ka7309
Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE
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KS7214
KS7214
48-QFP-0707
37T37
71b4142
48-QFP-0707
ka7309
TI 81W
CAMERA 803 CMOS
sync timing generator
T3D 77
78235
T3D 91
oil temperature sensor generator
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16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
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gd243
Abstract: No abstract text available
Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000TS/RS
250us
gd243
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Z812
Abstract: No abstract text available
Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)
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KM6164002/L
KM6164002-20
250mA
KM6164002-25
240mA
KM6164002-35
220mA
KM684002J/U
44-SOJ-400
Z812
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Untitled
Abstract: No abstract text available
Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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KM44V16000AS
16Mx4
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns
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KM416C256A/AL/ALL
256Kx
110ns
KM416C256A/AÃ
130ns
KM416C256A/AL/ALL-8
150ns
KM416C256A/AUALL-6
40-LEAD
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Untitled
Abstract: No abstract text available
Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
110ns
KM416C1204A-7/A-L7/A-F7
130ns
KM416C1204A-8/A-L8/A-F8
150ns
cycle/16m
cycle/128msCLE
71b4142
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KM418C256/L/SL-7
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its
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KM418C256/L/SL
KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/L/SL-10
130ns
150ns
100ns
180ns
KM418C256/L/SL-7
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL-5 50ns 13ns 90ns KM41C4000C/CL/CSL-6 60ns 15ns 110ns KM41C4000C/CL/CSL-7 70ns 20ns 130ns KM41C4000C/CL7CSL-8
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KM41C4000C/CL/CSL
KM41C4000C/CL/CSL-5
KM41C4000C/CL/CSL-6
110ns
KM41C4000C/CL/CSL-7
130ns
KM41C4000C/CL7CSL-8
150ns
KM41C4000C/CL/CSL
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Untitled
Abstract: No abstract text available
Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1000DJ
16Mx4,
512Kx8)
GD3474Ã
7Tb4142
GG3474T
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Untitled
Abstract: No abstract text available
Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary
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ib4142
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Untitled
Abstract: No abstract text available
Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1004DT
1b4142
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Untitled
Abstract: No abstract text available
Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS
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KM4132G271
32Bit
KM4132G271
D21L11
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KM23V4100C
Abstract: KM-23V4100CG
Text: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)
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KM23V4100C
8/256K
150ns
120ns
KM23V4100C
40-DIP-600
KM23V4100CG
-SOP-525
KM23V4100CT
44-TSOP2-400
KM-23V4100CG
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030b4T
Abstract: C1204B
Text: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BJ
16Bit
1Mx16
7Rb4142
03Qb5
030b4T
C1204B
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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Untitled
Abstract: No abstract text available
Text: KA34063A LINEAR INTEGRATED CIRCUIT DC TO DC CONVERTER CONTROLLER The KA34063A is a monolithic requlator subsystem intended for use as DC to DC converter. This device contains a temperature compen sated bandgap reference, a duty-cycle control oscillator, driver and
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KA34063A
KA34063A
100Hz
100KHz
001/iF
71b414E
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KM41C16000BK
Abstract: No abstract text available
Text: K M 4 1 C 16 0 0 0 B K CMOS DRAM ELECTRONICS 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16Mx1
KM41C16000BK
KM41C16000BK
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Untitled
Abstract: No abstract text available
Text: K M 4 4 V 16104AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,
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16104AS
16Mx4
KM44V16104AS
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RAS 1210 SUN HOLD
Abstract: sun hold RAS 1220 sun hold ras 1210
Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns
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KM416V1204A/A-L/A-F
KM416V1204A-6/A-L6/A-F6
110ns
KM416V1204A-7/A-L7/A-F7
130ns
KM416V1204A-8/A-L8/A-F8
150ns
42-LEAD
44-LEAD
RAS 1210 SUN HOLD
sun hold RAS 1220
sun hold ras 1210
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Untitled
Abstract: No abstract text available
Text: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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KM44C4005BS
16Mx4,
512Kx8)
71b414E
003455b
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Untitled
Abstract: No abstract text available
Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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6000B
16Mx1
KM41C16000BS
0G34Q05
71b4142
0034QGfc>
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ifr 350 mosfet
Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
Text: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)
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IRL620A
O-220
003T14ti
30-OTO
T0-220
QQ3b32fl
500MIN
7Tb414E
DD3b33D
ifr 350 mosfet
IRF 2505
003T1
IRL620A
ifr mosfet
ifr 150 mosfet
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KM48V2100B
Abstract: 2100BK
Text: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM48V2100BK
16Mx4,
512Kx8)
2100BK
71L4142
KM48V2100B
2100BK
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