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    1DQ10 Search Results

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    1DQ10 Price and Stock

    SMC Diode Solutions 11DQ10

    DIODE SCHOTTKY 100V 1.1A DO41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 11DQ10 Reel 25,000 5,000
    • 1 -
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    • 10000 $0.03672
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    SMC Diode Solutions 31DQ10

    DIODE SCHOTTKY 100V 3.3A DO201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 31DQ10 Ammo Pack 2,500 1,250
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    • 10000 $0.09459
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    Nexperia 74LVC11D-Q100J

    IC GATE AND 3CH 3-INP 14SO
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    DigiKey 74LVC11D-Q100J Digi-Reel 2,465 1
    • 1 $0.35
    • 10 $0.242
    • 100 $0.1856
    • 1000 $0.15594
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    74LVC11D-Q100J Cut Tape 2,465 1
    • 1 $0.35
    • 10 $0.242
    • 100 $0.1856
    • 1000 $0.15594
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    Avnet Americas 74LVC11D-Q100J Reel 8 Weeks 7,500
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    Mouser Electronics 74LVC11D-Q100J 2,219
    • 1 $0.4
    • 10 $0.237
    • 100 $0.183
    • 1000 $0.164
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    Rochester Electronics 74LVC11D-Q100J 37,500 1
    • 1 $0.1113
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    • 100 $0.1046
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    Avnet Silica 74LVC11D-Q100J 10 Weeks 2,500
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    EBV Elektronik 74LVC11D-Q100J 10 Weeks 2,500
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    Nexperia 74HCT11D-Q100J

    IC GATE AND 3CH 3-INP 14SO
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    DigiKey 74HCT11D-Q100J Digi-Reel 2,117 1
    • 1 $0.39
    • 10 $0.273
    • 100 $0.2101
    • 1000 $0.17716
    • 10000 $0.17716
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    74HCT11D-Q100J Cut Tape 2,117 1
    • 1 $0.39
    • 10 $0.273
    • 100 $0.2101
    • 1000 $0.17716
    • 10000 $0.17716
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    Avnet Americas 74HCT11D-Q100J Reel 8 Weeks 7,500
    • 1 -
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    • 1000 -
    • 10000 $0.1386
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    Mouser Electronics 74HCT11D-Q100J 1,990
    • 1 $0.45
    • 10 $0.267
    • 100 $0.207
    • 1000 $0.176
    • 10000 $0.131
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    Rochester Electronics 74HCT11D-Q100J 2,230 1
    • 1 $0.1269
    • 10 $0.1269
    • 100 $0.1193
    • 1000 $0.1079
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    Avnet Asia 74HCT11D-Q100J 8 Weeks 7,500
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    • 10000 $0.18987
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    Avnet Silica 74HCT11D-Q100J 10 Weeks 2,500
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    EBV Elektronik 74HCT11D-Q100J 10 Weeks 2,500
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    Nexperia 74HCT7541D-Q100J

    IC BUFFER NON-INVERT 5.5V 20SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HCT7541D-Q100J Digi-Reel 1,991 1
    • 1 $1.94
    • 10 $1.432
    • 100 $1.1636
    • 1000 $1.02275
    • 10000 $1.02275
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    74HCT7541D-Q100J Cut Tape 1,991 1
    • 1 $1.94
    • 10 $1.432
    • 100 $1.1636
    • 1000 $1.02275
    • 10000 $1.02275
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    Avnet Americas 74HCT7541D-Q100J Reel 8 Weeks 2,000
    • 1 -
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    • 10000 $1.01033
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    Rochester Electronics 74HCT7541D-Q100J 4,000 1
    • 1 $0.8894
    • 10 $0.8894
    • 100 $0.836
    • 1000 $0.756
    • 10000 $0.756
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    TTI 74HCT7541D-Q100J Reel 2,000
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    • 1000 -
    • 10000 $0.89
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    Find more 1DQ10 price and stock on Findchips.com

    1DQ10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U4B R950

    Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
    Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009

    Untitled

    Abstract: No abstract text available
    Text: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. M T28F4°0B1 FLASH MEMORY S m artV o ltag e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Four m ain m em ory blocks


    OCR Scan     		PDF 110ns 44-PiLASH 48-PIN

    1DQ10

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 11DQ09 1DQ10 1.1A/90— 100V FEATU R E S °Miniature Size ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available


    OCR Scan     		PDF A/90-- 11DQ09 11DQ10 1IDQ09 1DQ10 10x10mm

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


    OCR Scan     		PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800

    1dq10

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx16 0D23223 1dq10

    Untitled

    Abstract: No abstract text available
    Text: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):


    OCR Scan     		PDF T28F800B5) 44-PIN

    KM416S4030AT

    Abstract: ZX-03 KM416S4030AT-G
    Text: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM416S4030AT 16Bitx KM416S4030A/KM416S4031A KM416S4030AT) KM416S4030AT ZX-03 KM416S4030AT-G

    M29F100

    Abstract: M29F100B M29F100T
    Text: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME


    OCR Scan     		PDF M29F100T M29F100B x8/x16, M29F100 M29F100B

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


    OCR Scan     		PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F016XD 16-MBIT 1 MBIT X 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAc) — Supports both Standard and FastPage-Mode Accesses 56-Lead TSOP Type I Package Multiplexed Address Bus — RAS# and CAS# Control Inputs 2 ix A Typical Deep Power-Down


    OCR Scan     		PDF 28F016XD 16-MBIT 56-Lead 64-Kbyte 28F008SA

    Untitled

    Abstract: No abstract text available
    Text: FLASHMEMORY CMOS MBM29F4ÖÖTÄ#o/Äi 2/MBM29F400 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as EzPROMs • Compatible with JEDEC-standard world-wide pinouts


    OCR Scan     		PDF MBM29F4Ö 2/MBM29F400 48-pin 44-pin F9706

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5416262 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.


    OCR Scan     		PDF MSM5416262 144-Word 16-Bit MSM5416262 512-word

    S772

    Abstract: tms44165
    Text: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166C - AUGUST 1992 - REVISED JUNE 1995 DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS44165/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-92.


    OCR Scan     		PDF TMS44165, TMS44165P 262144-WORD 16-BIT SMHS166C TMS44165/Ps 1DQ14 S772 tms44165

    27r1

    Abstract: 0841B
    Text: Semiconductor General Description The ADC0841 is a CMOS 8-bit successive approximation A/D converter. Differential inputs provide low frequency input common mode rejection and allow offsetting the analog range of the converter. In addition, the reference input can


    OCR Scan     		PDF ADC0841 ADC0841 27r1 0841B

    KM416S1120AT

    Abstract: KM416S1120A KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12
    Text: KM416S1120AT SDRAM ELECTRONICS 512 K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • The KM416S1120A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance


    OCR Scan     		PDF KM416S1120AT 16Bit KM416S1120A b414S 033G3D D03b2b2 KM416S1120AT KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12

    C254D

    Abstract: KM416C
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .


    OCR Scan     		PDF KM416C254D, KM416V254D 256Kx16 DQODQ15 C254D KM416C

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5416283 2 6 2 ,1 4 4 -W o rd x 1 6 -B it M u ltip o rt D R A M DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and


    OCR Scan     		PDF MSM5416283 MSM5416283 144-word 16-bit 512-word