KS0065 332
Abstract: a 4504 KS0068 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The KS0068 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology 100 QFP FUNCTION • Character type dot m atrix LCD driver & controller • Internal driver: 16 common and 60 segment signal output.
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KS0068
KS0068
32kinds
KS0068-00;
KS0068-00
D02D721
KS0068-00)
71bm4B
0Q2Q722
KS0065 332
a 4504
20405 lcd display
M37D
4053 IC circuit diagram
Digital Pulse Counter Two Digit
fcd 5250
IC CHIP 5270
ks0065
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KM428C257
Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual
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KM428C257
256KX
512x8
110ns
130ns
150ns
110mA
100mA
40-PIN
40/44-PIN
KM428C257
XAL W6
MAS 10 RCD
sc 4145
CNR 14 V 471 K
CA278
CI008
On Screen Display Samsung
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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KMM5321000BV-7
Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns
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KMM5321000BV/BVG
1Mx32
KMM5321000BV-6
KMM5321000BV-7
110ns
130ns
150ns
KMM5321000BV-8
cycles/16ms
KMM5321000BV
1Mx4 dram simm
caso
Samsung Capacitor
DO30
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SSH60N10
Abstract: 21133 250M SSH60N08
Text: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSH60N10/08
SSH60N10
SSH60N08
21133
250M
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Untitled
Abstract: No abstract text available
Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér
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KM44C
KM44C1003DJ
G03416B
00341f
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Untitled
Abstract: No abstract text available
Text: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)
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KS7212
KS7212
KC73125
KC73129
06992MHz,
93750MHz
48-QFP-0707
GG37fl4M
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KM44C4000B
Abstract: No abstract text available
Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4000B
KM44C4000BS
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port
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KM428C64
KM428C64
130ns
150ns
180ns
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Untitled
Abstract: No abstract text available
Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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KM44V16000AS
16Mx4
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Untitled
Abstract: No abstract text available
Text: KA7522 ELECTR O NICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7522 is a electronic ballast controller for fluorescent inverter syst ems. It contains whole function in KA7521, current feed back and prehea ting time controlled by temperature sensing.
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KA7522
KA7522
KA7521,
KA7522D
12G471K
10D-11
KTD5-350
ib4142
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Untitled
Abstract: No abstract text available
Text: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V
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KA8513B
KA8S13B
50MHz
1200bps
KA8513BD
20-SS0P-225
455KHZ
10MAX
30-SS0P-375
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Untitled
Abstract: No abstract text available
Text: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor
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KA7577
KA7577
Prot05
16-OIP-300A
16-DIP-300B
D32fll2
20-SOP-300
20-SOP-375
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km62256alg
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C
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KM62256Ã
LPI/KM62256ALGI
62256ALPI;
28-pin
62256ALGI:
28-pln
km62256alg
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Untitled
Abstract: No abstract text available
Text: Advanced Power MOSFET S F W /I9 6 3 0 FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RüS on = 0 -8 ß ■ Lower Input Capacitance lD = -6 .5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VOS-2 0 0 V
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SFW/I9630
0D4Q11Q
ib4142
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Untitled
Abstract: No abstract text available
Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary
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ib4142
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8A1 op
Abstract: KM44S16030A
Text: KM44S16030A CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)
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KM44S16030A
KM44S16030A
10/AP
8A1 op
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KMM374S803AT-G2
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KM M374S803AT KMM374S803AT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S803AT is a 8M bit x 72 Synchronous - Performance range
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KMM374S803AT
M374S803AT
8Mx72
400mil
168-pin
KMM374S803AT-G8
KMM374S803AT-G0
KMM374S803AT-G2
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KS88C4204
Abstract: KS88C4208 samsung dmb 44-QFP-1010
Text: KS88C4204 ELECTRONICS M icrocontroller DESCRIPTION The KS88C4204 and KS88C4208 single-chip microcontrollers are fabricated using an advanced CMOS process. The only difference between the two devices is ROM size: the "4204" has a 4-Kbyte ROM and the "4208” has an
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88C4204
KS88C4204
KS88C4208
KS88C4204)
KS88C4208)
208-byte
10-MHz
KS88C4204
71b4142
samsung dmb
44-QFP-1010
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc
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7Tb414E
KM44C1012A
KM44C1012A-10
130ns
KM44C1012A-8
KM44C1012A-7
150ns
KM44C1012A
180ns
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns
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KM416C1200A/A-L/A-F
KM416C1200A-6/A-L6/A-F6
110ns
KM416C1200A-7/A-L7/A-F7
130ns
KM416C1200A-8/A-L8/A-F8
150ns
cycles/16ms
cycles/128ms
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Untitled
Abstract: No abstract text available
Text: UNIVERSAL SPEECH NETWORK KA8603 INTRODUCTION The KA8603 can fulfill the standards o f other countries by changing the external com ponent. D ynam ic or piezoelectric type can be used with receiver. Each gain is controlled with AG C in accordance with the line current. The KA8603 can be operated down to
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KA8603
KA8603
16-DIP-30c
20-SOP-300
20-SOP-375
ib4142
0Q3b232
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Untitled
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using
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7Tb41M2
001113b
512Kx8)
KM23C4Q00A
120ns
50jjA
32-pin
23C4000A)
23C4000AG)
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3171S
Abstract: No abstract text available
Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND
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KM29V16000ARS
KM29V16000ATS/RS
264-byte
250fjs
003172R
-TSOP2-400F
-TSOP2-400R
3171S
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