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    mst 702 lf

    Abstract: BUK995-60A
    Text: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


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    PDF OT263 BUK995-60A 711QfiEb 004M7LS BUK995-60A mst 702 lf

    V27AF

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL mse: ยป 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control


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    PDF BUV27F BUV27AF OT186 OT186. 711GflBh 0G310TD T-33-07 V27AF