KM44C4000B
Abstract: No abstract text available
Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000B
KM44C4000BS
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000B,
KM44C4100B
KM44V4000B,
KM44V4100B
0D232bc
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000BK
16Mx4,
512Kx8)
7Tb4142
GG34404
7Tb4142
G344D5
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PDF
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cd-rom circuit diagram
Abstract: km44c4000bk KM44C4100B
Text: KM44C4000BK ELECTRONICS CMOS D R A M 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Pag 9 Mods offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000BK
b4142
cd-rom circuit diagram
km44c4000bk
KM44C4100B
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PDF
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KM44C4000BS
Abstract: KM44C4000BS 6 KM44C4000B
Text: KM44C4000BS ELECTRONICS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000B
consumpt47
KM44C4000BS
7Sb4145
003442b
KM44C4000BS
KM44C4000BS 6
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PDF
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KM44C4100B
Abstract: KM44V4000B
Text: KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4000B,
KM44C4100B
KM44V4000B,
KM44V4100B
KM44V4000B
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PDF
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KM44C4100BK
Abstract: No abstract text available
Text: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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16Mx4,
512Kx8)
KM44C4100BK
KM44C4100BK
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PDF
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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OCR Scan
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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PDF
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Oi24
Abstract: No abstract text available
Text: KM44V4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44V4000BK
16Mx4,
512Kx8)
Oi24
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PDF
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KM44V4100BS
Abstract: Oi24 A10QZ
Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44V4100BS
16Mx4,
512Kx8)
b414E
7Tb4142
KM44V4100BS
Oi24
A10QZ
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5364003BK/BKG DRAM MODULE_KMM5364103BK/BKG KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung KMM53640 1 03BK is a 4M bit x 36
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OCR Scan
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KMM5364003BK/BKG
KMM5364103BK/BKG
KMM5364103AK/AKG
4Mx36
300mil
KMM53640
24-pin
28-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44V4000BS
16Mx4,
512Kx8)
V4000B
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PDF
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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OCR Scan
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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PDF
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KM44C4100BS
Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4100BS
34STB
KM44C4100BS
BC3 csr
data sheet tsop 138
TSOP 173 g
KM44C4100B
N300N
3bm42
512Kx8 bit
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C400BK/BS KMM372C41OBK/BS DRAM MODULE KMM372C400BK/BS / KMM372C41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 OB is a 4M bit x 72 Dynamic RAM high density memory module. The
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OCR Scan
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KMM372C400BK/BS
KMM372C41OBK/BS
KMM372C400BK/BS
KMM372C41
4Mx72
KMM372C40
300mil
48pin
168-pin
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PDF
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A1KA
Abstract: KMM5364103BK
Text: KMM5364003BK/BKG KMM5364103BK/BKG DRAM MODULE KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53640 1 03BK is a 4M bit x 36 • Part Identification
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OCR Scan
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KMM5364003BK/BKG
KMM5364103BK/BKG
KMM5364003BK/BKG
KMM5364103AK/AKG
4Mx36
300mil
24-pin
28-pin
72-pin
KMM53640
A1KA
KMM5364103BK
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PDF
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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OCR Scan
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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PDF
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km416c254
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#
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OCR Scan
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KM416C256B#
KM416C256BL#
KM416C254S#
KM416C254BL#
KM416V256B#
KM416V25SBL#
KM416V254B#
KM416V254BL#
256KX16
16Mx1
km416c254
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PDF
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KM44C4000BS 6
Abstract: 4Mx4 DRAM
Text: KMM372C400BK/BS KMM372C41OBK/BS DRAM MODULE KMM372C400BK/BS / KMM372C41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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OCR Scan
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KMM372C400BK/BS
KMM372C41OBK/BS
KMM372C41
4Mx72
KMM372C40
300mil
48pin
168-pin
KM44C4000BS 6
4Mx4 DRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: KM M5324000B K/B KG KMM53241OOBK/BKG DRAM MODULE KMM5324000B K/B KG & KMM53241 OOBK/BKG Fast Page Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh, using 16M DRAM with 300 mil Package FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM53240 1 00BK is a 4M bit x 32
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OCR Scan
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M5324000B
KMM53241OOBK/BKG
KMM5324000B
KMM53241
4Mx32
KMM53240
KMM5324000BK
cycles/64ms
KMM5324000BKG
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PDF
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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OCR Scan
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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PDF
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KMM5368103B
Abstract: 53680 KMM5368103BKG 4Mx4 DRAM
Text: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG $ KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53680 1 03BK is a 8M bit x 36 D ynam ic RAM high
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OCR Scan
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KMM5368003BK/BKG
KMM5368103BK/BKG
KMM5368003BK/BKG
KMM5368103BK/BKG
8Mx36
300mil
24-pin
28-pin
72-pin
KMM53680
KMM5368103B
53680
KMM5368103BKG
4Mx4 DRAM
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PDF
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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OCR Scan
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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PDF
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KM44C4100BK
Abstract: cd-rom circuit diagram D0345 KM44C4100B
Text: KM44C4100BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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OCR Scan
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KM44C4100BK
512Kx8)
003457b
KM44C4100BK
cd-rom circuit diagram
D0345
KM44C4100B
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PDF
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