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TURCK Inc VAS4-K2007-1.5M-WSC4.5T \|Turck VAS4-K2007-1.5M-WSC4.5T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VAS4-K2007-1.5M-WSC4.5T	Bulk			1	1 $76.76 10 $76.76 100 $76.76 1000 $76.76 10000 $76.76	Buy Now
Bimba Manufacturing Company FO-171.5-MW 1-1/2in Bore ; Stroke: 0.312 Inch(s); Threaded Mounting Holes, Rear [3R] \| Bimba FO-171.5-MW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	FO-171.5-MW	Bulk		5 Weeks	1	1 $135.75 10 $135.75 100 $135.75 1000 $135.75 10000 $135.75	Get Quote
Bimba Manufacturing Company FS-171.5-MW Cylinder, Square Flat-1 series \| Bimba FS-171.5-MW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	FS-171.5-MW	Bulk		5 Weeks	1	1 $180.35 10 $180.35 100 $180.35 1000 $180.35 10000 $180.35	Get Quote
Bimba Manufacturing Company FOD-171.5-MW 2-1/2in Bore ; Stroke: 3.75 Inch(s); Trunnion Mount, Rear [2R] \| Bimba FOD-171.5-MW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	FOD-171.5-MW	Bulk		5 Weeks	1	1 $195.85 10 $195.85 100 $195.85 1000 $195.85 10000 $195.85	Get Quote
Bimba Manufacturing Company FOR-171.5-MW Cylinder, Flat-I, Rev Act, 1-1/2In Bore ; Stroke: 1.5 Inch(s); Magnet Position \| Bimba FOR-171.5-MW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	FOR-171.5-MW	Bulk		5 Weeks	1	1 $169.45 10 $169.45 100 $169.45 1000 $169.45 10000 $169.45	Get Quote

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715MW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BAP51-02 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	BAP51-02 715mW OD523 BAP51-02	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	BAP51-02 715mW OD523	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	BAP51-02 715mW OD523	PDF
Untitled Abstract: No abstract text available Text: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:	Original	TPS799xx SBVS056I 200mA, TPS799xx 100mV 200mA	PDF
Untitled Abstract: No abstract text available Text: TPS717xx www.ti.com. SBVS068G – FEBRUARY 2006 – REVISED APRIL 2009 Low Noise, High-Bandwidth PSRR Low-Dropout 150mA Linear Regulator	Original	TPS717xx SBVS068G 150mA 100kHz 100Hz 100kHz)	PDF
Untitled Abstract: No abstract text available Text: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:	Original	TPS799xx SBVS056I 200mA, TPS799xx 100mV 200mA	PDF
Untitled Abstract: No abstract text available Text: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR	Original	TPS734xx SBVS089F 250mA, TPS734xx	PDF
MSM5117800 Abstract: SOJ28 Text: お客様各位資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコンダクタ株式会社に承継されました。従いまして、本資料中には「沖電気工業株	Original	J2G0043-17-41 MSM5117800B MSM5117800B 152-Word MSM5117800BCMOS2 42CMOS 28SOJ28TSOP 04832ms 28400milSOJ SOJ28-P-400-1 MSM5117800 SOJ28	PDF
24-Pin Plastic DIP Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)	Original	P4C188/188L P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 15DMB 20DMB 24-Pin Plastic DIP 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188	PDF
Untitled Abstract: No abstract text available Text: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR	Original	TPS734xx SBVS089F 250mA, 250mA	PDF
NTE15023 Abstract: No abstract text available Text: NTE15023 Integrated Circuit dbx TV Noise Reduction Integrated Circuit Description: The NTE15023 is an integrated circuit designed for the dbx–TV noise reduction decode circuit for multichannel TV sound systems. This device contains a voltage controlled amplifier, a variable de–emphasis circuit with new configuration and RMS detectors with completely integrated active band pass	Original	NTE15023 NTE15023	PDF
Untitled Abstract: No abstract text available Text: TPS799xx www.ti.com SBVS056F – JANUARY 2005 – REVISED FEBRUARY 2006 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES • • • • • • • • • • • DESCRIPTION 200mA Low Dropout Regulator with EN	Original	TPS799xx SBVS056F 200mA, 200mA 100mV ThinSOT-23, TPS799xx	PDF
Untitled Abstract: No abstract text available Text: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN	Original	TPS799xx SBVS056E 200mA, 200mA 100mV ThinSOT-23,	PDF
TPS799xxYZU Abstract: No abstract text available Text: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN	Original	TPS799xx SBVS056E 200mA, 200mA 100mV ThinSOT-23, TPS799xxYZU	PDF

TDC1048J Abstract: TDC1048J6C TDC1048J6 ADC-208MC CA3318C IR3K06 TDC1048B6C Text: -217- • 8 t ' i hÌÈJlJJtgJSA- D 3 9 IR3K03A/04A • >-+ - 7" +25' C 20MSPS typ +5V + 1/2LSB +5V TDC1048B6C TRW TFS 20MSPS min ±0. n 0.1% +5,-5. 2V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS	OCR Scan	CA3318C ADC-208MC HA19211/19212 IR3K06 TDC1048B6C IR3K03A/04A 13MSPS 15MSPS 20MSPS TDC1048J TDC1048J6C TDC1048J6	PDF
6550B Abstract: ADC-208MC CA3318C IR3K06 TDC1048B6C Text: • 8 t ' i hÌÈJlJJtgJSA- D 3 æ g ^ —il JlH fi SASifé LIN AL I N ^ liSHöft * typ +5V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS 2.OVp-p 400mf typ BIN TTL,CMOS 2. OYp-p BIN,CBN ECL -2.0 V	OCR Scan	CA3318C ADC-208MC HA19211/19212 IR3K06 TDC1048B6C IR3K03A/04A 13MSPS 15MSPS 20MSPS 6550B	PDF
TC5117800bnt-60 Abstract: TC5117800B Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B	PDF
TC514265DJ Abstract: TC514265D TC514265 SOJ40-P-400 Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper	OCR Scan	TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400	PDF
tc5118180 Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498 Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit	OCR Scan	TC511818 QAJ/AFT-70/80 TC5118180AJ/FT TC5118180AJ/AFT TC5118180AJ/AFT-70/80 tc5118180 TC5118180AJ TC5118180A A495 A509 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator	OCR Scan	TC5117800BNJ/BNT-60/70 715mW TC5117800BNT-60) 605mW TC5117800BNT-70)	PDF
Untitled Abstract: No abstract text available Text: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains	OCR Scan	17805A-60/-70 MB8117805A MB8117805A-60 MB8117805A-70 28-LEAD LCC-28P-M07) C28058S-2C	PDF
Untitled Abstract: No abstract text available Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended	OCR Scan	HM5118165B 1048576-word 16-bit ADE-203-000 576-word 16-bit. ns/70 ns/80	PDF
mb8117400 Abstract: No abstract text available Text: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of	OCR Scan	MB8117400-60/-70/-80 MB8117400 196-bits SD-08285-02-93-DS	PDF

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715MW Search Results

715MW Price and Stock

TURCK Inc VAS4-K2007-1.5M-WSC4.5T

Bimba Manufacturing Company FO-171.5-MW

Bimba Manufacturing Company FS-171.5-MW

Bimba Manufacturing Company FOD-171.5-MW

Bimba Manufacturing Company FOR-171.5-MW

715MW Datasheets Context Search

BAP51-02

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MSM5117800

24-Pin Plastic DIP

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NTE15023

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TPS799xxYZU

TDC1048J

6550B

TC5117800bnt-60

TC514265DJ

tc5118180

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mb8117400