Octal latch open
Abstract: 74F605 N74F605D N74F605N
Text: PHILIPS INTERNATIONAL Document No. 853-0030 34E » H 711Qflab G O i a n ? Ô F A S J _ 7 4 F 0 0 5 <_ _ ECNNo. 07670 Date of issue September 20,1969 Status Product Specification T fLatch I I Dual Octal Latch Open Collector I m mm im ^ •■■ ■■■ mm mm mm mm mm mm mm
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00131e)
74F605
16-blt-wlde
28-Pin
N74F605N
N74F605D
74F605
Octal latch open
N74F605D
N74F605N
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A GENERAL DESCRIPTION The TEA1064A is a bipolar integrated circuit that performs all the speech and line interface functions
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TEA1064A
TEA1064A
PCD3310;
PCD332X
7Z26S11
PCD3344
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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RZ2731B32W
Abstract: MCB542 3fc transistor
Text: T ^ 3 3 n f_ P h ilip s C o m p o n e n t s RZ2731B32W Data sheet status Product specification NPN Silicon planar epitaxial date of Issue Ju n e 1992 microwave power transistor _ — - - SbE PHILIPS INTERNATIONAL 3 m 7 1 10 02 b D E S C R IP T IO N
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T-33-/
RZ2731B32W
7110fl2b
D04fc,
711005b
Q0MbS71
RZ2731B32W
MCB542
3fc transistor
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