Contextual Info: Advanced Power MOSFET S F W /I9 6 3 0 FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RüS on = 0 -8 ß ■ Lower Input Capacitance lD = -6 .5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VOS-2 0 0 V