Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416C254 Search Results

    SF Impression Pixel

    KM416C254 Price and Stock

    Samsung Semiconductor KM416C254DT-4

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C254DT-4 1,044 2
    • 1 -
    • 10 $2.912
    • 100 $2.0908
    • 1000 $1.8368
    • 10000 $1.8368
    		Buy Now

    Samsung Semiconductor KM416C254BT-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C254BT-6 926
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components KM416C254BT-6 2,390
    • 1 $1.375
    • 10 $1.375
    • 100 $1.375
    • 1000 $0.6325
    • 10000 $0.5775
    		Buy Now
    KM416C254BT-6 2,390
    • 1 $1.375
    • 10 $1.375
    • 100 $1.375
    • 1000 $0.6325
    • 10000 $0.5775
    		Buy Now
    KM416C254BT-6 740
    • 1 $2.2
    • 10 $2.2
    • 100 $2.2
    • 1000 $0.9075
    • 10000 $0.9075
    		Buy Now
    KM416C254BT-6 740
    • 1 $2.2
    • 10 $2.2
    • 100 $2.2
    • 1000 $0.9075
    • 10000 $0.9075
    		Buy Now

    SEC KM416C254DJ-5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C254DJ-5 284
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416C254DJ-5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C254DJ-5 174 1
    • 1 $8.96
    • 10 $4.48
    • 100 $3.8824
    • 1000 $3.6736
    • 10000 $3.6736
    		Buy Now
    Quest Components KM416C254DJ-5 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    KM416C254DJ-5 80
    • 1 $12
    • 10 $6
    • 100 $5.6
    • 1000 $5.6
    • 10000 $5.6
    		Buy Now

    Samsung Semiconductor KM416C254BJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C254BJ-6 77
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components KM416C254BJ-6 1
    • 1 $6.825
    • 10 $6.825
    • 100 $6.825
    • 1000 $6.825
    • 10000 $6.825
    		Buy Now
    Find more KM416C254 price and stock on Findchips.com

    KM416C254 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C254D Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-4 Samsung Electronics High Speed 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-L-4 Samsung Electronics High Speed 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Original PDF
    KM416C254DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Original PDF
    KM416C254DJ-L-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DJL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Original PDF
    KM416C254DT-4 Samsung Electronics High Speed 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DT-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DT-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DT-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DT-L-4 Samsung Electronics High Speed 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DT-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C254DTL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Original PDF
    KM416C254DT-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM416C254 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    km416c254b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254B, KM416V254B 256Kx 256Kx16 00E02M3 km416c254b PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)


    OCR Scan     		KM416C254D 16Bit 256Kx16 DD371Ã PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF

    C254D

    Abstract: e5a5
    Text: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)


    OCR Scan     		KM416C254D 16Bit 256Kx16 C254D e5a5 PDF

    e5as

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		KM416C254D, KM416V254D 16Bit 256Kx16 e5as PDF

    km416c254b

    Abstract: No abstract text available
    Text: KM416C254B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC KM416C254B/BL7BLL-5 50ns 17ns 90ns 20ns KM416C254B/BL7BLL-6 60ns 17ns 110ns 24ns KM416C254B/BL/BLL-7 70ns


    OCR Scan     		KM416C254B/BL/BLL KM416C254B/BL7BLL-5 KM416C254B/BL7BLL-6 110ns KM416C254B/BL/BLL-7 130ns cycle/64ms 00n02T km416c254b PDF

    1dq10

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254B, KM416V254B 256Kx16 0D23223 1dq10 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		KM416C254D, KM416V254D 16Bit 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C254BJ 1/2 IL08 * C-MOS 4M(256K x 16)-BIT DYNAMIC RAM WITH EXTENDED DATA OUT - TOP VIEW - 1 V DD (+5V) GND 40 DQ1 2 39 DQ16 DQ2 3 38 DQ15 DQ3 4 37 DQ14 DQ4 5 36 DQ13 V DD 6 (+5V) 34 DQ12 DQ6 8 33 DQ11 DQ7 9 32 DQ10 DQ8 10 31 DQ9 12 N.C W 13


    Original     		KM416C254BJ DQ0-DQ16 DQ9-DQ16 PDF

    RA5E

    Abstract: 100 CJB equivalent D0232
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254D, KM416V254D 256Kx16 RA5E 100 CJB equivalent D0232 PDF

    C254D

    Abstract: KM416C254D
    Text: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)


    Original     		KM416C254D 16Bit 256Kx16 aC254D 400mil C254D KM416C254D PDF

    ee1625

    Abstract: C254D 3D47T
    Text: KM416C254DT ELECTRONICS CMOS DRAM 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254DT 256Kx 256Kx16 003040b ee1625 C254D 3D47T PDF

    km416c254

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#


    OCR Scan     		KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# 256KX16 16Mx1 km416c254 PDF

    C254D

    Abstract: KM416C254D KM416V254D km416v254 KM416C254
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		KM416C254D, KM416V254D 16Bit 256Kx16 higV254D 400mil C254D KM416C254D KM416V254D km416v254 KM416C254 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 2 5 6 K x 16 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254B, KM416V254B 256Kx16 71b4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254B, KM416V254B 256Kx16 PDF

    C254D

    Abstract: KM416C
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .


    OCR Scan     		KM416C254D, KM416V254D 256Kx16 DQODQ15 C254D KM416C PDF

    KM416C254BJ

    Abstract: km416c254b 416c254
    Text: CMOS DRAM KM416C254B/BL/BLL 256K x 76 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION The S a m s u n g K M 4 1 6 C 2 5 4 B /B L /B L L is a C M O S high • Performance range: s p e e d 2 6 2 ,1 4 4 b i t x 1 6 tR A C tC A C tR C


    OCR Scan     		KM416C254B/BL/BLL 40-LEAD KM416C254BJ km416c254b 416c254 PDF

    C254D

    Abstract: KM416C254D
    Text: KM416C254D/DL, KM416V254D/DL CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		KM416C254D/DL, KM416V254D/DL 16Bit 256Kx16 400mil C254D KM416C254D PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416V254DJ 256Kx16 DQ0-DQ15 rbbb PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    OCR Scan     		KM416C256D, KM416V256D 16Bit 256Kx16 0G372DS PDF

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 PDF

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL PDF