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    715MW Price and Stock

    TURCK Inc VAS4-K2007-1.5M-WSC4.5T

    |Turck VAS4-K2007-1.5M-WSC4.5T
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    Newark VAS4-K2007-1.5M-WSC4.5T Bulk 1
    • 1 $76.76
    • 10 $76.76
    • 100 $76.76
    • 1000 $76.76
    • 10000 $76.76
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    Bimba Manufacturing Company FO-171.5-MW

    1-1/2in Bore ; Stroke: 0.312 Inch(s); Threaded Mounting Holes, Rear [3R] | Bimba FO-171.5-MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FO-171.5-MW Bulk 5 Weeks 1
    • 1 $135.75
    • 10 $135.75
    • 100 $135.75
    • 1000 $135.75
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    Bimba Manufacturing Company FS-171.5-MW

    Cylinder, Square Flat-1 series | Bimba FS-171.5-MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FS-171.5-MW Bulk 5 Weeks 1
    • 1 $180.35
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    Bimba Manufacturing Company FOR-171.5-MW

    Cylinder, Flat-I, Rev Act, 1-1/2In Bore ; Stroke: 1.5 Inch(s); Magnet Position | Bimba FOR-171.5-MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FOR-171.5-MW Bulk 5 Weeks 1
    • 1 $169.45
    • 10 $169.45
    • 100 $169.45
    • 1000 $169.45
    • 10000 $169.45
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    Bimba Manufacturing Company FOD-171.5-MW

    2-1/2in Bore ; Stroke: 3.75 Inch(s); Trunnion Mount, Rear [2R] | Bimba FOD-171.5-MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FOD-171.5-MW Bulk 5 Weeks 1
    • 1 $195.85
    • 10 $195.85
    • 100 $195.85
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    715MW Datasheets Context Search

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    BAP51-02

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BAP51-02 715mW OD523 BAP51-02

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BAP51-02 715mW OD523

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BAP51-02 715mW OD523

    Untitled

    Abstract: No abstract text available
    Text: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:


    Original     		PDF TPS799xx SBVS056I 200mA, TPS799xx 100mV 200mA

    Untitled

    Abstract: No abstract text available
    Text: TPS717xx www.ti.com. SBVS068G – FEBRUARY 2006 – REVISED APRIL 2009 Low Noise, High-Bandwidth PSRR Low-Dropout 150mA Linear Regulator


    Original     		PDF TPS717xx SBVS068G 150mA 100kHz 100Hz 100kHz)

    Untitled

    Abstract: No abstract text available
    Text: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:


    Original     		PDF TPS799xx SBVS056I 200mA, TPS799xx 100mV 200mA

    Untitled

    Abstract: No abstract text available
    Text: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR


    Original     		PDF TPS734xx SBVS089F 250mA, TPS734xx

    MSM5117800

    Abstract: SOJ28
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G0043-17-41 MSM5117800B MSM5117800B 152-Word MSM5117800BCMOS2 42CMOS 28SOJ28TSOP 04832ms 28400milSOJ SOJ28-P-400-1 MSM5117800 SOJ28

    24-Pin Plastic DIP

    Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
    Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)


    Original     		PDF P4C188/188L P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 15DMB 20DMB 24-Pin Plastic DIP 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188

    Untitled

    Abstract: No abstract text available
    Text: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR


    Original     		PDF TPS734xx SBVS089F 250mA, 250mA

    NTE15023

    Abstract: No abstract text available
    Text: NTE15023 Integrated Circuit dbx TV Noise Reduction Integrated Circuit Description: The NTE15023 is an integrated circuit designed for the dbx–TV noise reduction decode circuit for multichannel TV sound systems. This device contains a voltage controlled amplifier, a variable de–emphasis circuit with new configuration and RMS detectors with completely integrated active band pass


    Original     		PDF NTE15023 NTE15023

    Untitled

    Abstract: No abstract text available
    Text: TPS799xx www.ti.com SBVS056F – JANUARY 2005 – REVISED FEBRUARY 2006 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES • • • • • • • • • • • DESCRIPTION 200mA Low Dropout Regulator with EN


    Original     		PDF TPS799xx SBVS056F 200mA, 200mA 100mV ThinSOT-23, TPS799xx

    Untitled

    Abstract: No abstract text available
    Text: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN


    Original     		PDF TPS799xx SBVS056E 200mA, 200mA 100mV ThinSOT-23,

    TPS799xxYZU

    Abstract: No abstract text available
    Text: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN


    Original     		PDF TPS799xx SBVS056E 200mA, 200mA 100mV ThinSOT-23, TPS799xxYZU

    TDC1048J

    Abstract: TDC1048J6C TDC1048J6 ADC-208MC CA3318C IR3K06 TDC1048B6C
    Text: -217- • 8 t ' i hÌÈJlJJtgJSA- D 3 9 IR3K03A/04A • >-+ - 7" +25' C 20MSPS typ +5V + 1/2LSB +5V TDC1048B6C TRW TFS 20MSPS min ±0. n 0.1% +5,-5. 2V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS


    OCR Scan     		PDF CA3318C ADC-208MC HA19211/19212 IR3K06 TDC1048B6C IR3K03A/04A 13MSPS 15MSPS 20MSPS TDC1048J TDC1048J6C TDC1048J6

    6550B

    Abstract: ADC-208MC CA3318C IR3K06 TDC1048B6C
    Text: • 8 t ' i hÌÈJlJJtgJSA- D 3 æ g ^ —il JlH fi SASifé LIN AL I N ^ liSHöft * typ +5V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS 2.OVp-p 400mf typ BIN TTL,CMOS 2. OYp-p BIN,CBN ECL -2.0 V


    OCR Scan     		PDF CA3318C ADC-208MC HA19211/19212 IR3K06 TDC1048B6C IR3K03A/04A 13MSPS 15MSPS 20MSPS 6550B

    TC5117800bnt-60

    Abstract: TC5117800B
    Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


    OCR Scan     		PDF TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400

    tc5118180

    Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
    Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		PDF TC511818 QAJ/AFT-70/80 TC5118180AJ/FT TC5118180AJ/AFT TC5118180AJ/AFT-70/80 tc5118180 TC5118180AJ TC5118180A A495 A509 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator


    OCR Scan     		PDF TC5117800BNJ/BNT-60/70 715mW TC5117800BNT-60) 605mW TC5117800BNT-70)

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains


    OCR Scan     		PDF 17805A-60/-70 MB8117805A MB8117805A-60 MB8117805A-70 28-LEAD LCC-28P-M07) C28058S-2C

    Untitled

    Abstract: No abstract text available
    Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended


    OCR Scan     		PDF HM5118165B 1048576-word 16-bit ADE-203-000 576-word 16-bit. ns/70 ns/80

    mb8117400

    Abstract: No abstract text available
    Text: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of


    OCR Scan     		PDF MB8117400-60/-70/-80 MB8117400 196-bits SD-08285-02-93-DS