: BFQ32S BFG31 BFQ149 X3A-BFQ32
    Text: Philips Semiconductors Product specification T-3|-c?o PNP 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL 711Dfl2b OOMbCHB flfl? • PHIN 5bE t DESCRIPTION X3A-BFQ32 MECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole


    OCR Scan     		PDF BFQ32S BFQ149 BFG31 OT223) X3A-BFQ32 X3A-BFQ32 711Dfl2b URV-3-5-52/733 BFQ32 BFQ32S BFG31 BFQ149

    PCF8567C

    Abstract: sot158a PCF8567CP PCF8567CT CMOS applications handbook
    Text: D E V ELO P M EN T DATA PCF8567C T h is data sheet c o n ta in s a dvance in fo rm a tio n and sp e cific atio n s are subject to cha nge w it h o u t notice. PH IL IP S I N T E R N A T I O N A L SDE D • 711Dfl2b D O B S lb E SS7 ■ PHIN FOR D E T A ILE D IN F O R M A T IO N SEE THE LATEST ISSUE OF H A N DBO O K IC12 0 R D A T A SH EET


    OCR Scan     		PDF PCF8567C 711002b PCF8567C PCF8567CP: 40-lead OT129) PCF8567CT: VS040; sot158a PCF8567CP PCF8567CT CMOS applications handbook

    BD132

    Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
    Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.


    OCR Scan     		PDF BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132

    Untitled

    Abstract: No abstract text available
    Text: JA100 JA101 PHILIPS INTERNATIONAL SbE D • 711Dfl2b 0 0 4 2 4 4 b T25 ■ P H I N T -T f- 2 / PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively.


    OCR Scan     		PDF JA100 JA101 711Dfl2b JC500 JC501

    sap16

    Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
    Text: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification


    OCR Scan     		PDF TDA9850 711Dfl2b 7110AE sap16 CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32

    12 pin 4digit 7 segment display

    Abstract: ltd226-r12 LTD226F-12 7 segment display 12 pin LTD226R-12 LTD226R-22
    Text: PH ILI PS INTERNATIONAL Philips Components bDE D • 711Dfl2b GQ57GS1 113 IPHIN LTD226 Data sheet status P rod uct specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD226 is a 4-digit, 7-segment, multi-function LCD.


    OCR Scan     		PDF 711Dfl2b GQ57GS1 LTD226 LTD226 LTD226R-11 LTD226R-12 LTD226F-12 LTD226R-21 IEC134) 12 pin 4digit 7 segment display ltd226-r12 7 segment display 12 pin LTD226R-22

    BFW17A

    Abstract: bfw17a philips semiconductor lem HA
    Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good


    OCR Scan     		PDF BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


    OCR Scan     		PDF 711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640

    BFY90 PHILIPS

    Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
    Text: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)


    OCR Scan     		PDF BFW92 BFY90 BFS17 X3A-BFW92 X3A-BFW92 711Dfl2b RV-3-5-52/733 IEC134) BFY90 PHILIPS BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 philips bfw92

    BYW92

    Abstract: BYW92-50 BYW92-50U ultra fast recovery diodes
    Text: BYW92 SERIES M AINTENANCE TYPE PHILIPS INTERNATIONAL 5b E D • 711Dfl2b 0041560 Ifl? ■ PHIN T -< 9 3 '/? ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita x ia l re c tifie r dio d es in D O -5 m etal envelopes, fea tu rin g lo w


    OCR Scan     		PDF BYW92 711GflSb BYW92â M1525 10-dlp/dt T-OJ-19 711002b M1579 BYW92-50 BYW92-50U ultra fast recovery diodes

    2N4401

    Abstract: transistor 2n4401 philips 2N4400 philips 2N4400 2N4401 2N4400 N4400
    Text: 2N4400 2N4401 PHILIPS INTERNATIONAL SbE ]> m 711Dfl2b 0QM2bbb bflS « P H I N SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 27" N-P-N silicon planar epitaxial transistors in plastic TO -92 envelope for use in general purpose applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF 2N4400 2N4401 711Dfl2b 0042bbb 711002b 0Q42bbà 2N4401 transistor 2n4401 philips 2N4400 philips 2N4400 2N4401 N4400

    ofwg

    Abstract: ofwg3203 77ti OFWG*3203 ofwl9350 IEC134 TDA3856 TDA3856T TDA3857 TDA3858
    Text: INTEGRATED CIRCUITS h S IK H E T TDA3856 Quasi-split sound processor for all standards Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 711Dfl2b 0077^00 SHT • Philips Semiconductors


    OCR Scan     		PDF TDA3856 711Dfl2b TDA3858 TDA3857 7110A2L. 7A004 ofwg ofwg3203 77ti OFWG*3203 ofwl9350 IEC134 TDA3856 TDA3856T TDA3857 TDA3858